VC 150 INVERTER Search Results

Diode LT 404

Contextual Info: s e M IK R D n SKiiP 312 GDL 120 - 404 WT E/U Absolute Maximum Ratings Symbol | Conditions Values Units 1200 - 5 5 . . . + 150 V V A A °C 3 0 0 0 5) V 240 A A A kA2s 11 IGBT & Invcsrse Diode Vces Operating DC link voltage Vc c 10) Theatsink — 2 5 °C

GD74F04

Contextual Info: GD74F04 PRELIMINARY DATA SHEET HEX INVERTER Description The GD74F04 contains 6 logic inverters which accept standard TTL input signal and standard TTL output level. They have a greater noise margin than conventional inverters. Pin Configuration Vcc 6Y 6A 5Y

74F14

Contextual Info: Signetics FAST 74F14 Schmitt Trigger Hex Inverter Schmitt Trigger Product Specification FAST Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL 5.0 ns 74F14 18 mA DESCRIPTION The 74F14 contains six logic inverters which accept standard TTL input signals and provide

Contextual Info: GD74F04 PRELIMINARY DATA SHEET HEX INVERTER Description Pin Configuration The GD74F04 contains 6 logic inverters which accept standard TTL input signal and standard TTL output level. They have a greater noise margin than conventional inverters. Vcc 6Y 6A 5Y

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —

Contextual Info: m N E R B PM150CSA060 C In tB fflfT lO C l M o d u lG Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three Phase IGBT Inverter Output 150 Amperes/600 Volts - Y (4 TYP.) 1. V upc 2. UFo 3. U r 4. V upi 5. V vpc 6. VFo

7Z04

Abstract: SOT70 Package sot70 NC7SZ04M5
Contextual Info: NC7SZ04 F A I R C H I L D SEM ICONDUCTOR TM NC7SZ04 TinyLogic UHS Inverter General Description Features The NC7SZ04 is a single inverter from Fairchild's Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced CMOS technology to achieve ultra high

Contextual Info: Í K M E R E PM150RSA060 X Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 lilt & llif n O d M o d u lB Three Phase + Brake IGBT Inverter Output 150 Amperes/600 Volts 1. V u pc 1 1 .W p 2. UFo 1 2 .V W P I 3. U p 4 . V upi

GDIP1-T14

Abstract: 54F04 GDFP1-F14
Contextual Info: Product specification Philips Semiconductors Military FAST Products Hex inverter 54F04 PIN CONFIGURATION ORDERING INFORMATION ORDER CODE DESCRIPTION PACKAGE DESIGNATOR* 14-Pin Ceramic DIP 54F04/BCA GDIP1-T14 14-Pin Ceramic Flat Pack 54F04/BDA GDFP1-F14 a 20-Pin Ceramic LLCC

562 sot23

Abstract: Transistor Bo 47
Contextual Info: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Hybrid Power Module M H P M 7A 15S120D C 3 Integrated Power Stage for 3.0 hp 460 VAC Motor Drive Motorola Preferred Device This VersaPower module integrates a 3-phase inverter, 3-phase rectifier, brake, and temperature sense in a single

GRM1552C1H

Abstract: MURATA GRM1552C1H MCR01MZSJ TG2211AFT MCR01MZS grm1552c gaas spdt switch
Contextual Info: TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter

MCR01MZSJ

Abstract: GRM1552C1H MCR01MZS MURATA GRM1552C1H MURATA GRM1552C1H CAPACITOR TG2211AFT grm1552c
Contextual Info: TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter

154j capacitor

Abstract: D406 DM74ALS DM74ALS14 DM74ALS14M DM74ALS14N DM74ALS14SJ M14A M14D N14A
Contextual Info: EM ICDNDUCTOR t DM74ALS14 Hex Inverter with Schmitt Trigger Inputs General Description High input noise im m unity S w itching specification at 50 pF This device contains six independent gates, each o f which perform s the logic IN VER T function. Each input has hyster­

2n5039

Abstract: 2n5038 2N5038 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Itransistors "Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, w ide-band amplifiers and power oscillators in

54LS04

Abstract: 54LS04/BCAJC
Contextual Info: MOTOROLA M ilitary 5 4 L S 0 4 H ex-Input Inverter G a te MP0 ELECTRICALLY TESTED PER: MIL-M-38510/30003 mini LOGIC DIAGRAM Vcc A6 Y6 A5 Y5 A4 V4 AVAILABLE AS: 1 JAN: JM38510/30003BXA 2) SMD: N/A 3)883: 54LS04/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C

Contextual Info: S E M IC O N D U C T O R tm DM74AS34 Hex Non-Inverter General Description • Switching specifications guaranteed over full temperature and Vc c range ■ Advanced oxide-isolated, ion-implanted SchottkyTTL process These devices contain six independent gates, each of which

Contextual Info: A I R C H I L D Revised March 1999 S E M IC D N D U C T O R tm NC7SZ04 TinyLogic UHS Inverter General Description Features • S pace saving S O T23 or SC70 5-lead package High Speed Series of TinyLogic™. T h e device is fabricated w ith advanced C M OS technology to achieve ultra high

7S04

Contextual Info: S E M IC O N D U C T O R tm NC7S04 TinyLogic HS Inverter General Description Features The NC7S04 is a single high performance CMOS Inverter. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range. ESD protection diodes inherently guard both input

MURATA GRM1552C1H

Abstract: MURATA GRM1552C1H CAPACITOR
Contextual Info: TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter

Contextual Info: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4901 Unit in mm SW ITC H IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • Including Two Devices in US6 Ultra Super Mini Type with 6 leads With Built-in Bias Resistors

Contextual Info: PM75RSA060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In t & llif T lO d M O Ö U lB Three Phase + Brake IGBT Inverter Output 75 Amperes/600 Volts 1. Vupc 11.Wp 2. UFo 12. Vwpi 3. Up 13.VNC H . V ni 4. Vupi 5. Vvpc 15. Br

Contextual Info: RN4905 RN4905 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

BCR198

Abstract: KTY 120
Contextual Info: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C