VCC10V Search Results

Contextual Info: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.

ba6154

Abstract: VU level meters BA6137 vu meter
Contextual Info: Audio ICs LED level meter driver, 5-point, VU scale BA6154 The IC displays the input level range : — 10dB to +6dB on a 5-point, bar-type LED display. The BA6137 includes a rectifier am plifier allowing direct AC input, and has constant-current outputs, so it can direct­

Contextual Info: r i7 S G S -T H O M S O N TEA6415C BUS-CONTROLLED VIDEO MATRIX SWITCH PRELIMINARY DATA • 20MHz BANDWIDTH • CASCADABLE WITH ANOTHER TEA6415C INTERNAL ADDRESS CAN BE CHANGED BY PIN 7 VOLTAGE » 8 INPUTS (CVBS, RGB, MAC, CHROMA,.) ■ 6 OUTPUTS ■ POSSIBILITY OF MAC OR CHROMA SIGNAL

shock Sensor

Abstract: TA8563FN
Contextual Info: TOSHIBA TA8563FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8563FN SHOCK SENSOR IC 1ch VERSION TA8563FN detects an existence of external shock through the shock sensor and outputs. FEATURE • TA8563FN operates from 5VDC single power supply

TLS2271

Abstract: 32H6742 schematic diagram of seagate hard disk pcb tls2270 TLS2247 TLS2251 TLS2245 1575R SP4107A 32H6910
Contextual Info: TABLE OF CONTENTS How to use the Data CD-ROM Texas Instruments Storage Products Overview Alpha/Numeric Index 2000 Short Form Catalog Discontinued Parts List DSP and ASIC Quality and Technology HDD Read/Write Amplifiers MR Head Read/Write Thin-Film Head Read/Write

tda 1113

Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E33/733/E34 Z86E43/743/E44 CMOS Z8 OTP M ic r o c o n t r o l l e r s FEATURES • Auto Power-On Reset POR ■ Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable Permanently Enabled WDT

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

Contextual Info: P r e l im in a r y C u s t o m e r P r o c u r e m e n t S p e c if ic a t io n Z86C30/C31 /C32/C40 C M O S Z8 C o n s u m e r Contro ller Pr o c e sso r FEA T U R ES Part ROM K B RAM* (Byte) Speed (MHz) 4 2 2 4 237 125 237 236 16 12 12 16 Z86C30 Z86C31

KTN2369AU

Abstract: KTN2369U
Contextual Info: KEC KOflEA ELECTRONICS CO.LTD. SEMICONDUCTOR TECHNICAL DATA KTN2369U/AU EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCe=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.

photo transistor til 78

Abstract: SOC 291 MTD6060 MTE1040 QDQG403 0118 transistor
Contextual Info: MARKTECH INTERNATIONAL 1ÔE D • STTÌbSS QQOOMQS PHOTO TRANSISTOR -^ q,u MTD6060 0 — SILICON NPN EPITAXIAL PLANAR > - c L * T rM . SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR 1 t -J- Ii i f= M N APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READERS • PO SITIO N SEN S O R

MAX690_CSA

Abstract: Ax805
Contextual Info: 19-0243: Rev 1:9/94 y k iy jx iy i/ i 3.0V/3.3V M ic ro p r o c e s s o r Supervisory Circuits These devices are designed for use in systems powered by 3.0V or 3.3V supplies. See the selector guide in the back of this data sheet for sim ilar devices designed for

EN3871

Abstract: 2SC4727
Contextual Info: O rdering n u m b er:E N 3 8 7 1 2SC4727 No.3871 SAÜYD NPN E pitaxial P lanar Silicon Transistor 20V/8A Switching Applications F e a tu re s • Adoption of MBIT process. • Low saturation voltage. • F ast switching speed. •Large current capacity. • It is possible to make appliances more compact because its height on board is 9.5mm.

NICD charger 18V

Contextual Info: u i LT1510 m TECHNOLOGY Constant-Voltage/ Constant-Current Battery Charger F C f lT U R C S • Charges NiCd, NiMH and Lithium-Ion Batteries — Only One V 1 0 W Resistor Is Needed to Program Charging Current ■ High Efficiency Current Mode PWM with 1.5A

ecu sim 323

Contextual Info: AY-5-3600^ / Keyboard Encoder FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ One integrated c irc u it required fo r co m ple te keyboard assem bly N key ro llo ver or lock o ut operation Quad m ode operation L ock o u t/ro llo ve r selection under external co n tro l option)

Contextual Info: MITSUBISHI ICs AV COMMON M 66314FP 16-BIT LED DRIVER W ITH S H IFT REGISTER AND LATCH DESCRIPTION The M66314FP is an integrated circuit consisting of an LED PIN CONFIGURATION (TOP VIEW) array driver with 16-bit serial-in parallel-out shift register and output latch. Use of the C M O S process allows the

MA2820

Abstract: ghost 3007B DIP-18 LB1241
Contextual Info: Ordering number : EN1173E Monolithic Digital IC LB1241 Fluorescent Display Tube Driver Overview The LB1241 has been designed for interfacing low-level digital devices to fluorescent display tubes. Its 8-circuit independent Darlington output stage is used for digit and segment drivers. Equivalent pull-down resistors are built

2SC3358

Abstract: 2SC335
Contextual Info: UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES ‘L o * N:ise and H g n Gan * H ÿ i Power Gain T O -S3 1 C O -LEC T O R 2:EMITTER 3:B A S E 4 EMITTER A B S O LU TE M AXIM U M R A T ir G S .:ta- 2S*C. uriess otrervitse s p ^ r^ d

TRANSISTOR 1f

Abstract: 1F transistor 1F t transistor 1fTRANSISTOR
Contextual Info: TD62M3701F TENTATIVE oLOW SATURATION VOLTAGE DRIVER FOR MOTOR Unit in mm 8.2 ± 0.2 TD62M3701F is Multi Chip IC incorporates R R R H H B R H 6 low saturation discrete transistors which equipped bias resistor and free-wheeling diode. This IC is suitable for a battery use motor

itx power supply schematic

Abstract: QCX0002 MDP0009 squib driver DH0006H EDH0006CH EDH0006H MIL-I-45208A DH0006 qa test plan QCX0002
Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features • Single Supply Operation: +10V to +45 V • Low Standby Power Dissipation: 35 mW • 1.5 A, 50m s, Pulse Current Capability • Direct Replacement for DH0006H Applications • • • • Lamp drivers

EN4473

Abstract: 2SC5070 4473 transistor 4473-3
Contextual Info: O r d e r in g n u m b e r : E N 4 4 7 3 N°-4473 II_ 2SC5070 N PN E pitaxial P lan ar Silicon T ransistor SAMYOi Low-Frequency General-Purpose Amp, Driver Applications F e a tu re s •High C urrent Capacity. ■Adoption of MBIT process. ■High DC current gain.

KTN2369A

Abstract: J 2N2369 KTN2369 2369A
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.

3007B

Abstract: DIP-18 LB1240 lb124
Contextual Info: Ordering number : EN843H Monolithic Digital IC LB1240 Fluorescent Display Tube Driver Overview The LB1240 has been designed for interfacing low-level digital devices to fluorescent display tubes. Its 8-circuit independent Darlington output stage is used for digit and segment drivers. Equivalent pull-down resistors are built in ;

ZTX853

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT223 PNP SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR FZT788B ISSUE 3 - OCTOBER 1995 FEATURES * * Low equivalent on-resistance; RCE iat 93m£2 at 3A Gain of 300 at lc«2 A m ps and Very low saturation voltage APPLICATIONS * Battery powered circuits