VD2B Search Results

S2083

Contextual Info: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V1 VD2a VD2a VD1a VG2a 1 15 GND GND GND RFIN RFOUT GND GND 5 11 10 6 Each device is 100% RF tested to ensure performance compliance. GND VD2b GND VD2b The MAAP-011027 is a 2-stage, 8 W saturated C-band power amplifier in a 5 mm 20 lead PQFN

Contextual Info: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V2 VG2a VD1a VD2a VD2a 18 17 16 1 15 GND GND 2 14 GND RFIN 3 13 RFOUT GND 4 12 GND GND 5 11 GND This power amplifier is ideally suited for Point-toPoint Radios and C-band radar applications. 6 7 8 9 10 VD2b

SA051

Abstract: HEMT Amplifier
Contextual Info: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

30SPA0553

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

P1015-BD

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

XP1006-BD

Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Contextual Info: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

44MPA0478

Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: RFPA1002 RFPA1002 9.8GHz to 13.5GHz High Linearity 9.8GHz TO 13.5GHz HIGH LINEARITY POWER AMPLIFIER Package: Ceramic QFN, 40-pin, 6mm x 6mm x 0.95mm 40 Features 39 38 37 36 Vd1 35 Vg2 34 33 Vd2a 32 31 1 30 2 GND 29 3 28 RFin  Frequency Range: 9.8GHz to

MAAP-010171

Abstract: radar amplifier s-band
Contextual Info: MAAP-010171 Amplifier, Power, 8 W 2.5 - 3.5 GHz Rev. V2 Functional Schematic Features •      Linear Gain: 27 dB Saturated Output Power: +39 dBm Pulsed 50 Ω Input / Output Match Lead-Free 5 mm 20-lead PQFN Package Halogen-Free “Green” Mold Compound

P1016

Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: MAAP-010171 Amplifier, Power, 8 W 2.5 - 3.5 GHz Rev. V2 Functional Schematic Features •      Linear Gain: 27 dB Saturated Output Power: +39 dBm Pulsed 50 Input / Output Match Lead-Free 5 mm 20-lead PQFN Package Halogen-Free “Green” Mold Compound

Contextual Info: TGC4703-FC 19 to 38 GHz Doubler Key Features • • • • • • • • Measured Performance Bias conditions: Vd = 3.5 V, Vg1 = -0.4 V, Vg2 = +0.2 V, • 16 Primary Applications 15 • • 14 13 11 10 Product Description 9 8 Input Freq: 19.25 GHz 7 6

P1028

Abstract: 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: XP1026-BD Power Amplifier 27.0-32.0 GHz Rev. V1 Features Chip Device Layout •     Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power

MD8IC970NR1

Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage

DIODE d1d

Abstract: diode d3d 25C5250 B23G diode D2B
Contextual Info: MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the

RX-4035LC

Contextual Info: Real time clock module Product Number Please contact us RX-4035SA: X1B000192xxxx00 RX-4035LC: X1B000202xxxx00 High-Stability Frequency with Built in Timestamp and Power Switching SPI-Bus REAL TIME CLOCK MODULE RX-4035SA/LC •Built-in 32.768 kHz crystal unit

ablestick

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

P1027-BD

Abstract: p1027 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1 ka-band transistor
Contextual Info: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing