VDG 13 RELAY Search Results

Contextual Info: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 0.160 (Typ.)

45ACZ

Contextual Info: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII 2S K2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 70S (Typ.)

sc sf 12A H3

Abstract: 2SJ438
Contextual Info: TO SHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2 S J 43 8 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 0 3 .2 ± 0 .2

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

wiring VDG 13 relay

Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

MOTOROLA SEMICONDUCTOR AN1542

Abstract: IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet AC INRUSH CURRENT LIMITER DSA0035015 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must

IGD 507 an

Abstract: MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must

Contextual Info: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance :|Y fs | = 1.2S (Typ.)

Contextual Info: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • « • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-5^ (Typ.)

Contextual Info: T O SH IB A 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7t-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS U n it in mm 4V Gate Drive

2SK2963

Contextual Info: TO SH IBA 2SK2963 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOSV Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : RdS (ON) - 0.5 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 1.2 S (Typ.)

diode 0416

Abstract: 0416 relay diode 04-16
Contextual Info: TO SHIBA TENTATIVE 2SK2986 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII 2SK2986 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10.3MAX. 1.32 5.0 •

SANKEN power supply

Abstract: SI-5201 Relay 5V, 10A, sanken sanken power transistor SANKEN SI B105 CF35 relay 5v 5a, 5 pin relay 5v 30a
Contextual Info: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in

Contextual Info: TO SHIBA 2SK2987 T O SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL M O S TYPE U -M O S H J <; K ? QR7 HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O T O R DRIVE APPLICATIONS • Low Drain-Source ON Resistance

Contextual Info: TP0102 ^ Supertax; inc- TP0104 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ ^ D S O N V<3S(th) ' d (ON ) b v dgs (max) (max) (min) -20V 4.0£2 -2.4V -40V 4.0ÌÌ -2.4V Order Number / Package

wiring VDG 13 relay

Abstract: transistor tip 62 1ST22 R/IC+ax+33121
Contextual Info: MOTOROLA • SEMICONDUCTOR MC33121 TECHNICAL DATA Low Voltage Subscriber Loop Interface Circuit The MC33121 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface functions include battery feed, proper loop termination AC impedance,

4w-2w hybrid

Abstract: C10535E uPD7073 upd9903gt RFT Semiconductors P48GT-65-375B-1 PC9903
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD9903 µPD9903 ANALOG SUBSCRIBER LINE LSI DIGITAL CODEC The µPD9903 is a digital CODEC that can be used in analog subscriber circuits such as private branch exchangers (PBXs) and switching equipment for central offices. It features three of the functions required for analog subscriber

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC

wiring VDG 13 relay

Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
Contextual Info: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and

ixfk73n30

Abstract: IXFN73N30
Contextual Info: ÜIXYS VDSS HiPerFET Power MOSFETs IXFK73N30 IXFN 73N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 p DS on 300 V 73 A 45 mQ 300 V 73 A 45 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj =25°Cto150°C

Diode D25 N10 R

Abstract: Diode D25 N10 P
Contextual Info: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK

Contextual Info: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB

IRF452

Abstract: IRF450 IRF451 irf453
Contextual Info: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power