VDS1 Search Results

VDS1142

Abstract: Receiver Protectors S-band limiter limiter S-band tr limiter diode wg WR284 INTERNET RECEIVER tr Limiter S-band
Contextual Info: Receiver Protectors VDS1142 TR Limiter Features: • Frequency: 2.7 to 2.95 GHz · Overload Power: 150 kW peak · Normal Operating Power: 15 kW peak · Pulsewidth: 3.0 mSec max · Duty Cycle: .002 max · Insertion Loss: 0.4 dB max · VSWR: 1.4:1 max · Flat Leakage: 50 mW max

VDS1793

Abstract: Receiver Protectors WR-284 WR284 microwave receiver WR284 waveguide coupler
Contextual Info: Receiver Protectors VDS1793 Solid State Receiver Protector Features: Description: High power quasi-active receiver protector consisting of an active high power input stage followed by a passive limiter. In addition, there is a 20 dB directional coupler on the input. The unit is non-reflective.

B5B0

Abstract: ad 947 SSY0185-VDS12 SSY0185
Contextual Info: Application Note SPECTROTILTtm RS232/ 12 bit Communication Protoco, The SPECTROTILTtm RS232 12 bit Electronic Inclinometer p/nis SSY0185-VDS12 and SSY0185-HDS12 output is transmitted on a single wire in a RS232 format. The driver is a CMOS 0 to +5VDC. The output is high (+5VDC) when the i

VDS1124

Abstract: tr limiter tr Limiter S-band 50-kW
Contextual Info: Receiver Protectors VDS1124 TR Limiter Features: • Frequency: 2.7 to 2.9 GHz • Peak Power: - Normal Operating: 5 kW - Fault: 50 kW max • Duty Cycle: 0.10 max. • Pulsewidth: 100 µSec max. • Insertion Loss: 0.5 dB max • Flat Power: 50 mW max • Spike Power: 150 mW max

VDS1706

Abstract: spike protector S-BAND
Contextual Info: Receiver Protectors VDS1706 Receiver Protector Typical Performance: • • • • • • • Frequency Range: 2.7 – 2.9 GHz Power: 150 kW peak Duty Cycle: 0.01 max Pulsewidth: 10 µS max VSWR: 1.40:1 max Insertion Loss: 0.5 dB max Passive Leakage: - Flat Power: < 100 mW

VDS1546

Abstract: Receiver Protectors limiter s-band waveguide band Limiter S-band limiter step recovery diode tr Limiter S-band
Contextual Info: Receiver Protectors VDS1546 TR Limiter/ Attenuator Features: • · · · · · · · · · · Description: Passive, high power S-Band Pre-TR, TR Limiter with integral variable attenuator Frequency: 2.7 - 2.9 GHz Peak Power: 10 kW Duty Cycle: 0.11 Pulsewidth: 100 uSec

VDS1593

Abstract: Receiver Protectors tr limiter digital controlled attenuator
Contextual Info: Receiver Protectors VDS1593 TR Limiter Attenuator Features: Description: S-Band Pre-TR, TR Limiter with integral digitally controlled variable attenuation function. 150 Sohier Road Beverly, Massachusetts 01915 cp Beverly Microwave Division • Frequency: 2.7 to 3.0 GHz

VDS1140

Abstract: Receiver Protectors limiter s-band waveguide tr limiter tr Limiter S-band band Limiter S-band limiter Waveguide passive tr limiter
Contextual Info: Receiver Protectors VDS1140 TR Limiter/ Attenuator Features: Description: Passive, high power S-Band Pre-TR, TR Limiter with integral variable attenuator • Frequency: 2.7 - 3.0 GHz · Peak Power: - Normal Operating: 2 kW - Overload: 20 kW · Duty Cycle: 0.11

YTFP450

Abstract: SC651
Contextual Info: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :

YTFP250

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:

2SK1377

Abstract: 10R1B
Contextual Info: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:

DF2-A

Abstract: XB2H DF2E
Contextual Info: TL3M Device Triple Level 3 Mapper TXC-03453 DESCRIPTION • Maps up to three independent DS3/E3 line formats into SDH/SONET formats as follows: - DS3 to/from STM-1/TUG-3 - DS3 to/from STS-3/STS-1 - E3 to/from STM-1/TUG-3 • SDH/SONET bus access: - Byte wide drop and add buses

bts5030

Abstract: BTS5030-2EKA BTS5030-2E p8412 AEC-Q100-012
Contextual Info: PR OFET + 12V BTS5030-2EKA Smart High-Side Power Switch Dual Channel, 30mΩ Data Sheet Rev. 2.1, 2011-09-01 Automotive Power BTS5030-2EKA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

SDM-09060-B1F

Abstract: TRANSISTORS BJT with low gate voltage NOTE-AN054
Contextual Info: SDM-09060-B1F Y SDM-09060B1F(Y)Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features „ „ „ Available in RoHS Compliant

Contextual Info: SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 FS325-DS-12_EN Datasheet FS325 One Cell Lithium-ion/Polymer Battery Protection IC FS325 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: REV. 1.9 FS326-DS-19_EN Datasheet FS326 One Cell Lithium-ion/Polymer Battery Protection IC APR. 2007 FS326 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: REV. 1.0 FS356-DS-10_EN Datasheet FS356 One Cell Lithium-ion/Polymer Battery Protection IC JAN 2007 FS356 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: FS3332<Preliminary> 2 cell Lithium-ion/Polymer Battery Protection IC General Description Ordering Information The FS3332 Series are protection ICs for 2-serial-cell lithium-ion/lithium-polymer rechargeable batteries and include high-accuracy voltage detectors and delay

Contextual Info: FS326-DS-21_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.1 Datasheet FS326 One Cell Lithium-ion/Polymer Battery Protection IC FS326 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure

.dd2

Abstract: NJU7711 L2 SOT-23-5 NJU7710 SC88A DS1A
Contextual Info: NJU7710/11 2chボルテージディテクタ ボルテージディテクタ •概要 NJU7710/11はC-MOSプロセスを使用した超低消費電流の2 回路入り高精度電圧検出器です。 検出電圧精度は±1.0％、検出電圧は内部固定式で、1.3V~

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

VNS3NV04D

Abstract: OMNIFET
Contextual Info: VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS3NV04D RDS on 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN