VDS50V Search Results

d5030

Abstract: D5030UK 064R
Contextual Info: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53R31 0Q3034b bb7 « A P X Product Specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for

Contextual Info: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

4-07-7016

Contextual Info: S'iE » • HÛ55M52 0012330 221 « I N R IRLR120, IRLU120 INTERNATIONAL RECTIFIER IttER E le c t r i c a *d on Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time tr Rise Time . a? C h a r a c t e r i s t i c s <§> T j = 2 5 ° C ( u n l e s s o t h e r w i s e s p e c i f i e d )