VDSS 2000V Search Results

Contextual Info: Preliminary Technical Information IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C

Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000

T1N200

Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000

Contextual Info: Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTK5N250 IXTX5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTN5N250

Contextual Info: Preliminary Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C

IXTN5N250

Abstract: 5N250 S8560 88 881 505 Vdss 2000V
Contextual Info: Preliminary Technical Information IXTN5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTK5N250

Abstract: 5N25 IXTX5N250 Vdss 2000V PLUS247
Contextual Info: Advance Technical Information IXTK5N250 IXTX5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16KM-10 HIGH-SPEED SWITCHING USE FS16KM-10 • VDSS . 500V • ros ON (MAX) .0.56Q • I D .

mosfet 337

Abstract: Vdss 2000V
Contextual Info: MITSUBISHI Neh POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE FS4KM-12 • VDSS . 600V • TDS ON (MAX) . 2.6SÌ • ID . 4A

FS5KM-14A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 • VDSS . 700V .2.6Q

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KMH-06 HIGH-SPEED SWITCHING USE FS5KMH-06 • 2.5V DRIVE • VDSS . 60V • rDS ON (MAX) .0 . 15 Q

Contextual Info: MITSUBISHI Nch POWER MOSFET | FS10KM-2 | HIGH-SPEED SWITCHING USE FS10KM-2 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS . • TDS ON (MAX) .

fs50kmh-06

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50KMH-06 HIGH-SPEED SWITCHING USE FS50KMH-06 OUTLINE DRAWING Dimensions in mm • 2.5V DRIVE • VDSS . • rDS ON (MAX) .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KMH-3 HIGH-SPEED SWITCHING USE FS5KMH-3 • 2 .5V D R IV E • VDSS . 150V • rDS ON (MAX) .0.35Q

FS10KM06

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-06 HIGH-SPEED SWITCHING USE FS10KM-06 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS .60V • rDS ON (MAX) . 78mi2

Contextual Info: i MITSUBISHI Neh POWER MOSFET FS5KMJ-06 HIGH-SPEED SWITCHING USE FS5KMJ-06 OUTLINE DRAWING Dimensions in mm • 4V DRIVE • VDSS . 60V • TDS ON (MAX) .

MITSUBISHI CNC

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70KMJ-03 HIGH-SPEED SWITCHING USE FS70KMJ-03 • 4V D R IVE • VDSS .30V • rDS ON (MAX) .1 2 m Q

zt102

Contextual Info: MITSUBISHI Nch POWER MOSFET I FK20KM-5 î HIGH-SPEED SWITCHING USE FK20KM-5 OUTLINE DRAWING Dimensions in mm • VDSS . •250V • rDS ON (MAX) . 0.24Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50KMJ-3 HIGH-SPEED SWITCHING USE FSSOKMJ-3 OUTLINE DRAWING Dimensions in mm • 4V DRIVE • Vdss .150V • rDS ON (MAX) .30m0

fs5kmj-06

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KMJ-06 HIGH-SPEED SWITCHING USE FS5KMJ-06 • 4V D R IVE • VDSS . 60V • rDS ON (MAX) . • 0 .1 4 Q

40OV

Abstract: cc 1029
Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KM-3 HIGH-SPEED SWITCHING USE FS30KM-3 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS . 150V • ros ON (MAX) . 92m fi

Contextual Info: MITSUBISHI Nch POWER MOSFET FS70KM-03 HIGH-SPEED SWITCHING USE FS70KM-03 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS .30V • rDS ON (MAX) .14m i2

fs2km-3

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-3 HIGH-SPEED SWITCHING USE FS2KM-3 OUTLINE DRAWING D im ensions in mm • 10V DRIVE • VDSS . 150V • rDS ON (MAX) .0.8S2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50KMH-2 HIGH-SPEED SWITCHING USE FS50KMH-2 OUTLINE DRAWING Dimensions in mm 10 ±0 .3 2.8 ±0.2 • 2.5V DRIVE • VDSS . • TDS ON (MAX) .