Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25 Features 1 Low drain-source ON resistance:RDS(on)typ. = 12.0m （VGS = -2.5 V)
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TT4-EA-14292
FJ3P02100L
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IT 255
Abstract: SHARP I A05 M61311SP M61316SP PRDP0032BA-A
Text: M61311SP/M61316SP l2C BUS Controlled Video Pre-amp for High Resolution Color Display REJ03F0199-0201 Rev.2.01 Mar 31, 2008 Description M61311SP/M61316SP is semiconductor integrated circuit for CRT display monitor. It includes OSD blanking, OSD mixing, retrace blanking, video detector, sync separator, wide band amplifier,
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M61311SP/M61316SP
REJ03F0199-0201
M61311SP/M61316SP
M61311SP)
M61316SP)
IT 255
SHARP I A05
M61311SP
M61316SP
PRDP0032BA-A
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vertical JFET
Abstract: diode c23 jfet cascode AN8610 spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet
Text: Harris Semiconductor No. AN8610.1 Harris Power MOSFETs February 1994 SPICING-UP SPICE II SOFTWARE FOR POWER MOSFET MODELING Author: C.F. Wheatley, Jr., H.R. Ronan, Jr., G.M. Dolny The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated
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AN8610
vertical JFET
diode c23
jfet cascode
spice models
P-Channel Depletion Mosfets
IRF130 datasheet
list of P channel power mosfet
DEPLETION MOSFET
Harris Semiconductor jfet
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P0110009P
Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120009P
48dBm
OT-89
17GHz
KP029J
P0120009P
P0110009P
gaas fet marking a
ISO-14001
KP029J
RR0816
48dBm High power fet 2.4ghz
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sumitomo 131 datasheet
Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120008P
43dBm
OT-89
17GHz
KP028J
P0120008P
sumitomo 131 datasheet
DC 8881
ml marking
ml marking sot 89
ISO-14001
KP028J
RR0816
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Power MOSFET Switching Waveforms A New Insight
Abstract: jfet cascode IRF130 AN-7506 vertical JFET intersil jfet mosfet SPICE MODEL
Text: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note Title N86 bt pic-Up ce Softre r wer OST odel utho eyrds terrpoon, minctor, er ) OCI O frk The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated
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AN0017
Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
Text: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from
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CHA3693-QDG
20-30GHz
CHA3693-QDG
20-30GHz
20dBm
330mA
28dBm
24L-QFN4x4
DSCHA3693-QDG7268
AN0017
qfn 76 PACKAGE footprint
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P012
Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120008P
43dBm
OT-89
P0120008P
P012
ISO-14001
KP028J
RR0816
marking c7 sot-89
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Sanken 2011
Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Package Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD PKG TO220S Applications ･DC−DC converter ･Mortar drive Internal Equivalent Circuit
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100uA)
O220S
Sanken 2011
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5R280
Abstract: MGA-72543 CDMA800 IS-136 MGA-71543 MGA-71543-BLK MGA-71543-TR1 MGA-71543-TR2 RLM020199 l3 sot343-4
Text: Agilent MGA-71543 Low Noise Amplifier with Mitigated Bypass Switch Data Sheet Features • Operating frequency: 0.1 GHz ~ 6.0 GHz • Noise figure: 0.8 dB NFmin • Gain: 16 dB • Average Idd = 2mA in CDMA handset Description Agilent’s MGA-71543 is an
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MGA-71543
MGA-71543
FDG6303N
5980-2917EN
88759/06-PM60J-11
5R280
MGA-72543
CDMA800
IS-136
MGA-71543-BLK
MGA-71543-TR1
MGA-71543-TR2
RLM020199
l3 sot343-4
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RF SWITCH 002 0808
Abstract: ADC ic adc 809 C10L3
Text: Agilent MGA-71543 Low Noise Amplifier with Mitigated Bypass Switch Data Sheet Features • Lead-free Option Available Description Agilent’s MGA-71543 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA , which is designed for adaptive CDMA and W-CDMA receiver
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MGA-71543
IS-95,
J-STD-008)
IS-136)
OT-343/4-lead
FDG6303N
5989-1807EN
5989-3743EN
RF SWITCH 002 0808
ADC ic adc 809
C10L3
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Untitled
Abstract: No abstract text available
Text: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)
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2SK3879
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fkp202
Abstract: No abstract text available
Text: N-Channel MOS FET FKP202 •Features March. 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)
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FKP202
Package---FM20
PW100sduty
180HILp
T02-006EA-070227
fkp202
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Untitled
Abstract: No abstract text available
Text: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252 V(BR)DSS - 60 V (ID = 100 µA) ID - 47 A RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)
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DKI06108
O-252
DKI06108-DS
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Untitled
Abstract: No abstract text available
Text: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous
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OCR Scan
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SDF17N60
MIL-S-1950-
IF-17A
i/dt-100A/
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Untitled
Abstract: No abstract text available
Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500
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IXTH/IXTM21N50
IXTH/IXTM24N50
O-247
21N50
24N50
4bflb22b
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000V 36A 0.24Q V,DSS ^D25 R,DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions v DSS Td = 25°C to 150°C
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36N100
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Untitled
Abstract: No abstract text available
Text: TA8851CN TO SH IBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T• A U D IO /V ID E O Am »f S W IT C H IC t FO R f TV t R i W IT H r SILICON MONOLITHIC N■ « S -T E R M IN A L S The T A 8851 CN is an A / V SWITCH IC, which has 7 input channels and 2 output channels. Because the 2 output
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TA8851CN
SDIP54-P-600-1
S25-a,
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IXFH21N50
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
O-247
IXFT24N50
IXFH26N50
IXFM26N50
IXFT26N50
IXFH21N50
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IXFH58N20
Abstract: No abstract text available
Text: □ IXYS HiPerFET Power MOSFETs V DSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family D DS on ^D25 42 A 60m Q 50 A 45m Q 58 A 40m Q 200 V 200 V 200 V trr < 200 ns TO-247 AD (IXFH) Maximum Ratings
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IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
O-247
IXFT58N20
IXFH50N20
IXFM50N20
IXFT50N20
IXFH58N20
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MflSSMSE 1^3 ■ INR Bulletin E27108 International S Rectifier IRFK4HC50,IRFK4JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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E27108
IRFK4HC50
IRFK4JC50
E78996.
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APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
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APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
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IRF013
Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF610/611/612/613
O-220
IRF610
IRF611
IRF612
IRF613
IRF013
D33A
power MOSFET IRF610
1RF610
irf610 samsung
irf610 mosfet
IRF61Q
613 33A
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1DS6
Abstract: SDF12N100
Text: Æ lltro n FRODUCT DEVICES.INC. CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER' SYMBOL D r a in - s o u r c e V o l t . l D r a in - G a t e V o lt a g e (R g s =1.0M o ) (1 ) G a t e - S o u r c e V o lt a g e Con t i nuous
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00A/jjLS
300nS,
SDF12N100
1DS6
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