VEBO 12V Search Results

Contextual Info: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2144S

Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

2SD2144S

Abstract: 2SD2114K SC-72 T146
Contextual Info: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).

KTD1304

Abstract: VEBO-12V
Contextual Info: SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . E B L L ᴌHigh Reverse hFE ᴌLow on Resistance : RON=0.6ή(Max.) (IB=1mA). H 1 P Collector-Base Voltage

QST8

Contextual Info: QST8 Transistors General purpose amplification −12V, −1.5A QST8 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO

2SD2537

Contextual Info: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zExternal dimensions (Unit : mm) 2SD2537 4.0 1.5

Contextual Info: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zExternal dimensions (Unit : mm) 2SD2537 4.0 1.5

Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)

2SD2537

Abstract: T100
Contextual Info: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.5

Contextual Info: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Dimensions (Unit : mm) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

2SD2537

Abstract: T100 VEBO-12V
Contextual Info: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.5

7826 Transistor

Abstract: marking code Sk transistors
Contextual Info: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)

2SC4536

Abstract: 2SC454 2SC4568 T74100
Contextual Info: h:7 « S ±S ’ . S § m • 2 S C 4 5 3 6 : -7-i 5 afäimmVIWiHSo MiimvmtcMMv m i n * «Ä B l! Vceo (V 15 CATV"? Vebo (V) 3 Ic(mA) 250 Pt (W>* 2 T j (°C) 150 * « u s w 0 2 S C 4 5 3 7 S SL d i S : VHF/UHF ß v f i g i f t a M SHF Vceo (V) 11 Vebo (V)

QST8

Contextual Info: QST8 Transistors General purpose amplification −12V, −1.5A QST8 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO

Contextual Info: QST8 Transistors General purpose amplification −12V, −1.5A QST8 External dimensions (Unit : mm) Application Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO

TO-92M

Abstract: KTD1303
Contextual Info: SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . A ᴌHigh Reverse hFE O F : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA).

Contextual Info: SEMICONDUCTOR KTD1302 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B C ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . A ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA).

L2SD2114KVLT1

Abstract: L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1 zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 3

Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.)

ktd1303

Contextual Info: SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B ・High Emitter-Base Voltage : VEBO=12V Min. . A ・High Reverse hFE O F : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ・Low on Resistance :RON=0.6Ω(Typ.) (IB=1mA).