VEBO 7V Search Results

2SD1585

Abstract: 2SB1094 K 4080
Contextual Info: SavantIC Semiconductor Product Specification 2SD1585 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·VCEO 60V;VEBO 7V;IC DC 3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications

mje13003

Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

transistor mje13003

Abstract: mje13003 MJE13003 transistor UTCMJE13003 QW-R203-017 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO

QW-R203-019

Abstract: MJE13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

2SB1094

Abstract: 2SD1585 vebo7v
Contextual Info: Product Specification www.jmnic.com 2SD1585 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・VCEO≥60V;VEBO≥7V;IC DC ≤3.0A ・Complement to type 2SB1094 APPLICATIONS ・For use in audio frequency power amplifier and general purpose applications

PT 10000

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

MJE13005

Abstract: mje-13005 QW-R203-018 PT 10000
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

equivalent mje13005

Abstract: MJE13005 ib11
Contextual Info: MJE13005 NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 75 Emitter-Base Voltage

transistor MJe13007

Abstract: mje13007 equivalent MJE13007 transistormje13007
Contextual Info: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current

2SB0939

Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Contextual Info: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation

Contextual Info: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ

Contextual Info: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2

2SC4908

Abstract: FM20
Contextual Info: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A DSA003711
Contextual Info: Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation Ta=25°C 45 PC

2SA1971

Contextual Info: Transistors SMD Type Silicon PNP Triple Diffused Type 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO

2SC4518

Abstract: 2SC4518A FM20
Contextual Info: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE

KSC5039

Abstract: NPN Transistor TO220 vcc 150V
Contextual Info: KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO Symbol 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current DC

TO220 HEATSINK DATASHEET

Abstract: 2SC5239 ATV3 transistor 800V 1A
Contextual Info: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2

Contextual Info: Transistors SMD Type Product specification 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V Collector current

Contextual Info: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ

Contextual Info: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 • Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. 14.5±0.5 ● 1.0 ● (0.5) (1.0)