Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VF20120S Search Results

    SF Impression Pixel

    VF20120S Price and Stock

    Vishay Semiconductors VF20120S-E3-4W

    DIODE SCHOTTKY 120V 20A ITO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VF20120S-E3-4W Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.67611
    • 10000 $0.67611
    		Buy Now

    Vishay Semiconductors VF20120S-E3-45

    DIODE SCHOTTKY 120V 20A ITO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VF20120S-E3-45 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.60294
    • 10000 $0.60294
    		Buy Now

    Vishay Semiconductors VF20120S-M3-4W

    DIODE SCHOTTKY 120V 20A ITO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VF20120S-M3-4W Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4912
    • 10000 $0.4912
    		Buy Now

    Vishay Semiconductors VF20120SG-E3-45

    DIODE SCHOTTKY 120V 20A ITO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VF20120SG-E3-45 Tube 50
    • 1 -
    • 10 -
    • 100 $0.8052
    • 1000 $0.8052
    • 10000 $0.8052
    		Buy Now

    Vishay Semiconductors VF20120SG-E3-4W

    DIODE SCHOTTKY 120V 20A ITO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VF20120SG-E3-4W Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.50461
    • 10000 $0.50461
    		Buy Now
    Find more VF20120S price and stock on Findchips.com

    VF20120S Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VF20120S-E3/45 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A ITO220AB Original PDF
    VF20120S-E3/4W Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A ITO220AB Original PDF
    VF20120SG-E3/4W Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A ITO220AB Original PDF
    VF20120SG-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V ITO220AB Original PDF
    VF20120S-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V ITO220AB Original PDF

    VF20120S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A

    vf20120sg

    Abstract: J-STD-002B
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020C, O-263AB O-220AB, vf20120sg J-STD-002B

    J-STD-002

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB O-220AB, J-STD-002

    vf20120sg

    Abstract: J-STD-002
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020, O-263AB VF20120SG vf20120sg J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106

    J-STD-002

    Abstract: 1412D
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 1412D

    v20120s

    Abstract: No abstract text available
    Text: V20120S, VF20120S & VI20120S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.491 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VF20120S VI20120S O-220AB ITO-220AB V20120S 2002/95/EC 2002/96/EC O-262AA v20120s

    Untitled

    Abstract: No abstract text available
    Text: V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120SG 22-B106

    J-STD-002

    Abstract: VF20120SG
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 J-STD-002 VF20120SG

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S O-220AB ITO-220AB V20120S VF20120S J-STD-020, O-263AB

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11

    vf20120sg

    Abstract: No abstract text available
    Text: V20120SG & VF20120SG New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.540 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF V20120SG VF20120SG O-220AB ITO-220AB 2002/95/EC 2002/96/EC O-220AB ITO-220AB vf20120sg

    Untitled

    Abstract: No abstract text available
    Text: V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120S VF20120S

    J-STD-002

    Abstract: V20120
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 V20120

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A

    J-STD-002

    Abstract: VF20120SG
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 J-STD-002 VF20120SG

    V20120S

    Abstract: J-STD-002B 1412D
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020C, O-263AB O-220AB, V20120S J-STD-002B 1412D

    Untitled

    Abstract: No abstract text available
    Text: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VF20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF VF20120S ITO-220AB 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106