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    VHF LINEAR PULSE POWER AMPLIFIER Search Results

    VHF LINEAR PULSE POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    VHF LINEAR PULSE POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3cx1500

    Abstract: EIMAC 8938 3CX1500C7 vhf linear pulse power amplifier SK-2220 8938 8938 datasheet uhf linear amplifier uhf triode power 3cx1500c
    Text: The 3CX1500C7/8938 is a rugged coaxial base power triode designed for use as a cathode driven Class AB2 or Class C amplifier. It is recommended for VHF or UHF service as a linear amplifier, power amplifier, or pulse amplifier. Linearity and power gain are both excellent due to the low ratio of grid


    Original     		PDF 3CX1500C7/8938 3cX1500C7/ 4CW50 3CX1500C7/8938 3cx1500 EIMAC 8938 3CX1500C7 vhf linear pulse power amplifier SK-2220 8938 8938 datasheet uhf linear amplifier uhf triode power 3cx1500c

    yu-157

    Abstract: vhf linear pulse power amplifier EIMAC YU157
    Text: The 3CW2500C7/YU-157 is a rugged coaxial base power triode designed for use as a cathode driven Class AB2 or Class C amplifier. It is recommended for VHF or UHF service as a linear amplifier, power amplifier, or pulse amplifier. Linearity and power gain are both excellent due to the low ratio of grid


    Original     		PDF 3CW2500C7/YU-157 3CW2500C7 4CW50 YU-157 yu-157 vhf linear pulse power amplifier EIMAC YU157

    BLW83

    Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and


    Original     		PDF BLW83 BLW83 philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF

    tb62506fg

    Abstract: TB62207BFG tb62506 TB62207 ULN2803APG ULN2003APG toshiba uln2803apg TPD1047F ULN2003APG motor TB62201AFG
    Text: General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs z 118 Intelligent Power Devices (IPDs) z 121 Interface Drivers z 124 Motor Drivers z 127 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 142 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs


    Original     		PDF TA75S393F TA75S01F TB7600CTC/TU TB7601CTC/TU TB7602CTC/TU TA4107F 12dBmW tb62506fg TB62207BFG tb62506 TB62207 ULN2803APG ULN2003APG toshiba uln2803apg TPD1047F ULN2003APG motor TB62201AFG

    BLV33

    Abstract: vhf linear amplifier sot147
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV33 VHF linear power transistor Product specification Supersedes data of November 1995 1996 Oct 10 Philips Semiconductors Product specification VHF linear power transistor BLV33 PINNING - SOT147 FEATURES • Diffused emitter ballasting resistors for an optimum


    Original     		PDF BLV33 OT147 SCA52 127041/1200/01/pp20 BLV33 vhf linear amplifier sot147

    vhf linear amplifier

    Abstract: vhf linear pulse power amplifier BLV33F MGG130
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor Product specification 1996 Oct 10 Philips Semiconductors Product specification VHF linear power transistor BLV33F PINNING - SOT119A FEATURES • Internally matched input for wideband operation and


    Original     		PDF BLV33F OT119A DESCRIPT31 SCA52 127041/1200/01/pp20 vhf linear amplifier vhf linear pulse power amplifier BLV33F MGG130

    TP-105

    Abstract: TP-118 Jettron Products MIL-STD-1311 vhf linear pulse power amplifier
    Text: Return To Product Page 8792 Power Tube Linear Beam Power Amplifier Tube • 1000 Watts Peak Sync Output in VHF Translator Service • 265 Watt Average-Noise-Power Output with White Noise Loading • 300 Watt Power Output in UHF-Linear Telephony Service •


    Original     		PDF TP-105. 7-360A TP-105 TP-118 Jettron Products MIL-STD-1311 vhf linear pulse power amplifier

    3CX10,000U7

    Abstract: SK-2500 EIMAC CV2240B vhf linear amplifier 3cx10000u7
    Text: The 3CX10,000U7 high-mu triode is intended for use as a cathode driven RF amplifier in the VHF spectrum. It is a very linear device making it ideally suited for TV service in addition to CW and pulsed RF amplifier service. The 3CX10,000U7 makes use of beam forming cathode and control


    Original     		PDF 3CX10 000U7 000U7 CV2240B CV2250B 000U7. 4CW50 3CX10,000U7 SK-2500 EIMAC vhf linear amplifier 3cx10000u7

    SK-2500

    Abstract: 3cx10000u7 "RF Amplifier" 10kw power Triode EIMAC beam Tube vhf linear pulse power amplifier CV2240B high power rf 10kW SK-2506
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 2 3CX10,000U7 The Eimac 3CX10,000U7 high-mu triode is intended for use as a cathode driven RF amplifier in the VHF spectrum. It is a very linear device making it ideally suited for TV sevice in addition to CW and


    Original     		PDF 3CX10 000U7 000U7 CV2240B CV2250B SK-2500 3cx10000u7 "RF Amplifier" 10kw power Triode EIMAC beam Tube vhf linear pulse power amplifier CV2240B high power rf 10kW SK-2506

    5CX1500B

    Abstract: EIMAC* 5CX1500A 5CX1500A 5cx1500 Svetlana Electron Devices SK840 SK-840 vhf linear pulse power amplifier
    Text: 5CX1500B Power Pentode T The Svetlana 5CX1500B is a high-performance ceramic/metal power pentode designed for use as a highly linear Class AB 1 linear amplifier. The pentode is ideal for VHF service and is recommended for use in FM broadcast transmitters. The


    Original     		PDF 5CX1500B 5CX1500B 5CX1500A EIMAC* 5CX1500A 5cx1500 Svetlana Electron Devices SK840 SK-840 vhf linear pulse power amplifier

    BLW96

    Abstract: PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLW96 SC08a BLW96 PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power


    Original     		PDF BLW96

    PR37

    Abstract: PR37 RESISTOR BLW96 philips blw96 BLW96 HF power amplifier PHILIPS 4312 amplifier trimmer 3-30 pf amplifier blw96 MGP700 727 Transistor power values
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power


    Original     		PDF BLW96 PR37 PR37 RESISTOR BLW96 philips blw96 BLW96 HF power amplifier PHILIPS 4312 amplifier trimmer 3-30 pf amplifier blw96 MGP700 727 Transistor power values

    MIL-STD-1311

    Abstract: 300 watt hf transistor 12 volt HF SSB APPLICATIONS RF 28 v 300 watt beam Tube vhf linear pulse power amplifier TP-105 TP-118 Jettron Products
    Text: Power Tube Linear Beam Power Amplifier Tube 1000 Watts Peak Sync Output in VHF Translator Service 265 Watt Average-Noise-Power Output with White Noise Loading 300 Watt Power Output in UHF-Linear Telephony Service Watts PEP Output in SSB Suppressed-Carrier Service


    Original     		PDF MIL-STD-1311. MIL-STD-1311 300 watt hf transistor 12 volt HF SSB APPLICATIONS RF 28 v 300 watt beam Tube vhf linear pulse power amplifier TP-105 TP-118 Jettron Products

    DVB-T Schematic

    Abstract: BLF881 C5750X7S2A106M DVB-T acpr AN10945 3T-20 c107 TRANSISTOR equivalent DVB-T transistor amplifier DVB-T 800B
    Text: AN10945 174 MHz to 230 MHz DVB-T power amplifier with the BLF881 Rev. 01 — 18 November 2010 Application note Document information Info Content Keywords BLF881, DVB-T, VHF, ACPR, LDMOS, power amplifier, linearity, efficiency, gain flatness, peak power Abstract


    Original     		PDF AN10945 BLF881 BLF881, BLF881 DVB-T Schematic C5750X7S2A106M DVB-T acpr AN10945 3T-20 c107 TRANSISTOR equivalent DVB-T transistor amplifier DVB-T 800B

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf

    Philips polystyrene capacitors

    Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB


    Original     		PDF BLW76 SC08a Philips polystyrene capacitors capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59

    2N5109 motorola

    Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.


    Original     		PDF AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b 'lE • D bbS3T31 D D E ^ D ll L APX T IE BLV36 VHF LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHF television transmitters and transposers vision or


    OCR Scan     		PDF bbS3T31 BLV36

    SSI32P541

    Abstract: MC1503 3183a 5.6V Dual High Frequency Differential Amplifiers RF transistor gain 20dB fully balanced amplifiers
    Text: SELECTION GUIDE OTHER LINEAR CIRUITS SILICON GENERÄL LINEAR INTEG RATED C IRCUITS IM h T y p lN iA ffffw tftn ^ P 80040 Dual Video Amplifier • Tape drives • Low level audio stage • • • • • • • • $ o t o a f fio a a o 3 Voltage Reference


    OCR Scan     		PDF 20MHz) TL040 300MHz 803163/3183A 100mA SSI32P541 MC1503 3183a 5.6V Dual High Frequency Differential Amplifiers RF transistor gain 20dB fully balanced amplifiers

    BLV33F

    Abstract: RF POWER TRANSISTOR NPN vhf
    Text: Philips Semiconductors Product specification VHF linear power transistor BLV33F FEATURES PINNING - SOT119A • Internally matched input for wideband operation and high power gain PIN SYMBOL • Diffused emitter ballasting resistors fo r an optimum temperature profile


    OCR Scan     		PDF BLV33F OT119A OT119A 7110flEh MBCS77 OT119A. 7110fl2b BLV33F RF POWER TRANSISTOR NPN vhf

    Philips polystyrene capacitor

    Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
    Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear


    OCR Scan     		PDF OT121B. BLW76 MGP517 Philips polystyrene capacitor ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor

    ferroxcube wideband hf choke

    Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
    Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance


    OCR Scan     		PDF BLW50F OT123 BLW50F ferroxcube wideband hf choke transistor 4312 PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier

    BLV33

    Abstract: OC-50 2x3 transistor
    Text: Philips Semiconductors Product specification VHF linear power transistor BLV33 FEATURES PINNING -S O T 1 47 • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures excellent reliability. APPLICATIONS


    OCR Scan     		PDF BLV33 OT147 71106Eb OT147. 711002b BLV33 OC-50 2x3 transistor