VHF TRANSISTORS Search Results

bf679

Abstract: BF680 BF 679 75176 PD 680 820Q
Contextual Info: BF 679 • BF 680 Silizium-PNP-HF-T ransistoren Silicon PNP RF Transistors Anwendungen: BF 679: Regelbare UHF/VHF-Elngangsstufein BF 680: UHF/VHF-Oszillator und M ischerstufen Applications: BF 679: Gain controlled UHF/VHF input stages BF 680: UHF/VHF-Oscillator and m ixer stages

MFE201

Abstract: MFE203 MFE201 application notes MFE202 s163h dual-gate
Contextual Info: '' N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED M O S FIELD-EFFECT TRANSISTORS • MFE201 thru . , . depletion mode dual gate transistors designed for VHF amplifier and mixer applications, MFE203 • MFE201 — VHF Amplifier MFE202 — VHF Mixer MFE203 — IF Am plifier

TRIMMER capacitor 5-60 pF

Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
Contextual Info: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".

MRF239

Abstract: mrf239 MOTOROLA Motorola 2N6080 2N5591 MOTOROLA MRF212 MRF238 MOTOROLA MRF4070 Motorola 2N6083 MRF247 mrf237 MOTOROLA
Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued C ASE 317D-01 C ASE 316-01 CASE 26-03 TO-2Q6AB VHF Applications (continued) 136-174 MHz, High-Band/VHF FM Transistors The “workhorse” VHF FM High-Band is served by Motorola with the broadest range of devices arid package combinations in

transistor marking 3em

Abstract: MMBTH10
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF

transistors cross reference

Contextual Info: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.

M111

Abstract: M130 M164 SD1455 SD1456 SD1458 SD1459 SD1476 TCC3100
Contextual Info: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

2SC1365

Abstract: NE741 2sc1252 74113 NE74100
Contextual Info: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low

2N4957 JANTX

Contextual Info: 2N4957 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957 is a military qualified silicon PNP amplifier transistor designed for VHF-UHF

transistors mos

Contextual Info: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

2n3632

Contextual Info: 2N3632 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WI. 1 of 1 Home Part Number: 2N3632 Online Store 2N3632 Diodes RF Transistors & M IC RO WAVE TRANSISTO RS VHF - UHF C LASS C WIDE BAND Integrated Circuits

j105 transistor

Abstract: MS1009 J108 - TRANSISTOR
Contextual Info: MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1009 is a silicon NPN bipolar transistor designed primarily for VHF communication applications. Gold

3N211

Abstract: Depletion
Contextual Info: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series

CHIP TRANSISTOR

Abstract: gp 219 NPN planar RF transistor SD1127
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN

SN 74114

Abstract: 2SC1365 ta 5732 2SC1252 s735 NE74113
Contextual Info: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low distortion and noise figures make it an excellent choice for

Contextual Info: Micmsemi m m m RF Products a Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series

SD1019

Contextual Info: SD1019 RF AND MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 MHz 13.5 V COMMON EMITTER POUT = 30 W MIN. GAIN = 4.5 dB DESCRIPTION: The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.

Contextual Info: MS1327 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 136 MHz 28 VOLTS POUT = 50 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1327 is a 28V epitaxial silicon NPN planar transistor designed primarily for VHF communications. Gold metalization

2SC1393

Abstract: 2SC1394 c1393 2sc13
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC1393,2SC1394 NPN SILICON EPITAXIAL TRANSISTOR 2SC1393 : VHF RF AMPLIFIER 2S C 1394 : VHF MIXER FOR TV TUNER FEATURES PACKAGE DIMENSIONS U nit : mm • Low NF high G pe. NF = 2.0dB TV P . Gpe = 24dB TYP. (f = 200M Hz)

BF362

Abstract: TFK S 741 gain bandwidth product TFK 03 BF363
Contextual Info: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages