VISHAY DALE 800 OHM RESISTORS Search Results

Vishay Dale 250 ohm resistor ohm

Abstract: dale fp1 Vishay Dale 200 ohm resistors Vishay Dale 800 ohm resistors 250R metal film resistors vishay FP1 2k00 resistor BY560 Vishay Dale 1 ohm resistorS dale resistor code
Contextual Info: FP1/2P, 1P, 2P, 3P, 69P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning

vishay FP1 2k00 resistor

Abstract: FP3P Vishay Dale 1 ohm resistorS VISHAY FP1 fp2p dale fp1
Contextual Info: FP1/2P, 1P, 2P, 3P, 69P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning

FP3P

Abstract: vishay FP1 2k00 resistor FP69P FP2P Vishay Dale 250 ohm resistor ohm BY560 FP1P dale fp1 dale fuse resistor 250R
Contextual Info: MODELS FP1/2P, 1P, 2P, 3P, 69P Metal Film Resistors Pulse Withstanding Protective FEATURES • Special Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge

Contextual Info: FP.P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities

250R

Abstract: Vishay Dale 1 ohm resistorS
Contextual Info: FP.P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities

marking code 9r

Abstract: FP069
Contextual Info: FP.P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities

Contextual Info: FP.P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities

Vishay Dale 1 ohm resistorS

Abstract: FP3P
Contextual Info: FP1/2P, 1P, 2P, 3P, 69P Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning

nh-50 dale resistors

Abstract: sfernice RH100 marking RH MIL-R-18546 RH25 100 Ohm RH50 3 RE80N dale rh dale RH-50 RH-25
Contextual Info: MODELS RH and NH Wirewound Resistors Military, MIL-R-18546 Qualified, Type RE Aluminum Housed, Chassis Mount FEATURES SPECIAL MODIFICATIONS • Standard winding Model RH Available upon request • Special: Threaded mounting holes Housing configurations Resistance-temperature characteristic

MRF374A

Abstract: marking c14a l1a marking
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: RF POWER VERTICAL MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: j352 transistor j352 bc17a VJ2225Y
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor L1A

Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

C3B Kemet

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO30

Abstract: mrf374
Contextual Info: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

SMD 1206 RESISTOR 100 OHMS

Abstract: 4148 vishay smd WE-MIDCOM TDK PTC 1206 1206 package resistor,4.7k resistor array C3216COG2A103J molex 90120-0122 epcos 100nF 400v NCL30001 Zener Diode 4148
Contextual Info: AND8427/D A Constant Current Adjustable 0.7 A to 1.5 A, Up to 55 Vdc Single Stage Power Factor Corrected LED Power Supply http://onsemi.com APPLICATION NOTE Prepared by: Frank Cathell ON Semiconductor Introduction Platinum and Golden Dragon Plus. The use of these type of

transistor R1A 37

Abstract: 5233 mosfet J146 VJ1210y
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

balun 50 kW

Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RDX2

Contextual Info: MODEL ROX Metal Oxide Resistors Special Purpose, High Voltage FEATURES • Low TC: ± 200PPM/°C standard. ± 100PPM/°C, ± 50PPM/°C available. • Tolerances: ± 1%, ± 2%, ± 5%, ± 10% • For oil bath or open air operation • Matched sets available

marking c14a

Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Contextual Info: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

marking c14a

Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor j352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this