VISHAY MARKING MOSFET Search Results

VISHAY MARKING MOSFET Result Highlights (5)

Part	Manufacturer	Description
ICL7667MJA/883B	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA)
ICL7667MTV/883B	Rochester Electronics LLC	ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC)
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E

VISHAY MARKING MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si1907DL New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.650 @ VGS = –4.5 V "0.56 0.925 @ VGS = –2.5 V "0.47 1.310 @ VGS = –1.8 V "0.39 QC XX YY Marking Code Lot Traceability and Date Code	Original	Si1907DL S-99184--Rev. 01-Nov-99	PDF
vishay siliconix code marking Contextual Info: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code	OCR Scan	S-01830-- 21-Aug-00 S-01830--Rev. vishay siliconix code marking	PDF
A96V Abstract: Si2326DS Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2326DS O-236 OT-23) S-2381--Rev. 23-Oct-00 A96V	PDF
Si2320DS Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2320DS O-236 OT-23) 18-Jul-08	PDF
Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2326DS O-236 OT-23) 08-Apr-05	PDF
Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov	PDF
Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov	PDF
Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code	Original	Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05	PDF
Si2320DS Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov	PDF
Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2320DS O-236 OT-23) 08-Apr-05	PDF
Si2301DS-T1 Abstract: SI2301DS A1 marking code Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code	Original	Si2301DS O-236 OT-23) Si2301DS-T1 18-Jul-08 A1 marking code	PDF
A96V Abstract: Si2328DS SI2328ds rev Contextual Info: Si2328DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2328DS O-236 OT-23) S-05372--Rev. 25-Dec-01 A96V SI2328ds rev	PDF
Si2326DS Abstract: A96V S2381 Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2326DS O-236 OT-23) 18-Jul-08 A96V S2381	PDF
SI2301DS Abstract: Si2301DS-T1 70627 Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code	Original	Si2301DS O-236 OT-23) Si2301DS-T1 S-31990--Rev. 13-Oct-03 70627	PDF

SI5435BDC Abstract: Si5435BDC-T1 Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code	Original	Si5435BDC Si5435BDC-T1--E3 18-Jul-08 Si5435BDC-T1	PDF
P-Channel 1.8-V G-S MOSFET sot-323 Abstract: Si1305DL Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability	Original	Si1305DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 P-Channel 1.8-V G-S MOSFET sot-323	PDF
TP0610K-T1-E3 Abstract: TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3 Contextual Info: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability	Original	TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3	PDF
Si1307EDL Abstract: Si1307DL Contextual Info: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code	Original	Si1307EDL OT-323 SC-70 18-Jul-08 Si1307DL	PDF
TP0610K-T1-E Abstract: TP0610K-T1-E3 Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability	Original	TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3	PDF
Si1301DL Contextual Info: Si1301DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-323 SC-70 (3-Leads) 1 LG 3 S XX YY Marking Code G Lot Traceability and Date Code	Original	Si1301DL OT-323 SC-70 S-01830--Rev. 21-Aug-00	PDF
Si2309DS Abstract: Si2309DS-T1 Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code	Original	Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 18-Jul-08	PDF
Si5435BDC-T1 Abstract: SI5435BDC Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code	Original	Si5435BDC Si5435BDC-T1--E3 08-Apr-05 Si5435BDC-T1	PDF
Si1305DL Contextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code	Original	Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99	PDF
TP0610K-T1 Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3 Contextual Info: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability	Original	TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/lectual 18-Jul-08 TP0610K-T1 TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3	PDF

VISHAY MARKING MOSFET Search Results

VISHAY MARKING MOSFET Result Highlights (5)

VISHAY MARKING MOSFET Datasheets Context Search

vishay siliconix code marking

A96V

Si2320DS

Si2320DS

Si2301DS-T1

A96V

Si2326DS

SI2301DS

SI5435BDC

P-Channel 1.8-V G-S MOSFET sot-323

TP0610K-T1-E3

Si1307EDL

TP0610K-T1-E

Si1301DL

Si2309DS

Si5435BDC-T1

Si1305DL

TP0610K-T1