VISHAY RECTIFIER BRIDGE Search Results
VISHAY RECTIFIER BRIDGE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CRG09A |
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General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT |
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CMG03A |
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General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT |
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CRG10A |
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General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT |
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CRG04A |
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General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT |
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CRG09B |
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General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT |
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VISHAY RECTIFIER BRIDGE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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B250 Bridge Rectifiers
Abstract: b40 bridge rectifier B250 bridge diode B80 rectifier B125 B125C800DM B380 B380C800DM B40C800DM BRIDGE RECTIFIER B80
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B40C800DM B380C800DM 50MVp-p 04-Mar-02 B250 Bridge Rectifiers b40 bridge rectifier B250 bridge diode B80 rectifier B125 B125C800DM B380 B380C800DM BRIDGE RECTIFIER B80 | |
b40 bridge rectifier
Abstract: B80 rectifier b250 bridge rectifier C800DM
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B40C800DM B380C800DM 50MVp-p 17-Jul-03 b40 bridge rectifier B80 rectifier b250 bridge rectifier C800DM | |
GBPC1005
Abstract: GBPC110
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GBPC1005 GBPC110 E54214 19-Feb-02 GBPC110 | |
GBPC1005
Abstract: GBPC110
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GBPC1005 GBPC110 E54214 50mVp-p 19-Feb-02 GBPC110 | |
Contextual Info: GSIB6A20 thru GSIB6A80 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Rectifier Reverse Voltage 200 and 800V Rectifier Forward Current 6.0A Features Case Style 5S 4.6 ± 0.2 3.6 ± 0.2 2.2 ± 0.2 |
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GSIB6A20 GSIB6A80 E54214 1-Dec-03 | |
2W08G
Abstract: 2W005G 2W01G 2W02G 2W04G 2W06G 2W10G
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2W005G 2W10G E54214 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G | |
GSIB6A20
Abstract: GSIB6A40 GSIB6A60 GSIB6A80
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GSIB6A20 GSIB6A80 50mVp-p 25-Mar-02 GSIB6A40 GSIB6A60 GSIB6A80 | |
2 A GLASS PASSIVATED BRIDGE RECTIFIER
Abstract: 2W005G 2W01G 2W02G 2W04G 2W06G 2W10G
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2W005G 2W10G E54214 50mVp-p 28-Feb-02 2 A GLASS PASSIVATED BRIDGE RECTIFIER 2W01G 2W02G 2W04G 2W06G 2W10G | |
2 A GLASS PASSIVATED BRIDGE RECTIFIER
Abstract: GSIB6A20 GSIB6A40 GSIB6A60 GSIB6A80
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GSIB6A20 GSIB6A80 50mVp-p 25-Mar-02 2 A GLASS PASSIVATED BRIDGE RECTIFIER GSIB6A40 GSIB6A60 GSIB6A80 | |
Contextual Info: GSIB6A20 thru GSIB6A80 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Rectifier Reverse Voltage 200 and 800V Rectifier Forward Current 6.0A Features Case Style 5S 4.6 ± 0.2 5 + 3.2 ± 0.2 17.5 ± 0.5 |
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GSIB6A20 GSIB6A80 E54214 50mVp-p 13-Aug-03 | |
GSIB620
Abstract: GSIB640 GSIB660 GSIB680
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GSIB620 GSIB680 E54214 1-Dec-03 GSIB640 GSIB660 GSIB680 | |
GSIB660
Abstract: 2 A GLASS PASSIVATED BRIDGE RECTIFIER gsib680 GSIB620 GSIB640
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GSIB620 GSIB680 50mVp-p 22-Mar-02 GSIB660 2 A GLASS PASSIVATED BRIDGE RECTIFIER gsib680 GSIB640 | |
GSIB620
Abstract: GSIB640 GSIB660 GSIB680
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GSIB620 GSIB680 50mVp-p 22-Mar-02 GSIB640 GSIB660 GSIB680 | |
88648Contextual Info: GSIB620 thru GSIB680 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Rectifier Reverse Voltage 200 and 800 V Rectifier Forward Current 6.0 A Features Case Style GSIB-5S 4.6 ± 0.2 3.2 ± 0.2 17.5 ± 0.5 |
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GSIB620 GSIB680 E54214 21-Oct-03 88648 | |
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T01A transistor
Abstract: UNR221200L GRM31CR70J106KA01 philips 3f3 ferrite toroid crcw0603100rj T01A FET l01b sot-363 3f3 core SPDT stacked FET UNR211300L
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Si9122 Si9122 10-layer 17-Nov-05 T01A transistor UNR221200L GRM31CR70J106KA01 philips 3f3 ferrite toroid crcw0603100rj T01A FET l01b sot-363 3f3 core SPDT stacked FET UNR211300L | |
Soldering Process
Abstract: DO213-AB
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DO-214AC DO-214BA O-263 DO-214AA DO-214AB J-STD-020D. 12-Sep-13 Soldering Process DO213-AB | |
"General Semiconductor" DO-214AC
Abstract: MicroSMP Pad Layout TL 413 DO-213AA DO-220AA GL34
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DO-218 O-263 24-Apr-07 "General Semiconductor" DO-214AC MicroSMP Pad Layout TL 413 DO-213AA DO-220AA GL34 | |
vs-100mt060wspContextual Info: VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation |
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VS-100MT060WSP E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vs-100mt060wsp | |
Contextual Info: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation |
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VS-70MT060WSP E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation |
Original |
VS-70MT060WSP E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
70MT060WSP
Abstract: maximum non-repetitive peak current
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70MT060WSP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 70MT060WSP maximum non-repetitive peak current | |
Contextual Info: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor |
Original |
70MT060WSP 2002/95/EC 11-Mar-11 | |
88613
Abstract: GBPC610 J-STD-002B GBPC6005 gbpc601
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GBPC6005 GBPC610 UL-94V-0 J-STD-002B MIL-STD-750, E54214 10-Dec-04 88613 GBPC610 gbpc601 | |
2KBP005M
Abstract: 2KBP10M 3N253 3N254 3N259 J-STD-002B
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2KBP005M 2KBP10M, 3N253 3N259 UL-94V-0 J-STD-002B MIL-STD-750, E54214 J-STD-020C 23-Nov-04 2KBP10M 3N254 3N259 |