VISHAY SI9410 Search Results

P-Channel TrenchFET Power MOSFET SOT-23

Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other

0858T

Abstract: VP0610T siliconix catalog dual j-fet MMBFJ176
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit VishayÕs Website at www.vishay.com LITTLE FOOT¨ Power MOSFETs P-Channel MOSFETs LITTLE FOOT ¨ power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other

70593

Abstract: SI9420 Vishay SI9410 SI9400 AN803 Si9405 Si9410 dual mosfet so8 ic
Contextual Info: AN803 Vishay Siliconix Thermal Characteristics of Vishay Siliconix’s LITTLE FOOTR Family of Surface-Mount MOSFETs Although a wide selection of digital and linear ICs have been available in surface-mount packages for some time, circuits that require power devices have, for the most part, required

SI9410DY-T1

Abstract: Si9410BDY-E3 Si9410BDY-T1-E3 SI9410DY Si9410BDY TF11 Si9410BDY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si9410BDY vs. Si9410DY Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9410BDY Replaces Si9410DY Si9410BDY-E3 (Lead (Pb)-free version) Replaces Si9410DY Si9410BDY-T1 Replaces Si9410DY-T1

133532

Abstract: AN609 Si9410BDY
Contextual Info: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si9410BDY

Contextual Info: SPICE Device Model Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9410DY

Contextual Info: SPICE Device Model Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9410BDY

Contextual Info: SPICE Device Model Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9410BDY

Abstract: Si9410BDY-T1-E3
Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9410BDY-T1

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9410BDY

Abstract: Si9410BDY-T1-E3
Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9410BDY

Abstract: Si9410BDY-T1
Contextual Info: Si9410BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY

Contextual Info: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.0 0.040 @ VGS = 5 V 6.0 0.050 @ VGS = 4.5 V 5.4 30 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410DY

Contextual Info: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.0 0.040 @ VGS = 5 V 6.0 0.050 @ VGS = 4.5 V 5.4 30 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410DY

Si9410BDY-E3

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY

Si9410DY-T1

Abstract: Si9410DY 701.22
Contextual Info: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.0 0.040 @ VGS = 5 V 6.0 0.050 @ VGS = 4.5 V 5.4 30 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410DY

Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

dale r025f

Abstract: r025f nikon equivalent of mosfet in computer mother board 1N5819 CMPD2836 Si9130 Si9130DB Si9410DY vitramon CAPACITOR
Contextual Info: Si9130DB Vishay Siliconix Si9130DB Si9130 Demonstration Board FEATURES • • • • 5- and 3.3-V Step-Down Synchronous Converters Less than 500-µA Quiescent Current 25-µA Shutdown Current 5.5- to 30-V Input Operating Range DESCRIPTION The Si9130 Dual-Output Power-Supply Controller for

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Si9410DY

Contextual Info: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SO-8 N/C 8 D 2 7 D 3 6 D 5 D 1 S S G 4 G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC