VISHAY TSSOP-6 PACKAGE Search Results

VISHAY TSSOP-6 PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance

VISHAY TSSOP-6 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PACK-0007-6 Abstract: 72721 SOIC T1 diode Contextual Info: Device Orientation Vishay Siliconix Device Orientation MSOP, SOIC, SSOP and TSSOP Devices DEVICE ORIENTATION Package Method MSOP T1 SOIC T1 SSOP T1 TSSOP T1 User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification—PACK-0007-6	Original	Specification--PACK-0007-6 T-05206, PACK-0007-6 72721 SOIC T1 diode	PDF
IC 0116 Contextual Info: Package Information Vishay Siliconix POWER IC THERMALLY ENHANCED PowerPAKR TSSOP: 14/16-LEAD 3 8 D CL 6 N e −B− 7 R 4 E1 CL 8 GAUGE PLANE −H− 0.25 E SEATING PLANE q1 0.7500 R1 L L1 DETAIL A 1 0.7500 2 3 Ğ 0.07600 0.025−0.075 DP PIN 1 INDICATOR POLISH	Original	14/16-LEAD 31-Mar-05 5M-1982. MO-153, IC 0116	PDF
Si6410DQ Abstract: 70661 Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 08-Apr-05 70661	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D	Original	Si6866BDQ Si6866BDQ-T1 Si6866BDQ-T1--E3 08-Apr-05	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D	Original	Si6866BDQ Si6866BDQ-T1 Si6866BDQ-T1--E3 18-Jul-08	PDF
SI6410DQ Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI6410DQ Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
72511 Abstract: Si6433BDQ Si6433BDQ-T1 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D	Original	Si6433BDQ Si6433BDQ-T1 Si6433BDQ-T1--E3 S-50156--Rev. 31-Jan-05 72511	PDF
Si6410DQ Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 11-Mar-11	PDF
72511 Abstract: Si6433BDQ Si6433BDQ-T1 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D	Original	Si6433BDQ Si6433BDQ-T1 Si6433BDQ-T1--E3 08-Apr-05 72511	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D	Original	Si6866BDQ Si6866BDQ-T1 Si6866BDQ-T1--E3 S-50695--Rev. 18-Apr-05	PDF
MOSFET TSSOP-8 Abstract: SI6410DQ Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8	PDF
SI6410DQ Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 11-Mar-11	PDF
Si6410DQ Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D	Original	Si6410DQ Si6410DQ-T1-GE3 18-Jul-08	PDF

72511 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	Si6433BDQ Si6433BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 72511	PDF
Si6433BDQ Abstract: 72511 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	Si6433BDQ Si6433BDQ-T1-GE3 08-Apr-05 72511	PDF
72511 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	Si6433BDQ Si6433BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 72511	PDF
72511 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	Si6433BDQ Si6433BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 72511	PDF
72511 Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511	PDF
72511 Abstract: Si6433BDQ Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511	PDF
TSSOP-8 footprint Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY Contextual Info: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE	Original	AN1001 12-Dec-03 TSSOP-8 footprint MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY	PDF
AN1001 Abstract: Si6436DQ Si9936DY si9936 640 1 TSSOP8 Contextual Info: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE	Original	AN1001 MS-012 S-00164--Rev. 31-Jan-00 07-Jun-00 AN1001 Si6436DQ Si9936DY si9936 640 1 TSSOP8	PDF
Contextual Info: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS	Original	Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS	Original	Si6423DQ Si6423DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

VISHAY TSSOP-6 PACKAGE Search Results

VISHAY TSSOP-6 PACKAGE Result Highlights (5)

VISHAY TSSOP-6 PACKAGE Datasheets Context Search

PACK-0007-6

IC 0116

Si6410DQ

Si6866BDQ

Si6866BDQ

SI6410DQ

SI6410DQ

72511

Si6410DQ

72511

Si6866BDQ

MOSFET TSSOP-8

SI6410DQ

Si6410DQ

72511

Si6433BDQ

72511

72511

72511

72511

TSSOP-8 footprint

AN1001