VN0808L Search Results

VQ1006

Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

Contextual Info: VN0808 Oi Supertex /ÎÏC . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / D Order Number / Package DS ON ^D<ON) BV DGS (max) (min) TO-92 80V 4Q 1.5A VN0808L Features Advanced DMOS Technology I 1 Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

0808L

Abstract: s4 vishay VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

VN0808L

Abstract: VN0808LS VQ1006P
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

0808M

Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Contextual Info: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS

VN0808

Abstract: VN0808L 125ID
Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-92 80V 4Ω 1.5A VN0808L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VN0808 JJJSL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information D DS ON B V dss' Order Number / Package ^D(ON) b v dgs (max) (min) TO-92 80V 4Q 1.5A VN0808L Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

VQ1006P

Abstract: 0808L VN0808L VN0808LS
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

VN0808M

Abstract: VQ1006P VN0808L
Contextual Info: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)

Contextual Info: Supertex inc. VN0808 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ p Order Number / Package " d S ON 'tXON) (max) (min) TO-92 1.5A VN0808L 80V 4.on Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

Contextual Info: Tem ic VN0808L/M, VQ1006P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber V BR DSS M in (V) VN0808L 80 VN0808M VQ1006P 90 r DS(on) M ax (Q) I d (A) v GS(lji) (Y) 4 @ V GS = 10V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

VQ1006

Abstract: VN0808L VN0808LS VQ1006P
Contextual Info: _ VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) VN0808LS VQ1006P Id (A) i"DS(on) Max (Q) V GS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V

VN0808

Abstract: VN0808L
Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-92 80V 4.0Ω 1.5A VN0808L Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VN0808

Abstract: VN0808L
Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-92 80V 4.0Ω 1.5A VN0808L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

0808L

Abstract: 0808LS VN0808L equivalent VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

b0808

Abstract: VN0808L VN0808M VQ1006P
Contextual Info: VN0808L/M, VQ1006P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN0808L 80 VN0808M VQ1006P 90 rDS(on) Max (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

VN0808

Contextual Info: LJ Supertex. f f i c V N 0808 . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ Order Num ber / Package D D SiO N ) ^D ON) b v dgs (max) (min) TO-92 80V 4n 1.5A VN0808L Features Advanced DMOS Technology □ Free from secondary breakdown

VN0808M

Abstract: VN0808L VQ1006P
Contextual Info: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)

b0808

Abstract: VN0808L/M
Contextual Info: Tem ic VN0808L/M, VQ1006P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN0808L Mín (V) r DS(on) 80 VN0808M VQ1006P 90 Max (Q) VGS(th) Id (A) (V) 4@ VGs = 10 V 0.8 to 2 0.3 4@ VGs = 10 V 0.8 to 2 0.33 4@ VGS = 10 V

0808L

Abstract: VN0808M TO-226A to-237
Contextual Info: Tem ic VN0808L/M, VQ1006P S e m i c o n d u c to r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS M i n (V ) rDS(on) M a x ( Q ) V GS (th )(V ) 4 @ VG S = 10 V 0.8 to 2 0.3 4 @ V c s - 10 V 0.8 to 2 0.33 4 @ V q S = 10 V

Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP