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    VOLTAGE 10V MOS FET Search Results

    VOLTAGE 10V MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK2R4A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    XPN1300ANC
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00244 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    VOLTAGE 10V MOS FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3050

    Abstract: 2sk3050
    Contextual Info: 2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)


    Original     		2SK3050 K3050 K3050 2sk3050 PDF

    XP134A02A1SR

    Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
    Contextual Info: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A02A1SR XP134A02A1SR Vds10V XP134A11A1SR XP134A1275SR XP135A1145SR PDF

    SOT89 093 CD

    Abstract: mos sot-89 2g LF3A XP151A01C3MR XP151A03A7MR power mos thermal
    Contextual Info: XP151A01C3MR ♦ ♦ ▲ ♦ Power MOS FET N-Channel Power MOS FET DMOS Structure . x n -x „ „ AV Low On-State Resistance: 0.3 30 MAX • • • ^ • # ♦ Ultra High-Speed Switching ♦ SOT-23 Package Applications Notebook PCs Cellular and portable phones


    OCR Scan     		XP151A01C3MR OT-23 XP151A01C3MR XP162A02D5PR XP162A02D5PR SOT89 093 CD mos sot-89 2g LF3A XP151A03A7MR power mos thermal PDF

    LD4A

    Abstract: High-speed switching P-Channel mos ld3a
    Contextual Info: XP131A0150SR Power MOS FET ♦ N-Channel Power MOS FET ♦ DMOS Structure • Applications • Notebook PCs ♦ Low On-State Resistance: 0.0 50 MAX ? Cellular and portable phones • On-board power supplies # Li.ion battery systems ♦ Ultra High-Speed Switching


    OCR Scan     		XP131A0150SR XP131A0150SR XP134A11A1SR XP134A11A1SR XP134A11A1 LD4A High-speed switching P-Channel mos ld3a PDF

    XP162A02D5PR

    Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
    Contextual Info: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


    Original     		XP162A02D5PR OT-89 XP162A02D5PR OT-89 XP162A11C0PR XP162A12A6PR sot89 fet XP162A11 PDF

    Low Capacitance MOS FET

    Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
    Contextual Info: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description


    Original     		XP135A1145SR XP135A1145SR Vds10V Low Capacitance MOS FET Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET P Channel Ultra Low Gate Charge PDF

    XP135A1145SR

    Contextual Info: Power MOS FET ◆N-Channel/P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.045Ω max (Nch) ●Cellular and portable phones ●On-board power supplies 0.110Ω (max) (Pch) ◆Ultra High-Speed Switching


    Original     		XP135A1145SR PDF

    XP133A1145SR

    Contextual Info: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A1145SR XP133A1145SR PDF

    XP132A11A1SR

    Contextual Info: XP132A11A1SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.11Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones


    Original     		XP132A11A1SR XP132A11A1SR PDF

    XP133A0175SR

    Contextual Info: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A0175SR XP133A0175SR PDF

    XP134A11A1SR

    Contextual Info: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A11A1SR XP134A11A1SR PDF

    XP134A01A9SR

    Contextual Info: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A01A9SR XP134A01A9SR PDF

    SLA2402

    Contextual Info: High Voltage Full Bridge Drive ICs SLA2402M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line


    Original     		SLA2402M SLA2402 PDF

    XP132A1545SR

    Contextual Info: XP132A1545SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.045Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones


    Original     		XP132A1545SR XP132A1545SR PDF

    SLA2403M

    Abstract: SLA2403 full bridge gate driver
    Contextual Info: High Voltage Full Bridge Drive IC SLA2403M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line


    Original     		SLA2403M SLA2403M SLA2403 full bridge gate driver PDF

    SLA2402

    Abstract: SLA2402M VCC10A
    Contextual Info: High Voltage Full Bridge Drive ICs SLA2402M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line


    Original     		SLA2402M SLA2402 SLA2402M VCC10A PDF

    SLA2402M

    Abstract: SLA2402 vm85 VCC10A vm85a GL-115
    Contextual Info: High Voltage Full Bridge Drive IC SLA2402M Features External Dimensions unit: mm ● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line


    Original     		SLA2402M SLA2402M SLA2402 vm85 VCC10A vm85a GL-115 PDF

    XP132A01A0SR

    Contextual Info: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state


    Original     		XP132A01A0SR XP132A01A0SR PDF

    XP161A01A8PR

    Contextual Info: XP161A01A8PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.18Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A01A8PR is a N-Channel Power MOS FET with low on-state


    Original     		XP161A01A8PR OT-89 XP161A01A8PR OT-89 PDF

    SKP202

    Contextual Info: N-Channel MOS FET SKP202 •Features March. 2007 ■Package-TO-263 ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D 2 G (1) S (3) ■Absolute maximum ratings


    Original     		SKP202 Package---TO-263 PW100sduty 180HILp T02-007EA-070227 SKP202 PDF

    sanken

    Contextual Info: N-Channel MOS FET FKP250A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)


    Original     		FKP250A Package---FM100 PW100sduty T02-008EA-070531 sanken PDF

    FKP300A

    Abstract: fkp300a equivalent sanken FKP300A SANKEN FKP300 sanken power transistor B105 CF35
    Contextual Info: N-Channel MOS FET FKP300A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)


    Original     		FKP300A Package---FM100 T02-010EA-070531 FKP300A fkp300a equivalent sanken FKP300A SANKEN FKP300 sanken power transistor B105 CF35 PDF

    Fkp250a

    Abstract: Switching N-Channel Power MOS FET 50a B105 CF35 FKP250A characteristics
    Contextual Info: N-Channel MOS FET FKP250A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)


    Original     		FKP250A Package---FM100 T02-008EA-070531 Fkp250a Switching N-Channel Power MOS FET 50a B105 CF35 FKP250A characteristics PDF

    T02-010EA-070531

    Abstract: B105 CF35 FKP300A fkp300a equivalent
    Contextual Info: N-Channel MOS FET FKP300A •Features June, 2007 ■Package-FM100 TO-3P Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2)


    Original     		FKP300A Package---FM100 T02-010EA-070531 T02-010EA-070531 B105 CF35 FKP300A fkp300a equivalent PDF