VOLTAGE 15V,COLLECTOR CURRENT 40MA Search Results

npn 60V 600mw

Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
Contextual Info: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V

NTE2672

Abstract: VEBO-15V
Contextual Info: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp

Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items

igbt 40A 600V

Abstract: CA75
Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items

igbt 1200V 40A module

Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items

SGL40N150

Contextual Info: IGBT SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150 is designed for the Induction Heating applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A

SGH80N60UF

Contextual Info: IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching

smd diode code T7

Contextual Info: ITH08F06 ITH08F06 High Speed Powerline N-Channel IGBT DS4988-3.0 May 1999 The ITH08F06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage applications such as power supplies and

induction heater

Abstract: FGL40N150D induction heater for heating
Contextual Info: IGBT FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.5 V @ IC = 40A

SGL40N150

Abstract: igbt 40a 600v
Contextual Info: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

fairchild Igbts

Abstract: SGH80N60UF
Contextual Info: SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

induction heater

Abstract: igbt 40A 600V SGL40N150D IGBT 600V 16
Contextual Info: IGBT SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A

Contextual Info: 2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions Unit : mm Application Low frequency amplifier Driver TSMT3 1.0MAX Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)

Contextual Info: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching

SGH80N60UF

Abstract: SGH80N60
Contextual Info: SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

SGF80N60UF

Contextual Info: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching

Contextual Info: 2SD2672 Transistors Low frequency amplifier 2SD2672 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6

2SD2672

Contextual Info: 2SD2672 Transistors Low frequency amplifier 2SD2672 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (4A) 2) VCE(sat) ≦ 250mV At IC = 2A / IB = 40mA 2.9 0.85 0.4 0.7 1.6

SGH80N60UFD

Contextual Info: IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD seriesis designed for the applications such as motor control and general inverters where High Speed Switching

SGL40N150D

Contextual Info: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

SGH80N60UFD

Contextual Info: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

SGH80N60UFD

Contextual Info: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

FGL40N150D

Contextual Info: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A