VP0808 Search Results

Contextual Info: V P 0 80 8 Supertex inc. ^ VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B ^dss ^ Order Number / Package ^DS ON ^O(ON) b v dgs (max) (min) TO-39 TO-92 -80V 5i2 -1.1 A VP0808B VP0808L -100V 5 fi -1.1A

Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5

Contextual Info: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =

vp0300m

Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Contextual Info: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180

VP0808L

Abstract: VP1008L
Contextual Info: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5

VP0808

Contextual Info: Supertex inc. VP0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness mils Back Side Metal 45 45 11 ± 1.5 Au (mils) VP0808 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

sivp

Abstract: VP0808L-G 125OC VP0808
Contextual Info: VP0808 Features ► ► ► ► ► ► ► P-Channel Enhancement-Mode Vertical DMOS FETs General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V

VP2410

Contextual Info: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP100

Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0

VP0808

Contextual Info: , Una. Lf TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV DSS / R DS(ON) BVDGS (max) 'rj(ON) (min) -80V 5.0Q -1.1A Order Number / Package TO-92 VP0808L

VP0808L

Abstract: VP1008L
Contextual Info: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28

Contextual Info: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0808 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: _ VP0808 VP1008 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (O N) BVdgs (max) (min) TO-39 TO-92 -80V 5Q -1.1A VP0808B VP0808L -100V 5Q -1.1A VP1008B VP1008L Advanced DMOS Technology

Contextual Info: Supertex inc. VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

VP0808

Contextual Info: VP0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VP0808 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

sivp

Abstract: VP0808L-G 125OC VP0808
Contextual Info: VP0808 Features ► ► ► ► ► ► ► P-Channel Enhancement-Mode Vertical DMOS FETs General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain

TO-205AD

Abstract: VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100
Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V

VP0808

Abstract: VP0808L
Contextual Info: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -80V 5.0Ω -1.1A VP0808L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VP0808

Abstract: VP0808L
Contextual Info: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -80V 5.0Ω -1.1A VP0808L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VP8080

Contextual Info: V P 0808 in c . VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON ' d(ON) b v dos (max) (min) TO-39 TO-92 -80V 5£i -1.1A VP0808B VP0808L -100V 5£i -1.1A VP1008B VP1008L

vp0808b

Contextual Info: Tem ic VP0808B/L/M, VP1008B/L/M_ Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number I d A rBS(on) Max (Q) VGS(th) (V) 5 @ VGS = - 1 0 V - 2 to -4 .5 -0 .8 8 5 @ V GS = - 1 0 V - 2 to -4 .5 -0 .2 8 VP0808M 5 @ V o s = -10 V