VP24 Search Results

VP2410

Abstract: vP2410B
Contextual Info: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB

Contextual Info: VP2450 VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -500V 30Ω -0.2A VP2450N3 TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VP2450 VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) -500V 30Ω -0.2A Order Number / Package TO-92 TO-243AA* VP2450N3 VP2450N8 * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

0427

Abstract: 2410L VP2410L MMA6
Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

2410L

Abstract: VP2410L
Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

VP242

Abstract: VP242A-36C1 variable phase shifter 200 Mhz
Contextual Info: Surface Mount Voltage Variable Phase Shifter 2400-2500 MHz Package Style 36 VP242A-36C1 Key Features • • • Low Loss - 1.1 dB Phase Shift - 200° Solder Reflow to +240°C Guaranteed Specifications Insertion Loss dB TYP 1.1 MAX 2.0 Phase Shift (deg)

Contextual Info: VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

marking n3

Abstract: sivp fet sot-89 marking code fet sot-89 product marking VP2450 6 PIN case mos fet p-channel
Contextual Info: VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2450 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP2450

Abstract: VP2450N3 VP2450N8 diode sot-89 marking code Vp4E
Contextual Info: VP2450 VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) -500V 30Ω -0.2A Order Number / Package TO-92 TO-243AA* VP2450N3 VP2450N8 * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

VP2450N8

Abstract: VP2450 VP2450N3 VP2450ND Vp4E
Contextual Info: VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die -500V 30Ω -0.2A VP2450N3 VP2450N8 VP2450ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

VP242C-36C1

Contextual Info: Surface Mount Voltage Variable Phase Shifter 2400-2500 MHz Package Style 36 VP242C-36C1 Key Features • • • Low Loss - 0.9 dB Phase Shift - 130° Solder Reflow to +240°C Guaranteed Specifications Insertion Loss dB TYP 0.8 MAX 1.5 Phase Shift (deg)

VP2450N8-G

Abstract: VP2450N8
Contextual Info: VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2450 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP2410

Abstract: VP2410L marking LD VISHAY
Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -2 4 0 fDSIon) Max (Q) VGs<.h)(V) Id (A) 10 e V q s = - 4 .5 V -0 .8 to -2 .5 -0 .1 8 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • High-Side Switching

VP2450

Contextual Info: VP2450 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VP2450 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: 11/04 REV A Surface Mount Voltage Variable Phase Shifter 2400-2500 MHz Package Style 35 VP242A-35TK Key Features • • • Low Loss: 2.0 dB Phase Shift: 220º Solder Reflow to 240°C Guaranteed Specifications Insertion Loss dB TYP 3.0 MAX 3.5 Phase Shift (deg)

Contextual Info: Surface Mount Voltage Variable Phase Shifter 2400 MHz, 10% Bandwidth Package Style 36 VP242D-36N1 Key Features • • • Low Loss - 1.3 dB Phase Shift - 110° Solder Reflow to +240°C Guaranteed Specifications Insertion Loss dB TYP 1.3 MAX 1.8 Phase Shift (deg)

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

B0815

Abstract: vp2410
Contextual Info: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits

Contextual Info: T e m ic VP2410L Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number VP2410L V BR DSS Mi» (V) -240 Features • • • • • High-Side Switching Secondary Breakdow n Free: —255 V Low On-Resistance: 8 CÏ Low-Power/Voltage Driven

VP2410

Contextual Info: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3

Contextual Info: VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die -500V 30Ω -0.2A VP2450N3 VP2450N8 VP2450ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

VP2450

Contextual Info: Supertex inc. VP2450 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VP2450 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description