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    VQB 27 F Search Results

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    VQB 27 F Price and Stock

    Nexperia PESD2CANFD27V-QBZ

    ESD Protection Diodes / TVS Diodes ESD protection for in-vehicle networks
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    Mouser Electronics PESD2CANFD27V-QBZ 4,556
    • 1 $0.46
    • 10 $0.285
    • 100 $0.124
    • 1000 $0.098
    • 10000 $0.053
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    Nexperia PESD2CANFD27VQB-QZ

    ESD Protection Diodes / TVS Diodes ESD protection for in-vehicle networks
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PESD2CANFD27VQB-QZ
    • 1 $0.4
    • 10 $0.245
    • 100 $0.154
    • 1000 $0.092
    • 10000 $0.068
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    VQB 27 F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    wiring VDG 13 relay

    Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


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    MC33121/D MC33121 MC33121 refere12 wiring VDG 13 relay Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121FN MC33121P PDF

    TAG 600

    Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
    Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect


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    PDF

    TL 431 SO8

    Abstract: 2SD203 SD203DC P3NF
    Contextual Info: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R


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    SD200, SD201 SD202, SD203 SD203DC SD202DC SD200DC SD200DC/R SD201DC/R SD202DC/R TL 431 SO8 2SD203 P3NF PDF

    vqb 71

    Abstract: 074I sem 304 SD50G1
    Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package


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    SD5000CHP SD5000J SD500QN SD5000, SD5001, SD5002 SD50CHCHP SD5001J SD5002CH« SD5Q02M vqb 71 074I sem 304 SD50G1 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification


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    BFQ236; BFQ236A OT223 BFQ256 BFQ256A. SCA55 127027/00/02/pp8 PDF

    wiring VDG 13 relay

    Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
    Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface


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    MC33120/D MC33120 MC33120 wiring VDG 13 relay TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN PDF

    motorola TE 901

    Abstract: MK1V135 2N390S MC14404
    Contextual Info: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car­


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    MC3419-1L mF/20V aiF/40 iF/60 MJE271 MJE270 MPSA56 2N3905 1N4007 motorola TE 901 MK1V135 2N390S MC14404 PDF

    D147D

    Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
    Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC


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    C520D D147D C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24 PDF

    2SC394

    Abstract: TRANSISTOR 2SC394 2SC394-0 2SC394-R 100MHZ 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor
    Contextual Info: S/UD>NPNZm«0Bh5:VS>;*5KPCT75iW 2SC 394 1ILIC0N NPN DOUBLE DIFFUSED TRANSISTOR PCT PROCESS o mmwLmmm o High Frequency Amplifier Applications Unit in mm 0 5.8 MAX. 0 4 . 9 5 MAX. o PM Frequency Converter Applications 3E& => ^ * # * * ftzk S w ; ^Q 4 5 # o b = 9 “U


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    2sc394 100MHz) 200MHz j2f58MAX. 95MAJ( 100MHz 2SC394 TRANSISTOR 2SC394 2SC394-0 2SC394-R 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor PDF

    Contextual Info: November 1997 FAIRCHILD SEM ICONDUCTO R PR E LIM IN A R Y m FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


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    FDP6030L FDB6030L PDF

    Contextual Info: UNIVERSAL SEMICONDUCTOR 41E D • T3t.ö341 Q D G O I O S U N IV E R S A L 455 ■ UNV T~3?~OS SD210, SD 211, S D 2 12 SD213, SD 214, S D 215 N-Channel Enhancement-Mode Lateral D-MOS FETs O rd ering Info rm ation O a t* P ro ta o tlv a D loda 1 0 V ,480 20V, 45»


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    SD210, SD213, SD211DE SD2130E SD211DE/R SD213DE/R SD211CHP SD213CHP SD210DE SD212DE PDF

    3SD21

    Abstract: tt 2144 bv ui 302 0220
    Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION


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    O-206AF CTO-72) SD210DE SD210DBR SD211DE SD211DE/R SD211CHP SD212DE SD212DE/R SD212CHP 3SD21 tt 2144 bv ui 302 0220 PDF

    2N6715

    Abstract: 2N6714 2N6726 92GU01
    Contextual Info: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.


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    2N6726, 27/92GU51, 92GU01 2N6714 O-237 2N6714 2N6715 2N6726 PDF

    E720BXF

    Abstract: EDGE720 E720BXF EDGE Edge710 EVM720BXF
    Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load HIGH-PERFORMANCE PRODUCTS – ATE Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range


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    Edge720 Edge720 E720BXF EVM720BXF E720BXF E720BXF EDGE Edge710 EVM720BXF PDF

    DIODE FS 607

    Abstract: marking j9 sot-23 sot-23 package marking J9 TSM2312CX TSM2312 1Q1 SOT 6u sot-23
    Contextual Info: s TAIWAN pb RoHS TSM2312 S E M IC O N D U C T O R 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SOT-23 3 P in D e fin itio n : V ds (V) 1. Gate 2. Source 3. Drain 20 1 2 Features RDS(on)(mÛ) Id (A) 33 @ Vgs= 4 .5V 4.9 4Û @ Vos = 2.5V 4.4 51 @ V g »= 1.8V


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    TSM2312 OT-23 TSM2312CX OT-23 DIODE FS 607 marking j9 sot-23 sot-23 package marking J9 TSM2312 1Q1 SOT 6u sot-23 PDF

    10ID

    Abstract: 2SC2995 P100 R6P-F
    Contextual Info: 2SC2995 TO SH IBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2995 Unit in mm FM /A M RF, MIX, OSC, IF HIGH FREQUENCY A M PLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM/AM RF, MIX, OSC and IF.


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    2SC2995 55MAX. 10ID 2SC2995 P100 R6P-F PDF

    Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable


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    Edge720 com60 PDF

    motorola 9100-11

    Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
    Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC


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    MC33120/D MC33120 motorola 9100-11 Battery Managements MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21 PDF

    Contextual Info: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and


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    AWT919D T919D kZ25H3 06/07/98-AWT919d PDF

    Contextual Info: October 1997 FAIRCHILD M lC O N D U C T O R FDC6320C Dual N & P Channel, Digital FET General Description Features T h e s e dual N & P C hannel logic level en hancem ent m ode field e ffe c tra nsistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This v e ry high de nsity


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    FDC6320C PDF

    Contextual Info: Æ T S G S -1H 0M S 0N D lsi S IILICTIs! iD©S VNP10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP10N06 . . . . . . . . . . V clamp 60 V RDS(on) 0 .3 a. 11im 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP


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    VNP10N06 O-220 VNP10N06 PDF

    9952a

    Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTOR NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


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    NDS9952A 9952a PDF

    Contextual Info: E m m AWT919D TX POWER MMIC a c s ' Your GaAs IC Source A d va n ce d P ro d u ct ln fo r 1™ 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: V D IJ k YD2JL The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both


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    AWT919D T919D Q0000409CW4H40000MQ 04CHKCW 06/07/98-AWT919d PDF

    Edge710

    Abstract: E720BXF Edge4707B EVM720BXF
    Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable


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    Edge720 Edge720 Edge710 E720BXF Edge4707B EVM720BXF PDF