VQE 208 E Search Results
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VQE 208 E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRGDDN600K06
Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
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IRGDDN600K06 1RGRDN600K06 C-1016 mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e | |
BG558
Abstract: bc548 TO-92 BC558 pin bc558 pnp transistors BC548
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BC556 BC558 BC546 BC548) MIL-STD-202, BC557 BC558 BG558 bc548 TO-92 BC558 pin bc558 pnp transistors BC548 | |
Contextual Info: ¡2 htftiSSff HGTA32N60E2 32A, 600V N*Ch3nn6l IGBT December 1993 Features Package • 32 Am p, 600 Volt JEDEC M0-093AA 5LEAD TO-218 • Latch Free Operation • Typical Fall T im e 620ns 5 5 EMITTER > 4 EMITTER KELVIN 3 3 COLLECTOR > 2 NO CONNECTION > 1 GATE |
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HGTA32N60E2 M0-093AA O-218) 620ns | |
Contextual Info: H AR Fas HGTG34N100E2 December 1993 34A, 1000V N-Channel IGBT Package Features • JEDEC STYLE TO-247 TOP VIE N 34 Amp 1000 Volt • Latch Free Operation 3 FMITTFR • Typical Fall T im e-710ns • COLLECTOR BOTTOM SIDE METAL I , High Input Impedance |
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HGTG34N100E2 O-247 e-710ns | |
r2f transistor
Abstract: R2F SOT-23 MMBT2222A MMBT2907A
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MMBT2907A MMBT2222A) OT-23, MIL-STD-202, OT-23 MMBT2907A -500mA, -50mA 150mA, 500mA, r2f transistor R2F SOT-23 MMBT2222A | |
Contextual Info: HA RR IS S E M I C O N D S E C T O R 3 K Ä S LflE D • M3 DS S7 1 0 D S 0 E 3 3 107 « H A S HGTA32N60E2 32A, 600V N-Channel IGBT December 1993 Package Features JEDEC MO-093AA 5 LEAD TO-218) TOP VIEW • 32 Amp, 600 Volt • Latch Free Operation • Typical Fall Time 620ns |
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HGTA32N60E2 MO-093AA O-218) 620ns | |
siemens igbt BSM 50 gb 100 d
Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb C160 C67076-A2100-A2 DD45 diode wss bsm siemens GGM5 C67076-A2002-A2
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C67076-A2100-A2 C67076-A2002-A2 fl235bOS siemens igbt BSM 50 gb 100 d siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb C160 DD45 diode wss bsm siemens GGM5 C67076-A2002-A2 | |
Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z |
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GA150TD120U | |
VQE 22 led
Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
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RS481A CD207 MOCD208 VQE 22 led transistor sec 623 transistor sec 621 MOCD208 transistor D207 | |
30N120D2
Abstract: HGTG30N120D2 U 665
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HGTG30N120D2 O-247 580ns 120D2* 30N120D2 HGTG30N120D2 U 665 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is |
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TCJ-220 MGP14NG0E | |
Contextual Info: HARRIS SEMICOND SECTOR U bflE » ^1302271 OGSOSMl 233 « H A S HGTG34N100E2 34A, 1000V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP V IB V • 34 Am p 1000 Volt • Latch Free Operation I • Typical Fall T im e - 710ns COLLECTOR |
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HGTG34N100E2 O-247 710ns HGTG34N100E2* | |
Contextual Info: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation |
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10kHz | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode M GY20N120D Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 20 A @ 90°C 28 A @ 25 C 1200 VOLTS |
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O-264 0E-05 0E-01 | |
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
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Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450 | |
Contextual Info: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns |
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HGTG30N120D2 O-247 580ns 30N120D2* | |
Contextual Info: PRELIMINARY MMST2222A VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR / U T E M ir I p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Complementary PN P Type Available MMST2907A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW |
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MMST2222A MMST2907A) OT-323 OT-323, MIL-STD-202, 100MHz 100mA, 150mA, DS30080 | |
IRGDDN600M06
Abstract: power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit
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IRGDDN600M06 IRGRDN600M06 Outline13 C-456 SS452 power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit | |
Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode |
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MG300J1US51 2-70v MG300J1US51 | |
bsm 25 op 120
Abstract: BSM 204-A
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C67076-A2506-A17 bsm 25 op 120 BSM 204-A | |
Contextual Info: CM400HA-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SÍDQI& IGBTMOD H-Series Module 400 Amperes/1400 Volts Description: Powerex IG B TM O D ™ Modules are designed for use in switching applications. Each module consists |
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CM400HA-28H Amperes/1400 135ns) 20-25kH 72T4b21 | |
LB 124 transistor
Abstract: transistor 45 f 123 BU2506DF
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BU2506DF LB 124 transistor transistor 45 f 123 BU2506DF | |
G30N60
Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
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HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC | |
k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
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