VQE 208 E Search Results

IRGDDN600K06

Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Contextual Info: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses

BG558

Abstract: bc548 TO-92 BC558 pin bc558 pnp transistors BC548
Contextual Info: BC556 - BC558 VISHAY PNP EPITAXIAL PLANAR TRANSISTORS lu T E M îï I POWER SEHCONDVCTOR/ Features • • • Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548) TO-92

Contextual Info: ¡2 htftiSSff HGTA32N60E2 32A, 600V N*Ch3nn6l IGBT December 1993 Features Package • 32 Am p, 600 Volt JEDEC M0-093AA 5LEAD TO-218 • Latch Free Operation • Typical Fall T im e 620ns 5 5 EMITTER > 4 EMITTER KELVIN 3 3 COLLECTOR > 2 NO CONNECTION > 1 GATE

Contextual Info: H AR Fas HGTG34N100E2 December 1993 34A, 1000V N-Channel IGBT Package Features • JEDEC STYLE TO-247 TOP VIE N 34 Amp 1000 Volt • Latch Free Operation 3 FMITTFR • Typical Fall T im e-710ns • COLLECTOR BOTTOM SIDE METAL I , High Input Impedance

r2f transistor

Abstract: R2F SOT-23 MMBT2222A MMBT2907A
Contextual Info: íH A N SYS MMBT2907A ELECTRONICS LIMITED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fc l TOP VIEW Mechanical Data_

Contextual Info: HA RR IS S E M I C O N D S E C T O R 3 K Ä S LflE D • M3 DS S7 1 0 D S 0 E 3 3 107 « H A S HGTA32N60E2 32A, 600V N-Channel IGBT December 1993 Package Features JEDEC MO-093AA 5 LEAD TO-218) TOP VIEW • 32 Amp, 600 Volt • Latch Free Operation • Typical Fall Time 620ns

siemens igbt BSM 50 gb 100 d

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb C160 C67076-A2100-A2 DD45 diode wss bsm siemens GGM5 C67076-A2002-A2
Contextual Info: bOE D • 8 2 3 5 b D 5 Q D L*Sfi4D S4b « S I E G SIEMENS s i e „ e n s A K T I E NGESELLSCHAF IGBT Module BSM 50 GB 100 D BSM 50 GAL 100 D Preliminary Data V CE = 1000 V / C = 2 x 70 A at T c = 25 C / c = 2 x 50 A at T c = 80 C • • • • • Power m odule

Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z

VQE 22 led

Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface

30N120D2

Abstract: HGTG30N120D2 U 665
Contextual Info: HGTG30N120D2 30A, 1200V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 30 Am p 1200 Volt • Latch Free Operation ^FMITTFH • Typical Fall T im e - 580ns COLLECTOR BOTTOM SIDE METAL I • High Input Im pedance • Low C onduction Loss

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is

Contextual Info: HARRIS SEMICOND SECTOR U bflE » ^1302271 OGSOSMl 233 « H A S HGTG34N100E2 34A, 1000V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP V IB V • 34 Am p 1000 Volt • Latch Free Operation I • Typical Fall T im e - 710ns COLLECTOR

Contextual Info: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode M GY20N120D Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 20 A @ 90°C 28 A @ 25 C 1200 VOLTS

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

Contextual Info: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns

Contextual Info: PRELIMINARY MMST2222A VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR / U T E M ir I p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Complementary PN P Type Available MMST2907A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW

IRGDDN600M06

Abstract: power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit
Contextual Info: International S Rectifier Provisional Data Sheet P D -9 .1176 IRGDDN600M06 IRGRDN600MQ6 "SINGLE SWITCH" IGBT DOUBLE -A-PAK Low conduction loss IGBT IR G D D . IR G R D . ? • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

bsm 25 op 120

Abstract: BSM 204-A
Contextual Info: SIEMENS BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 35 GD 120 D2 1200V 50A 'c Package Ordering Code SIXPACK 1 C67076-A2506-A17

Contextual Info: CM400HA-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SÍDQI& IGBTMOD H-Series Module 400 Amperes/1400 Volts Description: Powerex IG B TM O D ™ Modules are designed for use in switching applications. Each module consists

LB 124 transistor

Abstract: transistor 45 f 123 BU2506DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

G30N60

Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
Contextual Info: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d