VQE 23 Search Results

5842s

Abstract: 5841A
Contextual Info: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c879 transistor

Contextual Info: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

A0937

Abstract: 1N4532 at-614 1N3600 1N4148-1 JANTXV 1N4148UR-1 1N4148-1 1N4148-1 JAN 1N4531UR JANTX 1N4148-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER DSCC-VQ VQE-1 o-019452/Mr. December 18, 2009 Deslich/614-692-0593/bpd TO SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

IRGBC36

Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Contextual Info: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00

Contextual Info: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)

TRANSISTOR C307

Abstract: transistor c308
Contextual Info: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

2Sa1491 SANKEN

Contextual Info: POWER TRANSISTORS i iifi PNP POWER TRANSISTORS Absolute M axim um Ratings Type No. Electrical Characteristics at TA = 25°C Pc VcBO VcEO V ebo Ic 3 ICB0 I eso ^ [BP. CEO hFE VcE tat) <W) (V) (V) (V) (A) (A) Max @ VCB Max @ V fB Min @ lc Min @ lç @ Vqe Max. @ lc @ lB

marking code sot-23 697

Abstract: marking code sot23 697
Contextual Info: SIEMENS BCR 169 PNP S ilicon D igital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1 = 4.7kiî F L nr W Type Marking Ordering Code Pin C onfiguration BCR 169 WSs 1=B Q62702-C2340 Package 2=E 3=C SOT-23

GSI550

Abstract: IGT7E50CS
Contextual Info: Preview Products G SI550, IGT7E50CS File N um b er 2328 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 50 A, 500 V rDs on = 0.052 fi TERMINAL DIAGRAM Features: • ■ ■ ■ ■ Lo w Vce(sat) - 1 . 5 V typ. @ 50 A U ltra -fa st tu rn -o n - 200 n s ty p ic a l

L-3019

Abstract: c4630 BUP 303 IGBT
Contextual Info: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VcE BUP 306D 1200V 23A h Pin 3 C E Package Ordering Code

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

transistor iqr

Contextual Info: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V

15QQ

Abstract: T0320 iCR 406 J
Contextual Info: International ZQR Rectifier PD 9.1601 IRG4BC20FD PREUMINART INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,

WE VQE 24 E

Abstract: WE VQE 11 E WE VQE 24
Contextual Info: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V

Contextual Info: KST4125 PNP EPITAXIAL SILICON TRANSISTOR G ENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic S ym bol C ollector-Base Voltage C ollecto r-E m itte r Voltage Em itter-Base Voltage C ollector C urrent C o llecto r Dissipation

TRANSISTOR 2FE

Contextual Info: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

c845

Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz