VRRM 10 Search Results

BY299

Abstract: BY296 BY297 BY298
Contextual Info: BY296 THRU BY299 FAST SILICON RECTIFIERS Features • Low forward voltage • High current capability • Low leakage current • High surge capability • Low cost Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VRRM VRRM VRRM VRRM 100 200 400 800

BY299

Abstract: Fast Silicon Rectifiers BY296 BY297 BY298
Contextual Info: BY296 THRU BY299 FAST SILICON RECTIFIERS Features • Low forward voltage • High current capability • Low leakage current • High surge capability • Low cost Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VRRM VRRM VRRM VRRM 100 200 400 800

BY296

Abstract: BY297 BY298 BY299
Contextual Info: BY296 THRU BY299 FAST SILICON RECTIFIERS Features • Low forward voltage • High current capability • Low leakage current • High surge capability • Low cost Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VRRM VRRM VRRM VRRM 100 200 400 800

BY251

Abstract: BY252 BY253 BY254 BY255
Contextual Info: BY251 THRU BY255 PLASTIC SILICON RECTIFIERS Features • Low forward voltage • High current capability • Low leakage current • High surge capability • Low cost Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VRRM VRRM VRRM VRRM VRRM 200 400

BY255

Abstract: BY251 BY252 BY253 diode BY255 BY254
Contextual Info: BY251 THRU BY255 PLASTIC SILICON RECTIFIERS Features • Low forward voltage • High current capability • Low leakage current • High surge capability • Low cost Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VRRM VRRM VRRM VRRM VRRM 200 400

BY255

Abstract: BY252 BY251 BY253 BY254 by251.255
Contextual Info: BY251 THRU BY255 PLASTIC SILICON RECTIFIERS Features • Low forward voltage • High current capability • Low leakage current • High surge capability • Low cost Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VRRM VRRM VRRM VRRM VRRM 200 400

Contextual Info: BAV17.BAV21 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Order Instruction Type Type Differentiation BAV17 VRRM = 25 V BAV18 VRRM = 60 V BAV19 VRRM = 120 V BAV20 VRRM = 200 V BAV21 VRRM = 250 V

atj 15

Abstract: BAV21-TR BAV17 BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV17.BAV21 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Order Instruction Type Type Differentiation BAV17 VRRM = 25 V BAV18 VRRM = 60 V BAV19 VRRM = 120 V BAV20 VRRM = 200 V BAV21 VRRM = 250 V

BAV103-GS08

Abstract: BAV100 BAV101 BAV102 BAV103
Contextual Info: BAV100.BAV103 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Order Instruction Type BAV100 BAV101 BAV102 BAV103 Type Differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V

BAV203-GS08

Abstract: BAV202-GS08 BAV200 BAV201 BAV202 BAV203
Contextual Info: BAV200.BAV203 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diodes Applications 96 12009 General purposes Order Instruction Type BAV200 BAV201 BAV202 BAV203 Type Differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V

BAV17

Abstract: BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV17.BAV21 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Order Instruction Type Type Differentiation BAV17 VRRM = 25 V BAV18 VRRM = 60 V BAV19 VRRM = 120 V BAV20 VRRM = 200 V BAV21

Contextual Info: BAV100.BAV103 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Order Instruction Type BAV100 BAV101 BAV102 BAV103 Type Differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering Code

BAV200

Abstract: BAV201 BAV202 BAV203
Contextual Info: BAV200.BAV203 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diodes Applications 96 12009 General purposes Order Instruction Type BAV200 BAV201 BAV202 BAV203 Type Differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering Code

BAV203-GS08

Abstract: BAV200 BAV201 BAV202 BAV203
Contextual Info: BAV200.BAV203 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diodes Applications 96 12009 General purposes Order Instruction Type BAV200 BAV201 BAV202 BAV203 Type Differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering Code

USR Semiconductor

Abstract: 2D150 KA DIODE MDQ150
Contextual Info: USR Semiconductor Co., Ltd DIODE MODULE 2D150 SYMBOL CHARACTERISTIC TEST CONDITIONS Tj °C DC output current Single-phase full wave rectifying circuit, TC=100°C 150 VRRM Repetitive peak reverse voltage VRRM tp=10ms VRsM= VDRM&VRRM+200V 150 IRRM Repetitive peak current

Contextual Info: DSEE8-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 25 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM VRRM V V 600 300 Type ISOPLUS220TM 1 DSEE8-06CC 1 2 2 3 3 Isolated back surface * Symbol Conditions

BY214-200

Abstract: BYT11-1000 BY214 BY233-400 E81734 BYT11-600 VRRM 600 IO 20 VRRM 800, IFSM 300 VRRM 600, IFSM 300 ISOWATT220AC
Contextual Info: POWER RECTIFIERS FAST RECOVERY & GENERAL PURPOSE RECTIFIERS F126 DO-201AD AG TO220AC ISOWATT220AC TO220AC isolated ISOTOP TM TJ (max) =150°C IO VRRM IR @ rated VRRM (mA) tRR IFSM (V) VF @ rated VRRM (V) (A) (ns) (A) PLQ08 PLQ1 BYT11-600 BYT11-800 BYT11-1000

Contextual Info: FST8320SM thru FST8340SM Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 80 A Features • High Surge Capability • Types from 20 V to 40V VRRM D61-3SM Package • Types up to 100V VRRM Maximum ratings, at Tj = 25 °C, unless otherwise specified Conditions

E72873

Abstract: 121-16NO1 ir 2110 VUO 121-16 NO1
Contextual Info: VUO 121-16NO1 IdAVM = 118 A VRRM = 1600 V Three Phase Rectifier Bridge Preliminary data 13 16 VRRM V Type 1600 VUO 121-16 NO1 1-4 5-8 9-12 14 17 Symbol Test Conditions VRRM IdAVM TC = 100°C, sinusoidal 120° E72873 See outline drawing for pin arrangement

Contextual Info: B320A - B360A Green 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary Features B320A-B340A: VRRM V IO(A) 20, 30, 40 3.0 VF(MAX) @ 3A (V) 0.50 IR(MAX) @ VRRM (mA) 0.5 B350-B360A: VRRM (V) IO(A) VF(typ) @ 125°C (V) 50, 60 3.0 0.70 IR(MAX) @ VRRM

Contextual Info: DGS 10-022A DGS 10-025A DGSK 20-022A DGSK 20-025A IDC = 9A VRRM = 220/250 V trr = 13 ns Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V Type 220 250 220 250 DGS 10-022A DGS 10-025A VRSM VRRM Type V V 220 250 220 250 A TO-220 AC C A C TAB

VUO 121-16 NO1

Contextual Info: Advanced Technical Information VUO 121-16NO1 IdAVM = 118 A VRRM = 1600 V Three Phase Rectifier Bridge 13 16 VRRM V Type 1600 VUO 121-16 NO1 1-4 5-8 9-12 14 17 Symbol Test Conditions VRRM IdAVM TC = 100°C, sinusoidal 120° Features Maximum Ratings IFSM TVJ = 45°C, t = 10 ms, VR = 0 V

Contextual Info: VUO 120 VUO 155 IdAVM = 121/157 A VRRM = 1200-1600 V Three Phase Rectifier Bridge Preliminary Data VRRM Type W5 V 1200 VUO 120-12 NO1 1600 VUO 120-16 NO1 1200 VUO 155-12 NO1 1600 VUO 155-16 NO1 A6 E6 K6 Therm. V M1/O1 VRRM Type option W6 M10/O10 VRRM IdAVM

vub 70 -16

Abstract: vub 70 145-16NO1 s2mg tftF0
Contextual Info: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 10+11 12 Type 13 19+20 V 1600 1600 VUB 116-16 NO1 VUB 145-16 NO1 1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes