K34 mosfet
Abstract: sot23 w32 ISL62882c vss 1558 rPGA-989 AN1558 ag30 transistor ONSEMI diode a30 transistor r14 ah16 socket am2 am3
Text: Application Note 1558 Author: Jia Wei ISL62882CEVAL2Z User Guide Introduction Interface Connections The ISL62882CEVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62882 features Intersil's
|
Original
|
PDF
|
ISL62882CEVAL2Z
ISL62882
AN1558
K34 mosfet
sot23 w32
ISL62882c
vss 1558
rPGA-989
ag30 transistor
ONSEMI diode a30
transistor r14 ah16
socket am2 am3
|
PC2-4200
Abstract: AC871 64mx16 PC2-6400
Text: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400 PC2-6400 -37B -3C -AD
|
Original
|
PDF
|
NT1GT64UH8C0FN
NT2GT64U8HC0BN
PC2-4200
PC2-5300
PC2-6400
DDR2-533/667/800
64Mx16
/128Mx8
AC871
64mx16
|
DDR3-1333 DIMM Spec
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33D5663A-K0/K9/F8M REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC REGISTERED DIMM 240-PIN Description The VL33D5663A is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of
|
Original
|
PDF
|
VL33D5663A-K0/K9/F8M
256Mx72
240-PIN
VL33D5663A
128Mx8
28-bit
240-pin
240-pin,
DDR3-1333 DIMM Spec
|
FLD5F10NP
Abstract: 2296 VSC7989CD
Text: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules
|
Original
|
PDF
|
VSC7989
488Gb/s,
952Gb/s,
OC-192
G52356,
FLD5F10NP
2296
VSC7989CD
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33D5663A-K0/K9/F8M REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC REGISTERED DIMM 240-PIN Description The VL33D5663A is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of
|
Original
|
PDF
|
VL33D5663A-K0/K9/F8M
256Mx72
240-PIN
VL33D5663A
128Mx8
28-bit
240-pin
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL53B5269E-K9S/F8S/E7S REV: 1.0 General Information 4GB 512M x 72 DDR3 SDRAM VLP ECC Mini-RDIMM 244-PIN Description The VL53B5269E is a 512M x 72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of nine stacked CMOS 512M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
|
Original
|
PDF
|
VL53B5269E-K9S/F8S/E7S
244-PIN
VL53B5269E
28-bit
244-pin
VN-240909
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B5263F-K9S/F8S/E7S REV: 1.1 General Information 4GB 512M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5263F is a 512M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock
|
Original
|
PDF
|
VL33B5263F-K9S/F8S/E7S
240-PIN
VL33B5263F
28-bit
240-pin
VN-110909
|
240-PIN
Abstract: DDR3-1066 DDR3-1333 PC3-10600 rdimm thermal samsung samsung DDR3 SDRAM 2GB
Text: Product Specifications PART NO.: VL33B5263F-K9S/F8S/E7S REV: 1.1 General Information 4GB 512M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5263F is a 512M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock
|
Original
|
PDF
|
VL33B5263F-K9S/F8S/E7S
240-PIN
VL33B5263F
28-bit
240-pin
240-pin,
VN-110909
DDR3-1066
DDR3-1333
PC3-10600
rdimm thermal samsung
samsung DDR3 SDRAM 2GB
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
|
Original
|
PDF
|
VL53B5263A-K9S-F8S-E7S
512MX72
VL53B5263A
256Mx8
28-bit
244-pin
244-pin,
|
DDR3-1066
Abstract: DDR3-1333 PC3-10600 A6211
Text: Product Specifications PART NO.: VL53B5269E-K9S/F8S/E7S REV: 1.0 General Information 4GB 512M x 72 DDR3 SDRAM VLP ECC Mini-RDIMM 244-PIN Description The VL53B5269E is a 512M x 72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of nine stacked CMOS 512M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
|
Original
|
PDF
|
VL53B5269E-K9S/F8S/E7S
244-PIN
VL53B5269E
28-bit
244-pin
VN-240909
DDR3-1066
DDR3-1333
PC3-10600
A6211
|
DDR3-1066
Abstract: DDR3-1333 PC3-10600 A0222 VL53B5263A-K9S-F8S-E7S A6211
Text: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
|
Original
|
PDF
|
VL53B5263A-K9S-F8S-E7S
512MX72
VL53B5263A
256Mx8
28-bit
244-pin
A10/AP
A12/BC#
DDR3-1066
DDR3-1333
PC3-10600
A0222
VL53B5263A-K9S-F8S-E7S
A6211
|
vs-s1558
Abstract: vss 1558 electroabsorption modulator laser diode 10ghz modulator driver Laser Diode 808 2 pin 1000 mw VSC7991 electroabsorption modulator 2296
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 30ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
|
Original
|
PDF
|
VSC7991
VSC7991
G52321-0,
vs-s1558
vss 1558
electroabsorption modulator laser diode
10ghz modulator driver
Laser Diode 808 2 pin 1000 mw
electroabsorption modulator
2296
|
vss 1558
Abstract: NLK3581SSI vs-s1558 PRBS23 VSC7991 VSC7991CD VSC7991CD-01 VSC7991-W electroabsorption modulator laser diode
Text: VSC7991 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Maximum Rise/Fall Times of 38ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules
|
Original
|
PDF
|
VSC7991
488Gb/s,
952Gb/s,
OC-192
VSC7991
G52321,
vss 1558
NLK3581SSI
vs-s1558
PRBS23
VSC7991CD
VSC7991CD-01
VSC7991-W
electroabsorption modulator laser diode
|
electroabsorption modulator
Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
|
Original
|
PDF
|
VSC7989
VSC7989
G52356,
electroabsorption modulator
electroabsorption modulator laser diode
electroabsorption
741 metal package
Electro-absorption modulator
|
|
|
vs-s1558
Abstract: electroabsorption modulator laser diode Laser Diode 808 2 pin 1000 mw CD 741 Electroabsorption modulator VSC7991 EAM laser vss1558 VMOD 741 metal package
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Maximum Rise/Fall Times of 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
|
Original
|
PDF
|
VSC7991
VSC7991
G52321-0,
vs-s1558
electroabsorption modulator laser diode
Laser Diode 808 2 pin 1000 mw
CD 741
Electroabsorption modulator
EAM laser
vss1558
VMOD
741 metal package
|
vs-s1558
Abstract: vss 1558 VSC7989-W FLD5F10NP PRBS23 VSC7989CD
Text: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules
|
Original
|
PDF
|
VSC7989
488Gb/s,
952Gb/s,
OC-192
VSC7989
G52356,
vs-s1558
vss 1558
VSC7989-W
FLD5F10NP
PRBS23
VSC7989CD
|
Untitled
Abstract: No abstract text available
Text: VSC7989 Data Sheet FEATURES ● ● ● ● ● ● ● ● APPLICATIONS Rise and fall times less than 35 ps High-speed operation up to 10.7 Gbps NRZ data Differential inputs Single-supply operation CML-compatible data inputs On-chip 50 Ω input terminations
|
Original
|
PDF
|
VSC7989
OC-192
VSC7989
G52356
|
K4B1G0846G-BY
Abstract: No abstract text available
Text: Rev. 1.1, Aug. 2011 M393B2873GB0 M393B5673GB0 M393B5670GB0 M393B5173GB0 M393B5170GB0 240pin Registered DIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
|
Original
|
PDF
|
M393B2873GB0
M393B5673GB0
M393B5670GB0
M393B5173GB0
M393B5170GB0
240pin
78FBGA
K4B1G0846G-BY*
K4B1G0846G-BY
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.1, Aug. 2011 M393B2873GB0 M393B5673GB0 M393B5670GB0 M393B5173GB0 M393B5170GB0 240pin Registered DIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
|
Original
|
PDF
|
M393B2873GB0
M393B5673GB0
M393B5670GB0
M393B5173GB0
M393B5170GB0
240pin
78FBGA
M393B5173GB0
K4B1G0846G-BY*
|
4GB 512MX64 DDR3 SDRAM MODULE
Abstract: nanya 4GB udimm ddr3
Text: NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency
|
Original
|
PDF
|
NT1GC64BH4B0PF
NT2GC64B88B0NF
NT4GC64B8HB0NF
PC3-8500
PC3-10600
DDR3-1066/1333
128Mx16
256Mx8
4GB 512MX64 DDR3 SDRAM MODULE
nanya 4GB udimm ddr3
|
NT4GC64B8HG0
Abstract: NT4GC64B8HG0NF-DI NT2GC64B88G0NF NT2GC64B88G0NF-CG NT4GC64B8HG0NF-CG NT4GC64B8HG0NF NT2GC64B88G0NF-DI
Text: NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M x 64 / 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: Speed Sort PC3-10600 PC3-12800 -CG -DI Unit DIMM CAS Latency 9 11 fck – Clock Freqency
|
Original
|
PDF
|
NT2GC64B88G0NF
NT4GC64B8HG0NF
PC3-10600
PC3-12800
DDR3-1333/1600
256Mx8
240-Pin
256Mx64
NT4GC64B8HG0
NT4GC64B8HG0NF-DI
NT2GC64B88G0NF-CG
NT4GC64B8HG0NF-CG
NT2GC64B88G0NF-DI
|
NT4GC64B8HG0NF-CG
Abstract: NT2GC64B88G0NF-DI
Text: NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M x 64 / 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: Speed Sort PC3-10600 PC3-12800 -CG -DI Unit DIMM CAS Latency 9 11 fck – Clock Freqency
|
Original
|
PDF
|
NT2GC64B88G0NF
NT4GC64B8HG0NF
PC3-10600
PC3-12800
DDR3-1333/1600
256Mx8
240-Pin
256Mx64
NT4GC64B8HG0NF-CG
NT2GC64B88G0NF-DI
|
Untitled
Abstract: No abstract text available
Text: M2F2G64CB88G7N / M2F4G64CB8HG5N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: PC3-10600 PC3-12800 -CG -DI DIMM CAS Latency 9 11 fck – Clock Freqency 667
|
Original
|
PDF
|
M2F2G64CB88G7N
M2F4G64CB8HG5N
PC3-10600
PC3-12800
DDR3-1333/1600
256Mx8
PC3-10600
240-Pin
256Mx64
|
pin configuration ic 7410
Abstract: No abstract text available
Text: ◆CMOS Low Power Consumption ◆Low Operating Supply Voltage : 2.3V MIN. ◆Output Frequency : 32.768kHz ◆Oscillation Frequency : 2MHz~36MHz (Fundamental) ◆Built-in Divider Circuit : Selectable from Divisions of 1024, 512, 256, 128 ◆Output : 3-State
|
Original
|
PDF
|
768kHz
36MHz
OT-26
XC25BS6
f0/1024,
f0/512,
f0/256,
f0/128.
XC25BS6xxxxx
16MHz,
pin configuration ic 7410
|
