VTE3324LA Search Results

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

PerkinElmer Optoelectronics

Abstract: VTE3322LAH VTE3324LAH
Contextual Info: GaAs Infrared Emitting Diodes VTE3322LAH, 24LAH Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.

VTE1013

Abstract: VTE1113 VTE3322LA VTE3324LA opto127
Contextual Info: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher

Contextual Info: GaAs Infrared Emitting Diodes VTE3322LAH, 24LAH Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.

VTE3322LA

Abstract: VTE3324LA Vactec 21
Contextual Info: SbE D 303DL0^ 000120fi 12S G aAs Infrared Emitting Diodes IVCT V TE3322LA, 24LA Long T-1 Plastic Package — 940 nm E G & G VACTEC PACKAGE DIMENSIONS inch mm .2 2 ( S .6 ) 1 6 0 (4 .0 6 ) • 205 ( 5 . 2 1 ) .1 9 5 ( 4 .9 5 ) | Plastic contour not controfed in region

VTE1063

Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Contextual Info: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters

Contextual Info: SbE D 3D3QbOR GQ012GÔ GaAs Infrared Emitting Diodes « V C T VTE3322LA, 24LA Long T-1 Plastic Package — 940 nm E 155 & G VACTEC G PACKAGE DIMENSIONS inch mm .0 2 3 (0 58) SQ.0 1 7 (0 .4 3 ) .2 2 (S .6) .0 6 (1 .5 ) I .1 6 0 ( 4 .0 6 ) .1 4 0 (3 .5 6 )

VTE3324LA

Abstract: VTE3322LA
Contextual Info: GaAs Infrared Emitting Diodes VTE3322LA, 24LA Long T-1 Plastic Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP SIZE: .011" X .011" DESCRIPTION This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.