VTE3374LA Search Results

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small

VTE3372LAH

Contextual Info: GaAlAs Infrared Emitting Diodes VTE3372LAH, 74LAH Long T-1 3 mm Plastic Package — 880 n PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small

VTE3372LA

Abstract: VTE3374LA
Contextual Info: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small

Contextual Info: SbE D • BGBGbD^ 00D1222 STS GaAIAs Infrared Emitting Diodes VTE 337 2LA, 74LA Long T-1 Plastic Package — 880 nm E H V C T G & G VACTEC - T-HM3 . PACKAGE DIMENSIONS inch mm .2 2 .0 6 ( 5 .6 ) ( 1 .5 ) ( 0 .5 8 ) „ ( 0 .4 3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

DDD1222

Abstract: VTE3372LA VTE3374LA
Contextual Info: SbE D 303DbDT DDD1222 STS GaAIAs Infrared Emitting Diodes VCT VTE3372LA, 74LA Long T-1 Plastic Package — 880 nm E 6 & 6 VACTEC - T-H» - I 3 h PACKAGE DIMENSIONS inch mm .2 2 .0 6 (5 .6 ) ( 1 .5 ) ( 0 .5 *) ( 0 . 4 -3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7 .1 2 6

VTE1063

Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Contextual Info: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters

VTE1291-2

Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher