W 07 SOT23 Search Results
W 07 SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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W 07 SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BFR31
Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
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OCR Scan |
BFR30LT1 BFR31LT1 BFR30LT1 BFR31LT1 OT-23 O-236AB) 2N545> BFR30 BFR31 BFR30 BFR31 2N5457 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET | |
Contextual Info: M AXIM UM RATINGS Symbol Value Unit Co ntinuo us R everse Voltage Rating VR 70 Vdc Peak Forw ard Current 'f 100 m Adc Symbol Max Unit Pd 225 mW 1.8 m W 'X r «j a 556 cc w pd 300 mW 2.4 m W ;C r «j a 417 cw Tj- Tstq - 5 5 to +150 C BAL99LT1* CASE 318-07, STYLE 18 |
OCR Scan |
BAL99LT1* OT-23 O-236AB) 150JC) | |
transistor 2N5457
Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
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OCR Scan |
MMBF5459LT1* OT-23 O-236AB) 2N5457 MMBF5459LT1 transistor 2N5457 jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457 | |
Contextual Info: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value VDG 25 Unit V v GS(rl - 25 V Symbol Max Unit PD 225 mW 1.8 m W /T Röja 556 °C/W TJ« Tstfl - 55 to +150 X G aie V THERMAL CHARACTERISTICS |
OCR Scan |
MMBFJ177LT1* OT-23 O-236AB) MMBFJ175LT1 | |
MMBF4856LT1
Abstract: MMBF4856
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OCR Scan |
MMBF4856LT1* OT-23 O-236AB) MMBF4856LT1 MPF4391 MMBF4856LT1 MMBF4856 | |
bfj310
Abstract: marking HO SOT23
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OCR Scan |
MMBF1309LT1* MMBFJ310LT1* OT-23 O-236AB) MMBFJ309LT1 MMBFJ310LT1 OT-23 bfj310 marking HO SOT23 | |
BAL99LT1Contextual Info: M A XIM U M RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R«j a 556 °C/W PO 300 mW 2.4 mW/°C 9JA 417 °C/W - 5 5 to +150 °C Continuous Reverse Voltage Peak Forward Current BAL99LT1* CASE 318-07, STYLE 18 SOT-23 TO-236AB |
OCR Scan |
BAL99LT1* OT-23 O-236AB) BAL99LT1 BAL99LT1 | |
SMD SOT23 transistor MARK Y1
Abstract: TL431 smd marking smd transistor marking d10 smd transistor marking D9 X10 smd fuses MARKING SMD PNP TRANSISTOR R 1206 Zener diode smd marking c6 zener DIODE smd color marking smd transistor marking r14 NF marking TRANSISTOR SMD c4
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TND320/D Feb-07 D8278: SMD SOT23 transistor MARK Y1 TL431 smd marking smd transistor marking d10 smd transistor marking D9 X10 smd fuses MARKING SMD PNP TRANSISTOR R 1206 Zener diode smd marking c6 zener DIODE smd color marking smd transistor marking r14 NF marking TRANSISTOR SMD c4 | |
JSs sot23
Abstract: BFJ17
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OCR Scan |
MMBFJ177LT1* OT-23 O-236AB) BFJ175LT JSs sot23 BFJ17 | |
Contextual Info: SILICON PIN DIODE MMBV3401LT1* . designed primarily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um |
OCR Scan |
MMBV3401LT1* OT-23 O-236AB) MMBV3401LT1 | |
PS224
Abstract: ic PS224 optocoupler atx power supply schematic ferrite transformer power for power supply atx PS224 ic datasheet EROS2CHF ferrite transformer atx power supply 24v active clamp forward converter ATX 2005 schematic diagram power supply ATX12v SCHEMATICS
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TND313/D May-07 PS224 ic PS224 optocoupler atx power supply schematic ferrite transformer power for power supply atx PS224 ic datasheet EROS2CHF ferrite transformer atx power supply 24v active clamp forward converter ATX 2005 schematic diagram power supply ATX12v SCHEMATICS | |
MBFJ310Contextual Info: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W |
OCR Scan |
MMBFJ309LT1* MMBFJ310LT1* MMBFJ309LT1 MMBFJ310LT1 OT-23 O-236AB) OT-23 MBFJ309 MBFJ310 | |
01 tcc
Abstract: V209
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OCR Scan |
MMBV109LT1* MV209* OT-23 O-236AB) MMBV109LT1 O-226AC) BV109LT1 01 tcc V209 | |
Contextual Info: SILICON PIN DIODE MMBV3401LT1* . . . designed prim arily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um |
OCR Scan |
MMBV3401LT1* OT-23 O-236AB) | |
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Contextual Info: SILICON EPICAP DIODE MMBV3102LT1 . . designed in the Surface M ount package fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. CA SE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies |
OCR Scan |
MMBV3102LT1 OT-23 O-236AB) | |
Contextual Info: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq |
OCR Scan |
BSS123LT1* OT-23 O-236AB) | |
Contextual Info: MMBF5486LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit Vd g 25 Vdc VGS r 25 Vdc 'Gif) 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc fi #j a 556 °C/W Tj< T stg - 5 5 to +150 °C CASE 318-07, STYLE 10 |
OCR Scan |
MMBF5486LT1* OT-23 O-236AB) 2N5484 MMBF5486LT1 | |
transistor 2N5457
Abstract: transistor 6D sot23 MMBF5457LT1
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OCR Scan |
MMBF5457LT1* OT-23 O-236AB) MMBF5457LT1 2N5457 transistor 2N5457 transistor 6D sot23 MMBF5457LT1 | |
Substrate aluminaContextual Info: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12 |
OCR Scan |
BAW56LT1* OT-23 O-236AB) BAW56LT1 Substrate alumina | |
Contextual Info: M A X IM U M RATINGS Rating Symbol Value Unit VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage v EBO 5.0 V 'c 500 mAdc BC817-16LT1 BC817-25LT1 BC817-40LT1 Symbol Max Unit CASE 318-07, STYLE 6 SOT-23 TO-236AB Pd 225 mW 1.8 m W /X R»j a 556 |
OCR Scan |
BC817-16LT1 BC817-25LT1 BC817-40LT1 OT-23 O-236AB) OT-23 | |
SSs sot23Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Vd G 25 Unit V v GS{r) - 25 V Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 X /W T j. Tsta - 55 to + 150 X THERMAL CHARACTERISTICS |
OCR Scan |
MMBFJ175LT1* OT-23 O-236AB) MMBFJ175LT1 SSs sot23 | |
Contextual Info: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C |
OCR Scan |
MMBF5460LT1* MMBF5460LT1 OT-23 O-236AB) 2N5460 | |
MMBF4856LT1
Abstract: 5BFL
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OCR Scan |
MMBF4856LT1* OT-23 O-236AB) BF4856LT1 MPF4391 MMBF4856LT1 5BFL | |
Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V v GS(r) -2 5 V Symbol Max Unit PD 225 mW 1.8 mW/°C R0JA 556 °C/W T j' Tsta -5 5 to +150 °C THERM AL CHARACTERISTICS |
OCR Scan |
MMBFJ175LT1* OT-23 O-236AB) MMBFJ175LT1 |