W 07 SOT23 Search Results

BFR31

Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Contextual Info: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd

Contextual Info: M AXIM UM RATINGS Symbol Value Unit Co ntinuo us R everse Voltage Rating VR 70 Vdc Peak Forw ard Current 'f 100 m Adc Symbol Max Unit Pd 225 mW 1.8 m W 'X r «j a 556 cc w pd 300 mW 2.4 m W ;C r «j a 417 cw Tj- Tstq - 5 5 to +150 C BAL99LT1* CASE 318-07, STYLE 18

transistor 2N5457

Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
Contextual Info: MMBF5459LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Symbol Value Unit Vd G 25 Vdc Vg s W -2 5 Vdc 'g 10 mAdc Symbol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/W TJ. TstH -5 5 to +150 °C CASE 318-07, STYLE 10

Contextual Info: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value VDG 25 Unit V v GS(rl - 25 V Symbol Max Unit PD 225 mW 1.8 m W /T Röja 556 °C/W TJ« Tstfl - 55 to +150 X G aie V THERMAL CHARACTERISTICS

MMBF4856LT1

Abstract: MMBF4856
Contextual Info: MMBF4856LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V VGS<R> -2 5 V Symbol Max Unit Pd 225 mW 1.8 m W /T R»j a 556 °c/w TJ. Tstq - 55 to +150 °C 3 1v 2 THERMAL CHARACTERISTICS

bfj310

Abstract: marking HO SOT23
Contextual Info: MMBF1309LT1* MMBFJ310LT1* MAXIMUM RATINGS CASE 318-07, STYLE 10 SOT-23 TO-236AB Symbol Value Unit D rain-S ource Voltage Vds 25 Vdc G ate-Source Voltage Vg s 25 Vdc 'G 10 m A dc Symbol Max Unit Pd 225 mW 1.8 m w rc Fl «JA 556 °C/W TJ ’ Tsta - 55 to + 15 0

BAL99LT1

Contextual Info: M A XIM U M RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R«j a 556 °C/W PO 300 mW 2.4 mW/°C 9JA 417 °C/W - 5 5 to +150 °C Continuous Reverse Voltage Peak Forward Current BAL99LT1* CASE 318-07, STYLE 18 SOT-23 TO-236AB

SMD SOT23 transistor MARK Y1

Abstract: TL431 smd marking smd transistor marking d10 smd transistor marking D9 X10 smd fuses MARKING SMD PNP TRANSISTOR R 1206 Zener diode smd marking c6 zener DIODE smd color marking smd transistor marking r14 NF marking TRANSISTOR SMD c4
Contextual Info: TND320/D Rev. 0, Feb-07 40 W Printer Power Supply Reference Design Documentation 1 2007 ON Semiconductor. Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this

JSs sot23

Abstract: BFJ17
Contextual Info: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating D rain-G ate V oltag e Reverse Gate-Source V oltage Symbol Value vdg 25 V VGS(r) -2 5 V Symbol M ax Unit Pd 225 mW 1.8 m W rz fy JA 556 °c/w T j' Tstg - 55 to + 150 °c ,-Æ)

Contextual Info: SILICON PIN DIODE MMBV3401LT1* . designed primarily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um

PS224

Abstract: ic PS224 optocoupler atx power supply schematic ferrite transformer power for power supply atx PS224 ic datasheet EROS2CHF ferrite transformer atx power supply 24v active clamp forward converter ATX 2005 schematic diagram power supply ATX12v SCHEMATICS
Contextual Info: TND313/D Rev 2, May-07 High-Efficiency 305 W ATX Reference Design Documentation Package 2007 ON Semiconductor. 1 Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package.

MBFJ310

Contextual Info: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W

01 tcc

Abstract: V209
Contextual Info: MMBV109LT1* MV209* SILICON EPICAP DIODES . . . designed for general frequency control and tuning applications; provid­ ing solid-state re lia bility in replacem ent o f mechanical tuning methods. CASE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies

Contextual Info: SILICON PIN DIODE MMBV3401LT1* . . . designed prim arily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um

Contextual Info: SILICON EPICAP DIODE MMBV3102LT1 . . designed in the Surface M ount package fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. CA SE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies

Contextual Info: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq

Contextual Info: MMBF5486LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit Vd g 25 Vdc VGS r 25 Vdc 'Gif) 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc fi #j a 556 °C/W Tj< T stg - 5 5 to +150 °C CASE 318-07, STYLE 10

transistor 2N5457

Abstract: transistor 6D sot23 MMBF5457LT1
Contextual Info: MMBF5457LT1* M AXIM UM RATIN GS Rating Symbol Value VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GSIrl 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW X r 9JA 556 6C/W Tj- Tstq - 5 5 to +150 ÙC Reverse Gate-Source Voltage Gate Current CASE 318-07, STYLE 10

Substrate alumina

Contextual Info: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12

Contextual Info: M A X IM U M RATINGS Rating Symbol Value Unit VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage v EBO 5.0 V 'c 500 mAdc BC817-16LT1 BC817-25LT1 BC817-40LT1 Symbol Max Unit CASE 318-07, STYLE 6 SOT-23 TO-236AB Pd 225 mW 1.8 m W /X R»j a 556

SSs sot23

Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Vd G 25 Unit V v GS{r) - 25 V Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 X /W T j. Tsta - 55 to + 150 X THERMAL CHARACTERISTICS

Contextual Info: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C

MMBF4856LT1

Abstract: 5BFL
Contextual Info: MMBF4856LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X I M U M R A T IN G S Rating D ra in-G a te V o lta g e R e ve rse G a te -S o u rce V olta g e Symbol Value Unit V DG 25 V v g s ir ) -2 5 V Symbol Max U n it Fd 225 mW 1.8 m W /T r 0 JA 556 °C/W

Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V v GS(r) -2 5 V Symbol Max Unit PD 225 mW 1.8 mW/°C R0JA 556 °C/W T j' Tsta -5 5 to +150 °C THERM AL CHARACTERISTICS