W A6R Search Results

Contextual Info: Integrated Devi»ce Technology, Inc. CMOS DUAL-PORT RAM 3.3V, 16K 2K x 8-BIT WITH INTERRUPTS FEATURES: • Low-power operation — ID T 7 1 V 3 2 1 S Active: 2 5 0 m W (typ.) Standby: 3.3 m W (typ.) — ID T 7 1 V 3 2 1 L Active: 25 0 m W (typ.) Standby: 6 6 0 |iW (typ.)

Contextual Info: 2SK950 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • S w tching regulators • UPS • DC DC converters

3XXXS

Abstract: Typ41 marking code JSW IDT70V9289 IDT70V9289L xsxx
Contextual Info: A . /s ilk |iB |B IB a F . 1 1 1 1 1 I W 0 WL HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9289L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

3XXXS

Abstract: jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 IDT70V9389L 017L
Contextual Info: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9389L Features: * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

MARKING 05L

Abstract: Q321 3XXXS jsw marking marking code JSW IDT70V9379 IDT70V9379L
Contextual Info: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9379L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

026R

Abstract: M0192 LSE 019L
Contextual Info: CY7C056V CY7C057V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM E xp a n d ab le d ata bus to 72 b its o r m ore u sing M a s ­ te r/S la v e C hip S ele ct w hen using m o re th an o n e d evice Features • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta ­

7C141

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 « Ë W rT P R R S S lK x 8 Dual-Port Static RAM Features • 0.8-m icron C M O S for optim um speed/pow er • A utom atic power-down • TTL com patible • C apable o f w ith stan d in g greater than 2001V electrostatic discharge

Contextual Info: In te g ra te d D e v iz e T e c h n o lo g y , l i e . HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT FEATURES: • H igh-speed access - Com m ercial: 25/35/45/55ns max. • Low -power operation - ID T70121/70125S Active: 675m W (typ.) Standby: 5m W (typ.)

l4766

Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V24S/L Integrated D evice Technology, Inc. FEATURES: • • • • • • T rue D u a l-P o rte d m e m o ry c e lls w hich a llo w sim u lta ­ ne ous reads o f th e sa m e m e m o ry location

Contextual Info: W83795G/ADG Nuvoton H/W Monitor Date: Mar/3/2010 Revision: 1.43 W83795G/ADG Table of Content1. 2. 3. GENERAL DESCRIPTION W83795G . 4 GENERAL DESCRIPTION (W83795ADG) . 5

Contextual Info: HIGH-SPEED 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709089S/L I n te g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • T ru e D u a l-P o rte d m e m o ry cells w hich allo w s im u lta ­ • • and a d d res s inputs

Contextual Info: PRELIMINARY IDT7027S/L HIGH-SPEED 32Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • T ru e D u a l-P o rte d m e m o ry cells w h ic h a llo w s im u lta ­ neous a cce ss of th e s a m e m e m o ry lo cation H ig h -sp e e d access

1c 78 adg

Abstract: SB-TSI marking code ADg W83795 W83795G Intel PECI2.0 interface SBI Temperature Sensor Interface SB-TSI W83795ADG Amd 6970 SBI Temperature Sensor Interface SB-TSI Specification,
Contextual Info: W83795G/ADG Nuvoton H/W Monitor Date: Aug/2/2010 Revision: 1.41 W83795G/ADG Table of Content1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION W83795G . 4 GENERAL DESCRIPTION (W83795ADG). 5

W83795G

Abstract: w83795adg SBI Temperature Sensor Interface SB-TSI SB-TSI Intel PECI2.0 interface tr3 thermistor marking code ADg W83795 Intel PECI2.0 interface, FAN301
Contextual Info: W83795G/ADG Nuvoton H/W Monitor Date: May/05/2009 Revision: 1.1 W83795G/A Table of Content1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION W83795G . 4 GENERAL DESCRIPTION (W83795ADG). 5

Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM IDT7008S/L Features * * * True D ual-Ported m em ory c e lls w hich allow sim u ltan e o u s IDT7008 e a sily e x p a n d s data b u s width to 16 bits or reads of the s a m e m em ory location m ore u sin g the M aster/Slave select w hen c a s c a d in g m ore

Contextual Info: INTEGRATE» DEVICE bflE T> • L4Û25771 0014204 207 ■ IDT PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology« Inc. FEATURES: • M /S = H fo r B U S Y o u tp u t fla g o n M a s te r • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta ­

NS3200

Contextual Info: H I G H- SPE ED 64K x 8 SYNCHRONOUS D U A L - P O R T STATIC RAM PRELIMINARY IDT70908S/L FEATURES: • • T ru e D u a l-P o rte d m e m o ry cells w hich allo w sim u lta­ n eo us a c c e s s ot th e s a m e m e m o ry location • • Full synch ro no us operatio n on both ports

CY7C09569V

Contextual Info: ! ^ '•ttttttttWÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄW1- J M N K ♦ < ij / CY7C09569V CY7C09579V PRELIMINARY 5; 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V Low o p e ratin g p ow er Features — A c tiv e = 165 m A typ ical • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta ­

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 16Kx 8 DUAL-PORT STATIC RAM FEATURES: • • • M /S = L for B U S Y input o n S la v e T ru e D u a l-P o rte d m e m o ry cells w h ich a llo w s im u lta ­ • In terrupt F lag n e o u s re a d s of th e s a m e m e m o ry location

2740 D

Abstract: C4645
Contextual Info: gjjirN HIGH-SPEED 4Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, inc. FEATURES: IDT7024S/L • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta ­ n e o u s re a d s o f th e s a m e m e m o ry lo c a tio n • m o re th a n o n e d e v ice

Contextual Info: HIGH-SPEED 4K X 8 DUAL-PORT STATIC SRAM IDT7134SA/LA FEATURES: • H ig h -sp e e d a c ce s s — M ilita ry: 2 5 /3 5 /4 5 /5 5 /7 0 ns m ax. — In d u stria l: 5 5 n s (m ax.) — C o m m e rc ia l: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 n s (m ax.) L o w -p o w e r o pera tio n

d2b bus

Abstract: a18r
Contextual Info: D S 1280 DALLAS SEMICONDUCTOR DS1280 3-W ire to Bytewide Converter Chip FEATURES PIN ASSIGNMENT • Adapts JEDEC bytewide memory to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for dual port operation

Contextual Info: |9 | N a HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM w Éy IDT7005S/L Integrated Device Technology, Inc. • Interrupt Flag • On-chlp port arbitration logic • Full on-chip hardware support of semaphore signaling between ports • Fully asynchronous operation from either port

Contextual Info: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT IDT70121S/L IDT70125S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access - Com m ercial: 25/35/45/55ns max. • Low -power operation - ID T70121/70125S Active: 500m W (typ.)