W16 04 Search Results

w16 72

Abstract: MB86R02 fujitsu display 30 pin connector MB91460 indigo apix ashell
Contextual Info: Fujitsu Microelectronics Europe Application Note an-mb86r02-apix-link-setup-rev0-63.doc GRAPHICS CONTROLLERS MB86R02 SETUP FOR JADE-D APIX COMMUNICATION APPLICATION NOTE Internal Chapter 04 Revision History Revision History Date 2010-07-20 2009-06-09 2009-08-10

AN10022

Abstract: Ericsson
Contextual Info: AN10022 ISP1160/01 low-power consumption Rev. 04 — 10 February 2010 Application note Document information Info Content Keywords isp1160; isp1160/01; host controller; usb; universal serial bus Abstract This application note explains how to achieve low current consumption in

DG302

Abstract: DG300ABK DG300ABA dg301
Contextual Info: 19-0309; Rev 2; 9/04 TTL Compatible CMOS Analog Switches Features Maxim’s DG300–DG303 and DG300A–DG303A CMOS dual and quad analog switches combine low power operation with fast switching times and superior DC and AC switch characteristics. On-resistance is less than

cf 455

Abstract: 455 XTAL cf 455 a fm 485 Delta W16 transistor w16 CMX7031 cf-455 PE0201 4C00
Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX7031 Synthesiser Lock Time Publication: AN/2WR/7031SYNTH/1 March 2006 1 Introduction This document has been produced to illustrate the performance of the integrated synthesisers used in the CMX7031 Two-Way Radio Processor IC.

intel topside mark

Abstract: TE28F160S5-70 28F160S3 28F160S5 28F320S3 28F320S5 DT28F320S3-110 DT28F320S3-140 DT28F320S5-90 dt28f160s570
Contextual Info: WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F160S5 28F320S3, 28F320S5 SPECIFICATION UPDATE Release Date: November 1998 Order Number: 297849-009 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

DT28F160S5-70

Abstract: DT28F320S5-90 TE28F160S5-70 DT28F320S3-110 w16 90 TE28F160S3-100 PBT-GF30 transistor w16 28F160S5 28F320S5
Contextual Info: 3 VOLT AND 5 VOLT FlashFile MEMORY 28F160S3, 28F160S5 28F320S3, 28F320S5 x8/x16 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297849-010 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

TE28F160S5-70

Abstract: 28F160S5 DT28F160S5-70 DT28F320S5-90 28F160S5-70 te28f160s3-100 w16 90 DT28F160S3-75 28F160S3 28F320S3
Contextual Info: 3 Volt and 5 Volt FlashFile Memory 28F160S3, 28F320S3, 28F160S5, 28F320S5 x8/x16 Specification Update July 1999 Notice: The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications.

Contextual Info: fax id: 3026 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: (45-200 ns) 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

780SA

Contextual Info: fax id: 3026 CY27C256A 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 45 - 200 ns 5V ± 10% power supply Capable of withstanding >2001VESD Latch-up protection up to 200mA Two line control functions to prevent bus contention

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

CY27C040

Contextual Info: ADVANCED INFORMATION CYPRESS MILITARY SPECIFICATIONS Group A Subgroup Testing DC C haracteristics Para neter Subgroups VoH 1, 2, 3 VOL \ 1, 2, 3 VlH 1,2,-3 \ lo z ' 1 ,2 ,3 / \ Iix Icc 1, 2, 3 \ V il 1 ,2 ,3 \ _ IsB > 1 ,2 ,3 .\ \ •" 1 ,2 ,3 - Sw itching C haracteristics

Contextual Info: ^ s b b b b b b ? ¿s* rszgggfjKr CY27C512 r r ^ 'n p n n L> 1 1 i l l L o O 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA

27C256

Abstract: 27C256-45 CY27C256 27c256-200 27C256-150
Contextual Info: 32K X 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and m ilitary • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less th a n 83 mW when deselected • ± 10% Power supply tolerance Functional Description

14A0

Contextual Info: fax id: 3026 C Y 2 7 C 2 5 6 A 3 2 K x 8 CMOS EPROM Featu res • Very F ast Read A c c e s s T im e: 45 - 2 0 0 ns • SV ± 10% P o w e r S u p p l y • C a p a b le o f w i t h s t a n d i n g >200 1V ESD • L a tc h - u p P r o t e c tio n up to 2 0 0 m A

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

CY27C512

Contextual Info: fax id: 3019 CY27C512 p ro : V « *1 X X - 6 4 K x 8 CMOS EPROM is also available in windowed packages 28-pin hermetic DIP and and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Features • Very F ast Read A c c e s s T im e: (45 - 200 ns)

27C512

Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
Contextual Info: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27C512-70

Abstract: 1N3064 27C512 27C512-150 CY27C512 CY27C512-150WC
Contextual Info: ?/ CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27H256

Abstract: mil std 1275 power supply H-256 H2565
Contextual Info: PRELIMINARY 32K X Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

D168K

Abstract: smd cross reference 14LX PALC22V10B-15DMB CY7C271-35WMB PALC22V10B20WMB PALC22V10B-15LMB CY7C245-35WMB CY7C346-35RMB PALC22V10-25WMB
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have a date in the PPL (Preferred

CY27H512

Contextual Info: fax id: 3020 ,.V.Ï.Ï.V.^ y nr' Æ CYPRESS CY27H512 P R E L IM IN A R Y 64K x 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H512 is avail­

Contextual Info: fax id: 3020 ¿¡¡P: CYPRESS CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H512 is avail­

Contextual Info: _ CY7C286 64K x 8 Reprogrammable PROM Functional Description Features • CMOS for optimum speed/power T he CY7C286 is a high-performance 64K x 8 CMOS PRO M . T he CY7C286 is con­ figured in the JE D E C -standard 512K E PR O M pinout and is available in a