W18 TRANSISTOR Search Results
W18 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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W18 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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29070* intelContextual Info: Intel Wireless Flash Memory W18 128-Mbit W18 Family Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed |
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128-Mbit 128-bit 32Mbit 64Mbit 128Mbit 29070* intel | |
01171
Abstract: 29070* intel
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28F320W18, 28F640W18, 28F128W18 128-bit 32Mbit 64Mbit 128Mbit 01171 29070* intel | |
W18 90
Abstract: H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel
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28F320W18, 28F640W18, 28F128W18 128-bit 32Mbit 64Mbit 128Mbit W18 90 H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel | |
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed |
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28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) | |
28F128W18
Abstract: 28F320W18 28F640W18 intel DOC matrix 7x8
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28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 28F128W18 28F320W18 28F640W18 intel DOC matrix 7x8 | |
740-0007
Abstract: 29070* intel
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28F320W18, 28F640W18, 28F128W18 128-bit 64-bits 56-Ball 740-0007 29070* intel | |
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed |
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28F320W18, 28F640W18, 28F128W18 128-bit 64-bits and031 32-Mbit 64-Mbit 128-Mbit | |
strataflash 512mbit
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F
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128-Bit x32SH x16SB x16/x32 strataflash 512mbit FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F | |
740-0007
Abstract: 29070* intel
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28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 740-0007 29070* intel | |
3132* intelContextual Info: Intel Wireless Flash Memory W18 with A/D Multiplexed I/O Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 54 MHz — 60 ns Initial Access Read Speed — 14 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed |
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28-Jul-2006 313272-002US 3132* intel | |
PH28F640W18BE60
Abstract: PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18
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28F320W18, 28F640W18, 28F128W18 128-bit CapabiD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F320W18TE60 PH28F640W18BE60 PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18 | |
29070* intel
Abstract: transistor w18 57 small
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28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small | |
PH28F640W18BD60
Abstract: PH28F128W18BD60 PH28F640W18BE60 PH28F320W18BD60 29070* intel ph28f128w18td60
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28F320W18, 28F640W18, 28F128W18 128-bit GE28F320W18TD60 GE28F320W18BD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F640W18BD60 PH28F128W18BD60 PH28F640W18BE60 29070* intel ph28f128w18td60 | |
28F128W18
Abstract: 28F320W18 28F640W18 intel DOC
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28F320W18, 28F640W18, 28F128W18 128-bit 64-bits 32Mbit 64Mbit 128Mbit 28F128W18 28F320W18 28F640W18 intel DOC | |
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29070* intelContextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed |
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28F320W18, 28F640W18, 28F128W18 128-bit 64-bits and171 56-Ball 29070* intel | |
Stacked 4MB NOR FLASH & SRAM with AD multiplexed
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
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x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball | |
MAGNETIC HEAD circuit
Abstract: magnetic vertical water level sensor 77G DIODE water level indicator asbestos safety data sheet WATER LEVEL CONTROLLER water level controller circuit diagram circuit diagram water level sensor THC2 GLUE
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EZ-10 W18H33D23mm. 300mm, TH-12) UA-11 SUS304) MAGNETIC HEAD circuit magnetic vertical water level sensor 77G DIODE water level indicator asbestos safety data sheet WATER LEVEL CONTROLLER water level controller circuit diagram circuit diagram water level sensor THC2 GLUE | |
TMS320C6711 DSK module
Abstract: OPA2132 TMS320C6711 DSK kit circuit diagram ADS8364EVM SN74CBT3257 TPS2104 ADS8364 OPA2350 TMS320C6711 DSK manual
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ADS8364EVM SLAU084 TPS2104D ADS8364 30-Jan-2002 TMS320C6711 DSK module OPA2132 TMS320C6711 DSK kit circuit diagram ADS8364EVM SN74CBT3257 TPS2104 OPA2350 TMS320C6711 DSK manual | |
OPA2132Contextual Info: ADS8364EVM User’s Guide April 2002 Data Acquisition Products SLAU084 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue |
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ADS8364EVM SLAU084 TPS2104D ADS8364 30-Jan-2002 OPA2132 | |
Contextual Info: Lproauctit One. 'jeis.eu 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF230 (SILICON) The RF Line 1.5 W -90MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS NPN SILICON . . designed for 12.5 Volt, mid-band targe-signal amplifier applications in industrial and commercial FM equipment operating in the |
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MRF230 -90MHz 90MHz 2S-380 56-5BQ-S5-3B | |
IPC-6012
Abstract: R1651 R165-1 SN65HVD22 SN65HVD22D CRCW1206000F CRCW1206101F IPC-A-600 SLLU057
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SN65HVD22EVM SLLU057 27-Feb-2002 IPC-6012 R1651 R165-1 SN65HVD22 SN65HVD22D CRCW1206000F CRCW1206101F IPC-A-600 SLLU057 | |
Contextual Info: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features |
OCR Scan |
BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T 20-Jan-99 BFP181T/BFP1hay | |
w18 transistor
Abstract: marking W18 TRANSISTOR w18 BFP181TW SOT W18
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BFP181TW D-74025 25-Oct-96 w18 transistor marking W18 TRANSISTOR w18 BFP181TW SOT W18 | |
TS PQ4 24
Abstract: TM4C129LNCZAD
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TM4C129L TS PQ4 24 TM4C129LNCZAD |