W332M72V Search Results

A104

Abstract: A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x
Contextual Info: W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX White Electronic Designs 256MB SDRAM and DDR PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS BALLS „ 32M x 64 SDRAM „ Eutectic solder Sn63/Pb37 „ 32M x 72 SDRAM „ Diameter = 0.762mm 0.030 Nominal

Contextual Info: W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

W332M72V-XBX

Abstract: WEDPN16M72V-XB2X WEDPN4M72V-XB2X WEDPN8M72V-XB2X
Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

W332M72-ESSB

Contextual Info: White Electronic Designs W332M72V-XSBX ADVANCED* 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: White Electronic Designs W332M72V-XSBX PRELIMINARY* 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

diode A2-9

Abstract: W332M72V-XSBX
Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with

W3J2256M72-XPBX

Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
Contextual Info: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

w3j128m72

Abstract: ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32
Contextual Info: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 1GB 1GB Organization 256M x 32 128M x 64 128M x 72 2 x 256M x 16 Part Number W3J256M32G-XNBXƒ W3J128M64G-XNBXƒ W3J128M72G-XNBXƒ W3J2256M16G-XNBXƒ