WA 22 SIEMENS Search Results

smd JSs

Contextual Info: SIEMENS SDA 2526 MOS IC Nonvolatile Memory 2-Kbit E2PROM with 12C Bus Interface Features • • • • • • • • • W ord-organized program m able nonvolatile memory in n-channel floating-gate technology E2PROM 256 x 8-bit organization Supply voltage 5 V

Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus SDA 2526-5 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

SIEMENS BSt L 45 100

Abstract: 0D4T
Contextual Info: bOE ] • flE3SbDS DD4T371 274 M S I E S SIEM ENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 1-Kbit E2PROM with I 2C Bus SDA 2516-2 Preliminary Data MOS IC Features • W ord-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM)

transistor kA2 smd

Abstract: AEP01481
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms

e1414

Abstract: siemens master drive circuit diagram Siemens pulse sequence
Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)

Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

e1414

Abstract: siemens master drive circuit diagram L1152B siemens sda
Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)

Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

siemens master drive circuit diagram

Abstract: 9221 st tgl 4977 Q67100-H3260 Q67100-H5101 SDA2586 siemens sda2586 UEBOI276 CI 4583
Contextual Info: SIEMENS «easbos a a a s i a a 771 Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586 MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V

Contextual Info: SIEMENS SDE 2526 MOS 1C Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface with Extended Temperature Range Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E PROM • 256 X 8-bit organization • + 5 V supply voltage

siemens master drive circuit diagram

Abstract: AKER Ah NL-2500 TD13 park 16068 siemens 7st
Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I2C Bus and Write Protection SDA 3546-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)

K 192 A transistor

Contextual Info: SIEMENS BCR 192 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22ki2, R2=47kQ Type BCR 192 Marking Ordering Code Pin Configuration WPs Q62702-C2265 1=B Package 2=E 3=C SOT-23

BPX38

Abstract: flux meter glass lens phototransistor
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)

D 5464

Abstract: 5423-PO
Contextual Info: SIEMENS CMPNTS-, OPTO SIEMENS 44E D fl23b32b QGQSMM4 □ H S I E X LH 5423-PO SINGLE HETRO JUNCTION LH 5463-KO DOUBLE HETRO JUNCTION LH 5424-QO DOUBLE HETRO JUNCTION LH 5464-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T13/4 5mm LED LAMP _

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage

Contextual Info: SIEMENS FEATURES • High Currant Transfer Ratio CNY17F-1, 40-80% CNY17F-2,63-125% CNY17F-3,100-200% CNY17F-4,100-320% • Breakdown Voltage, 5300 VACRM8 • High Collector'Emitter Voltage • VCEO-7 0 V • No Base Terminal Connection for Im­ proved Common Mode Interface Immunity

smd transistor A1s

Abstract: smd transistor 7D A1s smd TRANSISTOR SMD A1S
Contextual Info: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4270 Features • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms

TQX6273

Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
Contextual Info: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97

aktive elektronische bauelemente ddr

Abstract: hamatech rde 090 0 280 130 023 bosch 735 linear technologie bosch 0 130 002 562 OSRAM TRANSCEIVER stu 407 bauelemente DDR 101B
Contextual Info: Inhaltsverzeichnis Lagebericht und Konzernlagebericht . . . . . . . Bericht des Aufsichtsrates . . . . . . . . . . . . . . . Konzern-Gewinn- und Verlustrechnungen . . . Konzernbilanzen . . . . . . . . . . . . . . . . . . . . . Entwicklung des Konzerneigenkapitals . . . . .

panasonic minas

Abstract: DV0P37300 h1162 Service manual Servo Driver Panasonic matsua motor encoder
Contextual Info: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01

s34 smd diode

Abstract: diode smd vw3 marking s34 tle420 s34 diode
Contextual Info: SIEMENS 1-A Quad-HBD Quad-Half-Bridge Driver TLE 4208 Overview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption

80C200

Abstract: 82C200 C165 EMM386 SJA1000 8259+Interrupt+Controller
Contextual Info: pcCAN Hard- und Softwaremanual Ausgabe Juli 1998 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG pcCAN Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das