WB4 MARKING Search Results

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Abstract: J152 mosfet transistor 2110 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

93F2975

Abstract: 865 marking amplifier MRF9120LR3
Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

rf push pull mosfet power amplifier

Abstract: class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

rf push pull mosfet power amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

rf push pull mosfet power amplifier

Abstract: MRF9120 MRF9120LR3 marking WB4
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

MRF9120

Abstract: MRF9120LR3
Contextual Info: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

TH 2190 mosfet

Abstract: CDR33BX104AKWS MRF21180 MRF21180R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MOSFET 1300 F2

Abstract: TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6 303 2170 001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF377HR3

Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data MRF21180 Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF9120

Contextual Info: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

MRF9120

Contextual Info: Freescale Semiconductor Technical Data MRF9120 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

MRF9120L

Abstract: 100B4R7
Contextual Info: Freescale Semiconductor Technical Data MRF9120 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

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Abstract: NIPPON CHEMI nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF377H

Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF377H

Abstract: nippon capacitors J628 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

0805J

Abstract: nippon capacitors J564 Nippon chemi
Contextual Info: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Contextual Info: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

MRF377

Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor amplifier 1ghz 1400 watts

Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
Contextual Info: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

nippon capacitors

Abstract: dvbt transmitter j564 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

2DS1047

Abstract: nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

nitto SWT 10

Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device