WEIDA SEMICONDUCTOR Search Results

MB 3710

Abstract: POWERCHIP WCMC2016V1X UM36-I 9831
Contextual Info: WCMC2016V1X ADVANCE INFORMATION General Physical Specification 128K x 16 Pseudo Static RAM DIE For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website http://www.cypress.com .

VFBGA 48ball

Abstract: WCMC4016V9B-55 z1012
Contextual Info: WCMC4016V9B 4-Mbit 256K x 16 Pseudo Static RAM Features HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High

CG6257AM

Abstract: WCMC4016V7X
Contextual Info: WCMC4016V7X CG6257AM PRELIMINARY 4Mb 256K x 16 Pseudo Static RAM Features when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low

WCMC2008V9B-55BVI

Abstract: WCMC2008V9B-70BVI
Contextual Info: WCMC2008V9B ADVANCE INFORMATION 2Mb 256K x 8 Pseudo Static RAM Features • • • • • • • power-down feature that reduces power consumption dramatically when deselected. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE)

WCMC4016V7B

Abstract: WCMC4016V7B-55
Contextual Info: WCMC4016V7B 4-Mbit 256K x 16 Pseudo Static RAM Features standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High

WCMC2016V9B-55

Abstract: z1012
Contextual Info: WCMC2016V9B 2-Mbit 128K x 16 Pseudo Static RAM Features can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

CG6263AM

Abstract: WCMC2016V7X 25Z-12
Contextual Info: PRELIMINARY WCMC2016V7X CG6263AM 2Mb 128K x 16 Pseudo Static RAM Features when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low

CG6264AM

Contextual Info: CG6264AM ADVANCE INFORMATION 2Mb 128K x 16 Pseudo Static RAM Features more than 99% The device can also be put into standby mode when deselected (CE HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CEHIGH

WCMC4008V9B-70BVI

Abstract: WCMC4008V9B-55BVI
Contextual Info: ADVANCE INFORMATION WCMC4008V9B 4Mb 512K x 8 Pseudo Static RAM Features • • • • • • • power-down feature tht reduces power consumption dramatically when deselected. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE)

CG6264AM

Abstract: WCMC2016V9X
Contextual Info: ADVANCE INFORMATION WCMC2016V9X CG6264AM 2Mb 128K x 16 Pseudo Static RAM Features more than 99% The device can also be put into standby mode when deselected (CE HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are

CG6258AM

Abstract: WCMC4016V9X
Contextual Info: WCMC4016V9X CG6258AM ADVANCE INFORMATION 4Mb 256K x 16 Pseudo Static RAM Features when deselected (CE HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CEHIGH

WCMC8016V9X

Abstract: WCMC8016V9X-FI70
Contextual Info: ADVANCE INFORMATION WCMC8016V9X 8Mb 512K x 16 Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz • • • • • — Typical active current: 11mA @ f = fmax

CG6263AM

Abstract: supplay 12 v
Contextual Info: CG6263AM PRELIMINARY 2Mb 128K x 16 Pseudo Static RAM Features when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low

CG6257AM

Contextual Info: CG6257AM PRELIMINARY 4Mb 256K x 16 Pseudo Static RAM Features when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low

CG6258AM

Contextual Info: CG6258AM ADVANCE INFORMATION 4Mb 256K x 16 Pseudo Static RAM Features when deselected (CE HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CEHIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High

WCMC2016V7B-55

Contextual Info: WCMC2016V7B PRELIMINARY 2-Mbit 128K x 16 Pseudo Static RAM Features standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High

Contextual Info: WCMC2016V9B ADVANCE INFORMATION 2Mb 128K x 16 Pseudo Static RAM Features can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

14027

Abstract: BV48A WCMC1616V9X WCMC1616V9X-FI70
Contextual Info: ADVANCE INFORMATION WCMC1616V9X 1Mb x 16 Pseudo Static RAM Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX

Cp5609amt

Abstract: cp5858am CP5629BM CG5113 PCN030073 W48S111-14G 5L512 CY2292ASI CY2292SL-1V1 CY2292SC-68T
Contextual Info: SEMICONDUCTOR FINAL PRODUCT CHANGE NOTIFICATION PCN: PCN030073 DATE: November 7, 2003 Subject: Prune List Q4, 2003 To: Description of Change: Cypress is officially announcing the obsolescence of these products. Refer to the attached list for the list of products being discontinued.

WCMA4016U1X

Abstract: WCMA4016U1X-FF70
Contextual Info: Y62147BV L Preliminary WCMA4016U1X 256K x 16 Static RAM Features • Low voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE1 and CE2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

WCMC2016V7B-55

Contextual Info: WCMC2016V7B 2-Mbit 128K x 16 Pseudo Static RAM Features BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH),