WF 2050 Search Results

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS NEW LK WF series ● DIMENSIONS & MAXIMUM PERMISSIBLE RIPPLE CURRENT 6.3 Impedance Item ØDxL mm F (Ω)max. 20° C 100kHz 10 Ripple current (mA rms) 105° C 100kHz Impedance

8X16

Abstract: DC10 dc-101a dc101a capacitors 8x16
Contextual Info: A L U M IN U M M E L E C T R O L Y T IC nichicon C A P A C IT O R S S ta n d a rd , For G e n era l P u rp o ses - A xial Lead T ype wf 02 type series Anti-Solvent Featurs (Tlïough lOOVoniy) • Axial lead type of standard series for general purposes. • S p e c if ic a t io n s

TPS62301DRC

Contextual Info: QFN-10 TPS62300, TPS62301, TPS62302 TPS62303, TPS62304, TPS62305 TPS62306, TPS62320, TPS62321 CSP-8 www.ti.com SLVS528 – JULY 2004 500-mA, 3-MHz SYNCHRONOUS STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING Up to 93% Efficiency at 3-MHz Operation Up to 500-mA Output Current at VI = 2.7 V

Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGPS40B120UD

Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Contextual Info: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Contextual Info: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

mosfet 1200V 40A

Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
Contextual Info: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.

Contextual Info: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

TRANSISTOR N 1380 600 300 SC

Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Contextual Info: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

IRFPS37N50A

Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
Contextual Info: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

mosfet 1200V 40A

Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

wf 2050

Abstract: 2SK303
Contextual Info: O rdering number : EN 856F 2SK303 No.856F N-Channel Junction Silicon FET Lo w-F requency General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and impedance conversion.

v3320

Contextual Info: fax id: 2050 CYM1841V33 :/ C Y P R E S S 256K x 32 3.3V Static RAM Module Features ule is constructed from two 256K x 16 SRAMs in SOJ packag­ es mounted on an epoxy laminate substrate. Four chip selects are used to independently enable the four bytes. Reading or

diode marking w8

Abstract: DIODE WJ SOD323
Contextual Info: BZT52C2V4S - BZT52C39S NEW PRODUCT SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data · · · · · G Case: SOD-323, Plastic

BZT52-C9V1S

Contextual Info: NEW PRODUCT BZT52C2V4S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •

Contextual Info: BZT52C2V4S - BZT52C39S NEW PRODUCT SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data · · · · · G Case: SOD-323, Plastic

Zener Diode LF marking

Abstract: marking code zener diode wl marking WM diode zener WL diode cathode marking code 7-7-7-7 BZT52C2V4S BZT52C2V7S BZT52C39S DIODE WJ SOD323 BZT52C3V3S
Contextual Info: BZT52C2V4S - BZT52C39S SURFACE MOUNT ZENER DIODE Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes • • • Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202,

RJ-61

Abstract: eb33 ECRJC ECRJE020E12 ECRJA030E12 B54101 ECRKN020 ECRJC006A ECRJA006 ECRJA020E
Contextual Info: Panasonic n ;T]#$ f#$E Ratings and Characteristics l ti b !J 73 2%v 9 !J-XJ Trimmer Capacitors (Series J) 11 Item ;z & ‘tu Jtf R a t e d V o l t a g e I Ifi/ ‘<ti It- Dlelectnc W i t h s t a n d i n g V o l t a g e 100 VDC I 220 VDC @ & ti Iii lnsulatlon Resistance (at C max )

PPA-GF15

Abstract: EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-32 EIA-364
Contextual Info: tifca Electronics 108-1956 Product Specification 12Aug02 Rev B EC 0990-1294-02 PC/104 and PC/104-Plus Connector Systems 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics PC/104 and PC/104-Plus connector systems in both stackthrough and non-stackthrough styles. The PC/104

T388N

Abstract: TY125
Contextual Info: A E ^ - A K T I EN GE SE LL SC HA FT fllC D • QQ2T415 OGDfc.172 1 ■ AEGG T3 8 8 N T yp enreihe/Type range_ T 3 8 8 N 400* 600 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um perm issible values