WF-5 TRANSISTOR Search Results

2SA1591

Contextual Info: Ordering number: EN2 5 1 5 2SA 1591/2SC 4133 P N IV N P N Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias-Resistance Wf- i V Jpifcfc Applications //' jiiif • Switching circuit, inverter circuit, interface cirçdiÆ*^ d ^ ^ r ^ i r c u ^

2SC2412KLN

Contextual Info: by>V 2SC2412KLN £ /Transistors ie 5 f + V 7 il 'y u -fte N P N b y > ' > '* $ Epitaxial Planar NPN Silicon Transistor teJiiJfc&agW iH fffl/Low Freq. Noise Amp. • Wfÿ'Tjsgl/Dimensions Unit : mm N F =1d B (Typ.) (at V c e = 6 V , IC=0.1mA, f=1KHz, Rg= 1 0 k Q )

2SD1664

Contextual Info: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low

Contextual Info: 3Ô750Ô1 0055514 A 17E D G E SOLID STATE Radiation-Hardened High-Reliability IC s 'T ^ - t y o S CMM5104/1RZ A O - 1 A 1 - z 1 8 -V D0 1 7 -A 6 A2 - 3 16 -A 7 A3 - 4 1 5 -A8 A4 - 5 14 - A 9 A5 - 6 D OUT -wF -

transistor OE 4k

Contextual Info: 2SB1183F5 h ~7 > v Z . $ / T ransistors O C D 4 f c w D l O O A 1 O O C R r O • Wft 1 * - > ;> h > « « ) Epitaxial Planar PNP Silicon Transistor (Darlington) Freq. Power Amp. • wf?\rì£|3|/'Diinensions (Unit : mm) IJ ^ h > iii^ cT iS h F E T i> 5 o

2SD1733F5

Abstract: 2SB1181F5
Contextual Info: h ~7 > V ^ £ / T ransistors 2 S D 1 T 3 3 p 2SD1733F5 g i e i r ^ “ > 7 ^ y i / - t » N P N Epitaxial Planar NPN Silicon Transistors i& J iiÄ ^ ^ iitiffl/L o w Freq. Power Amp. • WfêTj-jiia/Dimensions Unit : mm • 435 1) W E , ife"P<fc -5 o V ceo — 8 0 V ? lc = 1 A

Contextual Info: 2SA1037AKLN h 7 > ÿ ^ ^ / T ransistors 2 S A 1 3 7 A K L N Epitaxial Planar PNP Silicon Transistor fëJi J!&1K&;H ÎiH ffl/L o w Frequency Low Noise • fô H • Wfé'^J'iÉIil/'Dimensions Unit : mm) 1) « a m T ' f c S o v X ï N F = 0 .5 d B (Typ.) 2) Cob A'-fê^'o C 0b = 4 p F (Typ.)

Contextual Info: h7 > V UMB4N •l U i n y f • UMB4N/IMB4A $ / T ransistors æl VU-T7 K^ i — Jb KV/W^ T V Isolated Mini-Mold Device — K "7 - f / ’î/lnverter Driver £ h 7 / V • Wfè^ jiH /D im e n s io n s Unit : mm « * X 1) U M T (S C -7 0 ), 2 fliCD S M T (S C -5 9 ) t l ë l —

lg410b

Abstract: LG-410B yvcg LG-403 LG-404 LG-409 LG-410 FA JO2
Contextual Info: f T ^ r ^ P H O T O IN T E R R U P T E R S ACTUATOR T A PE PHOTO IN T E R R U P T E R S LG-403 LG -403«. h* f c i * j J S 4 '7 * h lC ^ - fe >-y-gBCC !?K> S WféTTîÈ DIMENSIONS Unit:m m 7 7 7 -> 5 The L G -403 actuator type photointerrupter combined

P channel 600v 20a IGBT

Abstract: HF40D120ACE IRGP20B120U-E
Contextual Info: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

Contextual Info: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

HF40D120ACE

Abstract: IRGP20B120U-E
Contextual Info: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

10a 400V ultra fast diode d2pak

Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

IRGR4045D

Contextual Info: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features •          IC  6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

WF VQE 13

Abstract: VQE 24 WF VQE 24 Wf vqe 14 vqe 23 VQE21 wf vqe 23 VQE24 WF VQE 12 vqe 13
Contextual Info: FUNKAMATEUR - Bauelementeinformation Anzeigen VD/VT Koppler Vergleichslisten Optoelektronik Anzeigen, IR-Dioden, Fotodioden- und Transistoren, Koppler Lichtemitteranzeigen o Farbe WF rot rot grün grün rot rot grün grün grün grün rot rot rot grün grün

Contextual Info: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA

igbt 20A 1200v

Abstract: 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
Contextual Info: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

Contextual Info: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

035H

Abstract: HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
Contextual Info: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGPS40B120UD

Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Contextual Info: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.