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    Untitled

    Abstract: No abstract text available
    Text: Am99C641 65,536 x 1 Static Read/W rite Random-Access Memory PRELIMINARY High-performance CMOS circuit High Speed - access times as Single 5-V ±10% power-supply Low power - 715 mW active 110 mW TTL - Standby design fast as operation and •process 2 V data retention for battery back up applications


    OCR Scan     		PDF Am99C641 22-pin WF021440

    KS000010

    Abstract: No abstract text available
    Text: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ Am99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process


    OCR Scan     		PDF 2Sfa54 Am99C641 Am99CL641 536x1 22-pin OP002570 OP002580 002Sb71 CLR022* KS000010