WG 599 Search Results

CPI twt

Abstract: twt 100 GHz diode wg 599 Ka-band
Contextual Info: The VTA-6430A Series are a 500W CW Coupled-Cavity Traveling-Wave Tube covering 28.35-31.00 GHz Ka-Band with 1 GHz Instantanous bandwidth, Periodic-Permanent-Magnet Focused, WG-28 (compatible with UG-599/U) Waveguide Input, WG-28 (compatible with UG-599/U) Waveguide Output, and

0 130 821 074

Abstract: wg 252 WG 6340 3570 1210 123 18X48 Jamicon 6800 35v jamicon wl
Contextual Info: RADIAL TYPE WL Low Impedance, Miniature Sized Series TX WL WG • Smaller case sizes than WG series. • Lower impedance at high frequency and high ripple current. • Suitable for output of Motherboard and Switching power supplies. SPECIFICATION Item Characteristic

Contextual Info: A߀ Double Balanced Mixers 18-40 GHz 5 WG 790 Series Features • ■ ■ ■ ■ Broad Bandwidth Planar C onstruction Beam Lead Diodes High Reliability Small and Lightweight Description These m ixers are broadband, double-balanced dow nconverters utiliz­

GaAs Gunn Diode "94 GHz"

Abstract: gunn diode radar 10 GHz gunn diode
Contextual Info: AjfetXm Electronically Tuned Gunn Oscillators 18-140 GHz 6 WG V Series 6-42V & 6-28V Features • ■ ■ ■ ■ ■ ■ Series GaAs or InP Electronic Tuning to 4 GHz Excellent Linearity O utput Power to 200 mW Small and Lightweight Optional Mechanical Tuning

wr15 waveguide

Abstract: WR-03 wr06 waveguide 67B-009 74002 74004 74005 WR15 67B-006 67B-010
Contextual Info: Fixed Attenuators 18 - 325 GHz 3 WG 109 Series V2.00 Features ● ● ● Low and High Power Full Waveguide Bandwidths Minimum VSWR Description This series of attenuators provides an inexpensive method of making measurements in fixed frequency laboratory or production test set-ups. Fixed attenuators

FHR02X

Abstract: FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

FHX02X

Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

FHX45X

Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

GaAs FET HEMT Chips

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

high power FET transistor s-parameters

Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

eudyna GaAs FET RF Transistor

Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

eudyna GaAs FET RF Transistor

Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor

3-42-102

Abstract: 220325 30.4-112 31-0102 303-102
Contextual Info: Variable Attenuators and Phase Shifters 18-325 GHz 3 WG 103/112 Series Dial Variable Phase Shifter Features • ■ ■ ■ 0 ‘ -180" Phase Shift Accurate Repeatability Minimum Insertion Loss Frequency C alibration Available Description Variable w aveguide phase shifters provide a sim ple and con­

diode wg 599

Abstract: WR-22 8 GHz waveguide circulator 710232 WR22 RF CIRCULATOR
Contextual Info: SPST and SPDT PIN Diode Switches 18-110 GHz 7 WG 231/232 Series SMA FEMALE Features • ■ ■ ■ ■ Low Loss High Isolation Fast Switching Compact Package Optional Integral Driver T i B Description This series of SPST and SPDT PIN diode switches is available in seven

MIL-F-3922/54-003

Contextual Info: 3-Port Waveguide Junction Circulators & Isolators 18-110 GHz 2 WG 400 Series Features • ■ ■ ■ ■ 20 dB Isolation Typical Full Waveguide Bandwidth Low Insertion Loss 3 GHz RF Bandwidth -30°C to +70°C Operating Temperature Description These junction circulators are 3-port modified Y-junction ferrite

74002

Abstract: 74004 WR-19 WR22
Contextual Info: Fixed Attenuators 18-325 GHz 3 WG 109 Series Features • Low and High Power ■ Full Waveguide Bandwidths ■ Minimum VSWR c in— Description = c ■ — — n « — \ This series of attenuators provides an inexpensive method of making measurements in fixed frequency laboratory or produc­

8 GHz waveguide circulator

Abstract: 2-28-400 waveguide isolator high power waveguide isolators RF CIRCULATOR
Contextual Info: M an A M P com pany 3-Port Waveguide Junction Circulators & Isolators 1 8 - 1 1 0 GHz 2 WG 400 Series V2.00 Features • -30°C to +70°C O perating Tem perature • Low Insertion Loss Description These junction circulators are 3-port m odified Y-junction

Contextual Info: Aftœ m Pulsed Gunn Oscillators 18-60 GHz 6 WG P Series Features Environmental • Small and Lightweight ■ Peak Output Power to SOOmW ■ Fast Rise Time These devices are designed to meet the following conditions: Description Temperature Cycle Test The high output power, excellent frequency and power stability of

x band diode detector waveguide

Contextual Info: jyfat Zero Biased Waveguide Detectors 18-110 GHz 4 WG 720 Series Features • ■ ■ ■ ■ High O u tp u t Sensitivity Full Bandwidth Coverage Beam Lead Diodes High Reliability C om pact Package o (0 )o € Description These zero biased dete cto rs are lo w cost units available in seven bands

Contextual Info: M foi Mechanically Tuned Gunn Oscillators 6 WG M Series 18-140 GHz Features • ■ ■ ■ ■ ■ ■ ■ 6-42M & 6-28M Seríes GaAs o r InP Excellent Frequency Stability High O u tp u t Power L o w AM and FM Noise Small and Lightweight Standard and Broadband Tuning

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

303-102

Contextual Info: M an AMP com pany Variable Attenuators and Phase Shifters 18 - 325 GHz 3 WG 103/112 Series V2.00 Dial Variable Phase Shifter Features • 0 ° - 1 8 0 ° P h a se S h i t • Accurate Repeatability • M inin um Insertion L o ss • F req u en cy Calibration A vailable