WINBOND MOBILE DRAM Search Results

w989d2kb

Abstract: smd 6ac
Contextual Info: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

Contextual Info: W988D6FB / W988D2FB 256Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

W989D6KBGX

Abstract: W989D2KBJX
Contextual Info: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

Contextual Info: W989D6CB / W989D2CB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

Contextual Info: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

Contextual Info: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

W989D2KB

Abstract: smd 6ac W989D6 W989D2K
Contextual Info: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

W25R128FV

Abstract: W25Q128JV W25R128F W25Q128FV W25Q128F USON-8 W25Q80DL W978H6KB W25Q80BVSSIG
Contextual Info: 2014 PRODUCT SELECTION GUIDE Mobile DRAM Specialty DRAM Code Storage Flash Memory Winbond Electronics Corporation is a worldwide leading supplier of specialty memory IC’s. The company provides memory solution backed by the expert capabilities of design, manufacturing

winband

Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
Contextual Info: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM

W25X128

Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
Contextual Info: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM

RTL8111

Abstract: Realtek RTL8111 US15W processor atom battery z510 winbond mobile dram ETX kontron
Contextual Info: conga-QA Module for ultra mobile applications Ultra Mobile Ultra compact Qseven module based on Intel Atom™ Processor Z5xx Formfactor Qseven Form Factor, 70x70 mm2 Lowest power consumption CPU Fast serial differential interfaces for high data bandwidth

W986416EH

Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Contextual Info: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/

W988D6F

Abstract: winbond 05 solder ball material W988D2F
Contextual Info: W988D6FB / W988D2FB 256Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

A01-002

Abstract: by1 SMD winbond mobile dram A01002 W987D6HBGX
Contextual Info: W987D6HB / W987D2HB 128Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

W989

Abstract: W989D2CB W989D6CB
Contextual Info: W989D6CB / W989D2CB 512Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

A01-005

Abstract: W989D2CBJX7E winbond mobile dram
Contextual Info: W989D6CB / W989D2CB 512Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

EIAJ-IC-121-17

Abstract: JESD22-A110 EIAJ-ED4701-D323 EIAJ-IC-121-18 MIL-STD-883 PRESSURE COOKER failure rate SM stress migration EIAJ-IC-121 JESD22A110
Contextual Info: Quality and Reliability Report 5. Reliability Testing The purpose of reliability testing is to ensure that The purpose of the high-temperature operating life products are properly designed and assembled by HTOL test is to determine the reliability of subjecting them to stress conditions that acceler-

siemens F716

Abstract: f9321 book national semiconductor diode PJ 0416 National PC87591 National PC87591l 74x541 74x377 pj 87 diode TCS 4199
Contextual Info: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as

Contextual Info: W83194R-39/-39A 100MHZ 3-DIMM CLOCK Table of Contents1. GENERAL DESCRIPTION . 3 2. PRODUCT FEATURES . 3

ali m1487 B1

Abstract: m6117c a1 ali m6117c a1 cpu M6117C ali m6117c m1487 b1 ALI chipset M1487 ALI 1487 RTL8029AS SBC-456
Contextual Info: Table of Contents 7 11 6 8 12 9 13 10 14 15 siz e bC om pa ct SB Cs s PC ia LP Su X- ed 29 26 23 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○

Contextual Info: W83194R-39/-39A 100MHZ 3-DIMM CLOCK W83194R-39/39A Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16

W963A6BBN

Abstract: W963A6BBN70 W963A6BBN80
Contextual Info: W963A6BBN 512K WORD x 16BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16