ISO18000-6B
Abstract: passive rfid tags UHF rfid reader 18000-6C EPC64 UCODE EPC 1.19 em reader module tag 89 0X13 LPC2103
Text: RFID UHF Module WJM Series Application Programmer’s Interface API Release 1.0 WJ Communications, Inc. 401 River Oaks Parkway San Jose, CA 95134-1916 Tel: (800) WJ1-4401 Fax: (408) 577-6621 http://www.wj.com DN: 455372 WJM Series API Release 1.0 RFID UHF Module
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WJ1-4401
ISO18000-6B
passive rfid tags
UHF rfid reader
18000-6C
EPC64
UCODE EPC 1.19
em reader module
tag 89
0X13
LPC2103
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TAG 064
Abstract: a1fe wj model marking code EPC64 UHF rfid reader A795 receiver of rfid tag RFID uart 0x4C45 RFid reader for traffic applications
Text: MPR Series PC Card Application Programmer’s Interface API Release 3.0 WJ Communications, Inc. 401 River Oaks Pkwy San Jose, CA 94089 Tel: (800) WJ1-4401 Fax: (408) 577-6621 http://www.wj.com MPR Series UHF RFID Reader/Writer Release 3.0 Design Guideline
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WJ1-4401
TAG 064
a1fe
wj model marking code
EPC64
UHF rfid reader
A795
receiver of rfid tag
RFID uart
0x4C45
RFid reader for traffic applications
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UHF rfid reader
Abstract: MPR5000 EPC gen 2 tag 89 MPR6000 MPR7000 RFID reader SL RFID writer SL
Text: MPR Series PC Card UHF Generation 2 Class 1 Application Programmer’s Interface API Release 1.0 WJ Communications, Inc. 401 River Oaks Pkwy San Jose, CA 94089 Tel: (800) WJ1-4401 Fax: (408) 577-6621 http://www.wj.com MPR Series UHF RFID Reader/Writer
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WJ1-4401
UHF rfid reader
MPR5000
EPC gen 2
tag 89
MPR6000
MPR7000
RFID reader SL
RFID writer SL
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AH103
Abstract: AH103-PCB1750 AH103-PCB1900 AH103-PCB2140 AH103-PCB900 JESD22-A114 NJM78L05 134.2 kHz RFID
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
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AH103
AH103
IS-95
1-800-WJ1-4401
AH103-PCB1750
AH103-PCB1900
AH103-PCB2140
AH103-PCB900
JESD22-A114
NJM78L05
134.2 kHz RFID
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Untitled
Abstract: No abstract text available
Text: AH103A The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
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AH103A
AH103A
1-800-WJ1-4401
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Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
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AH103
AH103
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
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AH103
AH103
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
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AH103
AH103
minimum61
1-800-WJ1-4401
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cx 1213 circuit diagram
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of
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AH103
AH103
1-800-WJ1-4401
cx 1213 circuit diagram
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T12F
Abstract: AL 2450 dv EUPEC T 760 S101 T1052 T60F EUPEC T 821 EUPEC tt 25 N 12 EUPEC TT 66 n 12 EUPEC tt 66 N 16
Text: Fast thyristors •trmsm 1 Type 4TE D It s m / ¡ 2dt • It a v m ^ 34Q35T7 c V TO it DOOOlOfci TaT ■ UPEC EUPE (di/dt)cr (dv/dt)cr Vgt Ig t Rthjc tvj max Outline 1 > ■ T 12 F A 10 ms, 10 ms, 180 °el tv, DIN DIN Wj = tv j Wj max tv| max sin. tvj max
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T1052
T1078
T12F
AL 2450 dv
EUPEC T 760
S101
T60F
EUPEC T 821
EUPEC tt 25 N 12
EUPEC TT 66 n 12
EUPEC tt 66 N 16
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B601
Abstract: BSU60 three phase sinus diode wj 56 bp DIODE BP DDB6U110N pr75 34D32T7 B6U110
Text: ISOPACK Module ISOPACK Modules Modules ISOPACK Typ Type I f r m sm V DRM, V r r m V dsm = Vdrm V rsm = V rrm 10 + 1 0 0 V A V / i 2dt If s m ms, 10 ld /tc ms, Wj max Wj max A A 2s A/°C Tt Rthjc RthCK tvj = tv , = tv j max tv | max pro Zw eig per arm par bras
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BSU60
B6U70
B6U90N
B6U110
l6U160
Jtiiiiimi125
-160/sa|
CC682)
10/67J|
34D32T7
B601
three phase sinus
diode wj
56 bp
DIODE BP
DDB6U110N
pr75
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SML-310F
Abstract: SML010BAT SML011BBT SML011EBT SML012BCT SML012ECT SML310BAT SML311EBT SML312BCT SML312ECT
Text: Wj-LED Lamps Surface Mount LED Lamps •Characteristics P ackage Part No. m m High brightness ■v.,.- blue/green chip 1.6X0.8(t=0.8) LEDs # 3.0x2.0(t=1.3) Em itting co ior SML310BAT SMA311BBT SML311EBT SML312BCT SML312ECT SML010BAT SML011BBT SML011EBT
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SML310BAT
SMA311BBT
SML311EBT
SML-010VT
SML-010DT
SML-010YT
SML-010MT
SML-01
SML-A10MT
SML-310F
SML010BAT
SML011BBT
SML011EBT
SML012BCT
SML012ECT
SML312BCT
SML312ECT
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WJ-A35
Abstract: No abstract text available
Text: WJ-A35 / SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO + 20 VOLTS Outline Drawings A35 Specifications* Characteristics 0.200 (5.08) Guaranteed Typical
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WJ-A35
SMA35
50-ohm
0D07D42
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WJ-CA70
Abstract: No abstract text available
Text: WJ-A701SMA70 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ VERY LOW NOISE: 1.8 dB TYP. ♦ HIGH EFFICIENCY: +8.5 dBm (TYP.) OUTPUT POWER @ 10 mA (TYP.) Outline Drawings Specifications* Characteristics A70 Typical 0.450 D (11.41)U
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WJ-A701SMA70
DIMENSION01
WJ-CA70
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Untitled
Abstract: No abstract text available
Text: WJ-RA62/SMRA62 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.5-6.2 GHz TYP. MEDIUM GAIN: 16.0 dB (TYP.) MEDIUM OUTPUT POWER: +13.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) Outline Drawings
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WJ-RA62/SMRA62
50-ohm
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SMA38
Abstract: transistor DB 42A WJ-A38
Text: WJ-A38 / SMA38 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +19 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10-2000 MHz Outline Drawings Specifications * A38 Typical Characteristics
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WJ-A38
SMA38
SMA38
transistor DB 42A
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Untitled
Abstract: No abstract text available
Text: TUS bftttVttt 6 UWNJ&Ü5H». > co p trch t - RELEASE» F M WJôUôÀTiôW— BY TYCO ELECTRONC5 CORPOUCTON. REVISIONS ~ ALL ROUTS RESERVED. M A MECHANICAL: 22 - KSCNPTO N— REV PER ECO—08—021533 8SEP2008 VL TX MATERIALS:
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8SEP2008
30ulNCH
1/16W
31MMBOOO
MAG45
7G05P1
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WJ-A33
Abstract: No abstract text available
Text: WJ-A33-1 /SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications* A 3 3 -1 0.200 [5.08) Guaranteed Typical Characteristics
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WJ-A33-1
/SMA33-1
50-ohm
J-A33-1
000703b
WJ-A33
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WJ-CA45-1
Abstract: WJ-CA45 wja45 wj-a45
Text: WJ-A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Outline Drawings A 45-1 Specifications" Characteristics 0.200 (5.08) Guaranteed
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WJ-A45-1
SMA45-1
WJ-CA45-1
WJ-CA45
wja45
wj-a45
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WJ-A41
Abstract: SMA41
Text: WJ-A41 / SMA41 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-4 GHz MEDIUM OUTPUT LEVEL: +12 dBm TYP. LOW NOISE: 4.0 dB (TYP.) GaAs FET DESIGN Outline Drawings A41 Specifications5* 0.200 (5.08) Typical
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WJ-A41
SMA41
50-ohm
00070tj2
SMA41
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Untitled
Abstract: No abstract text available
Text: WJ-RA26/SMRA26 10 to 1500 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -THREE STAGES:27.5 dB TYP. MEDIUM OUTPUT LEVEL: +14.5 dBm (TYP.) HIGH THIRD-ORDER I.P.: +27 dBm (TYP.) HIGH REVERSE ISOLATION: >40 dB (TYP.)
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WJ-RA26/SMRA26
50-ohm
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Untitled
Abstract: No abstract text available
Text: WJ-PA2/ SMPA2 10 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +25 dBm TYP. HIGH EFFICIENCY WIDE POWER SUPPLY RANGE: +5 TO +24 VOLTS +24 V O utline D raw ings PA2 Specifications * 0.200 (5.08) Guaranteed
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0721ci
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TRANSISTOR C 5387
Abstract: No abstract text available
Text: WJ-LA45-1 / SMLA45-1 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION Outline Drawings LA45-1 . o«„ ♦ HIGH OUTPUT LEVEL: +17 dBm TYP. ♦ MEDIUM GAIN: 14.0 dB (TYP.)
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WJ-LA45-1
SMLA45-1
LA45-1
0D0731D
TRANSISTOR C 5387
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Untitled
Abstract: No abstract text available
Text: WJ-EA54-3 5 to 300 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ LOW NOISE: 2.7 dB TYP. VERY HIGH GAIN: 36.5 dB (TYP.) LOW COST VERY SMALL SIZE: TO-5 PACKAGE Outline Drawings Specifications* EA54-3 Guaranteed Typical Characteristics .360 ± 002 • {19.141.05)'
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WJ-EA54-3
50-ohm
EA54-3
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