WJ AH1 Search Results

Contextual Info: AH103A The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long

AH103

Abstract: AH103-PCB1750 AH103-PCB1900 AH103-PCB2140 AH103-PCB900 JESD22-A114 NJM78L05 134.2 kHz RFID
Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long

Contextual Info: AH103A The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long

Driver amplifier SOT-89

Abstract: MARKING AH1A pha1
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long

Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long

Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long

PHA-1

Abstract: BLK-18 DF782 N5242A ZX85-12G-S AH1A MMIC "86 plastic package" marking TB-545-1 pl-313 SOT 89 PHA-1
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

PHA-1

Abstract: wj ah1 AH1A TB313
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

cx 1213 circuit diagram

Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of

pl-313

Abstract: PHA-1
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

PHA-1

Abstract: N5242A TB-545-1 PHA1 marking 25 mmic sot-89 ZX85-12G MMIC "SOT 89" marking BLK-18 PHA1 MARKING ZX85-12G-S
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

PHA-1

Abstract: SOT 89 PHA-1 Broadband Amplifiers Application Notes wj ah1
Contextual Info: New Product Announcement! Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz Click here for data sheet The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b

Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

AH101

Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
Contextual Info: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: c 596 AG101 AH11 AH22 AH1-1
Contextual Info: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

AH11a

Abstract: DL1020 PHA-11 broadband microwave push-pull amplifier
Contextual Info: New Product Announcement! Dual Matched MMIC Amplifier 50Ω PHA-11+ 0.05 to 3 GHz Click here for data sheet The Big Deal CASE STYLE: DL1020 • Dual matched amplifier for push-pull & balanced amplifiers Pricing: $7.95 QTY 10 • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b

AH101

Abstract: GaAs MESFET amplifier ideal amplifier UMTS AG101 AH102 47DBM 1-800-WJ1-4401
Contextual Info: Higher Power P1dB up to 1/2 Watt Low Cost High OIP3 +32 dBm Excellent Linearity OIP3 up to +45 dBm WJ introduces new amplifiers to our existing reliable MESFET GaAs product line. AH101 The combination of P1dB of 1/2 watt and excellent linearity up to +47 dBm OIP3, makes the new AH101 an ideal amplifier for next

WJ Communications, AH1

Abstract: ah1 fet mmic ah1 linear MTBF WJ 59
Contextual Info: The Communications Edge TM Application Note Product Information AH1 Temperature Effects on Reliability AH2 and AH3 Included by Similarity The AH1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s product for more than 15 years. Extensive life testing and field history of our GaAs products have demonstrated

AG101

Contextual Info: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: AG101 power amplifier mmic
Contextual Info: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

Contextual Info: Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-11+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT

AH11a

Abstract: PHA-11 TB-566-50-11 E8527D N5242A DL1020 m129556 TB-566-50
Contextual Info: Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-11+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range High IP3 and Low NF for use in 50 and 75 ohm applications. Exceptionally high IP2 has been demonstrated in wideband 50 and 75 ohm amplifiers evaluation boards. Combining