WJ TRANSISTOR Search Results

WJ transistor

Abstract: FP2189 THEORY FP1189 FP31QF two transistors matched transistors
Contextual Info: Application Note The Communications Edge TM Active-Bias Constant-Current Source Recommended for WJ HFET devices An optional active-bias current mirror is recommended for use with the application circuits shown in WJ’s FP1189 and FP2189 datasheets. All WJ HFET’s require a negative gate voltage with a positive drain voltage.

Contextual Info: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings

Contextual Info: WJ-A65 / SMA65 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +10 dBm TYP. ♦ MEDIUM THIRD ORDER I.P.: +24 dBm (TYP.) Outline Drawings A65 Specifications’* 0.200 (5.08) Guaranteed Typical Characteristics

lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR 60Ghz TRANSISTOR 30GHZ 30GHZ
Contextual Info: IEEE BCTM 10.1 A Comprehensive Bipolar Avalanche Multiplication Compact Model for Circuit Simulation WJ. Kloosterman, J.C.J. Paasschens, and R.J. Havens Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 2744093, email: Willy.Kloosterman@philips.com

CA-180

Abstract: WJ-CA18
Contextual Info: WJ-A18Q/SMA180 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH REVERSE ISOLATION: 22 dB TYP. ♦ HIGH OUTPUT POWER: +18 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.) Small Signal Gain (Min.)

AP603

Abstract: transistor 6c x 4401 transistor
Contextual Info: Application Note AP603 2015 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

AP602

Abstract: WJ 58 transistor WJ 60 transistor
Contextual Info: Application Note AP602 880 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

WJ-CA61

Contextual Info: WJ-A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* 0.200 (5.03) Characteristics Guaranteed

WJ-A88

Contextual Info: WJ-A88 / SMA88 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.7 dB TYP. HIGH OUTPUT POWER: +20.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.)

Contextual Info: WJ-A11 /SMA11 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.1 dB TYP. LOW VSWR: 1.3:1 (TYP.) FLAT BANDWIDTH: < ±0.25 dB (TYP.) Outline Drawings Specifications* A11 Characteristics 0.450 D (11.41) Guaranteed

csc2003

Abstract: CSC2003M CSC2002M CSC2003K CSC2003L CSC2120 CSC2120Y CSC2216 CSC2229Y CSC2240
Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. CSC2002M Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO ^EBO (V) (V) (V) Po (WJ Min Min Min @Tc=25°a 60 60 5 0.5 *CBO (A) 0.3 Vc *CES ^CE (pA) (V) (pA) 8 (V)

WJ 60 transistor

Abstract: WJ transistor AP601 power amplifier s band ghz mhz AP601-PCB880
Contextual Info: Application Note AP601 880 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

AP602

Contextual Info: Application Note AP602 2010 - 2025MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

AP601

Contextual Info: Application Note AP601 900 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

WJ-A35

Contextual Info: WJ-A35 / SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO + 20 VOLTS Outline Drawings A35 Specifications* Characteristics 0.200 (5.08) Guaranteed Typical

WJ-CA70

Contextual Info: WJ-A701SMA70 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ VERY LOW NOISE: 1.8 dB TYP. ♦ HIGH EFFICIENCY: +8.5 dBm (TYP.) OUTPUT POWER @ 10 mA (TYP.) Outline Drawings Specifications* Characteristics A70 Typical 0.450 D (11.41)U

131-6 wj

Abstract: 131-6 wj 64 131-6 wj 60 AP603 WJ 60 transistor
Contextual Info: Application Note AP603 2140 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

WJ 58 transistor

Abstract: AP603
Contextual Info: Application Note AP603 940 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

unconditionally stable transistor high gain 2.4 ghz

Abstract: PCB2020 capacitor 22PF AP601 TRANSISTOR 2025 transistor 2015 20-25MHZ power amplifier s band ghz mhz
Contextual Info: Application Note AP601 2015 - 2025 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

WJ-A57

Abstract: WJ-CA57 WJA57
Contextual Info: WJ-A57 / SMA57 ¡•sii 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +14 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +28.0 dBm (TYP.) Outline Drawings A57 Specifications* 0.200 (5.08) Typical Characteristics Guaranteed

WJ-A26

Contextual Info: WJ-A26 / SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A26 0.200 (5-08) Specifications51 Guaranteed

transistor 45 f 123

Abstract: si3300
Contextual Info: WJ-A43 / SMA43 100 to 3200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 100-3200 MHz EXCELLENT GAIN BLOCK: 11.5 dB TYP. MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) Outline Drawings A43 Specifications* 0.450 D (11.41)°

AP601

Contextual Info: Application Note AP601 940 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the

WJ 60 transistor

Abstract: WJ transistor ap601 AP601-PCB1960
Contextual Info: Application Note AP601 1960 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the