WL SOT23 Search Results

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE S S U E 2 - FEBRUARY 1995 PIN CONFIGURATION 1 1 I WL PARTMARKING DETAIL FM M V3102-4C P 3 2 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Power Dissipation at T amlj=25°C P«ot Operating and Storage Temperature Range

Contextual Info: SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR FMMT451 a R s iiF i.n r r n R F R iM R FEATURES * Low equivalent on-resistance; Rce ^ , 400mQ at 1A * 1 Amp continuous current * Ptot= 500 mW COMPLEMENTARY TYPE PARTMARKING DETAIL- WL FMMT551 451 ABSOLUTE MAXIMUM RATINGS.

WL SOT23

Abstract: LAB SOT23 SOT23CSM
Contextual Info: Illl WL m m am SEME « • • h 'M M SMLA42CSM LAB SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches (0.02 ± 0.004) n 4 I * 3 FEATURES 3.05*0.13 (0.12*0.005) A - 1.02 ± 1.40 (0.056) max. 0.10

Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSU E 3 - JANUARY 1996 FEATURES * * High ÎT-900M H Z M in M axcapacitance=1pF * Low noise 4.5dB Wl A fe ', P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

SOT MARKING 213

Contextual Info: M C C SOT-23 P lastic -E n c ap su la te T ra n s is to rs ^ FM M T4124L T 1 TR A N SISTO R N PN 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES f&JMr dissipation Pcm: 0.33 W (Tamb=25'C) WL-Jxv, Collector current ICM: 0.2 A 2,4 CoHector*base voltage 1.3 V<br)cbo:30V

diode hp 2800

Abstract: hp 2800 diode HP 2804 diode hp 2835 schottky diode hp 2810 mark a7 sot23 DIODE HSMS-2820 marking code C9 HSMS-2800 HSMS-280X
Contextual Info: Thal H E W L E T T WL/iÆ P A C K A R D Surface M ount RF Schottky Barrier D iodes Technical Data HSMS-28XX S eries F eatu res Package Lead Code Id en tification • S urface M ount SOT-23/SOT143 Package • Low Turn-On V oltage A s Low as 0.34 V a t 1 mA

LM7805 TO252

Abstract: lm7805 sot23 lm7805 so8 S14K275 ATAVRMC200 atmel 1206 WL sot23 IRAMS10UP60A 1uF-275Vac 220uF-35V
Contextual Info: 5 4 3 2 VDC POWER SUPPLY R99 220K 1206 2 + 3 RV1 S14K275 D C3 470uF-400Vdc 4 4 C2 1uF-275Vac TRAD_PAS_22_5 TP_KEYSTONE D1 SB104-280VCA BHC R98 220K 1206 2 CARRY_FUSIBLE_5X20mm 6.3A-250VAC C1 1uF-275Vac TRAD_PAS_22_5 7 3 2 1 1 9 PH N T L1 1mH-250VAC SELF_WURTH_WE-CMB

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

marking codes fairchild

Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O

marking CODE W2D

Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

Wafer Fab Plant Codes ST

Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

V = Device Code

Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Contextual Info: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

wz 74 marking

Abstract: t138a V = Device Code
Contextual Info: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

marking t132

Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

vsop8 package outline

Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
Contextual Info: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

H2D MARKING CODE

Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

diode smd bcf

Abstract: MCP402X s101 6pin 10f206 s300 main board s-1311 S301 cap smd diode code s110 s101 6-pin
Contextual Info: MCP402X Digital Potentiometer Evaluation Board User’s Guide 2005 Microchip Technology Inc. DS51546A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PC 74 HCT 32 P

Abstract: U-046 V = Device Code
Contextual Info: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low