WL4 SMD MARKING Search Results
WL4 SMD MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLM15PX601BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 600ohm POWRTRN |
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| BLE32SN120SH1L | Murata Manufacturing Co Ltd | FB SMD 1210inch 12ohm POWRTRN |
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| BLM21HE601BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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| BLM15PX471BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 470ohm POWRTRN |
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| BLM15PX601SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 600ohm POWRTRN |
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WL4 SMD MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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UT22VP10Contextual Info: Standard Products UT22VP10 Universal RADPALTM Data Sheet November 2000 FEATURES q High speed Universal RADPAL - tPD: 15.5ns, 20ns, 25ns maximum - fMAX1: 33MHz maximum external frequency - Supported by industry-standard programmer Amorphous silicon anti-fuse |
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UT22VP10 33MHz MIL-STD-883, 24-pin 100-mil 24-lead 28-lead | |
radpal
Abstract: TRANSISTOR SMD MARKING CODE WL4 TRANSISTOR SMD MARKING CODE t15 TRANSISTOR SMD MARKING E0 transistor SMD t15 DF marking code smd transistor DATASHEET smd fuse marking 20 SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE oc TRANSISTOR SMD MARKING CODE SP
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UT22VP10 33MHz MIL-STD-883, 24-pin 100-mil 24-lead 28-lead radpal TRANSISTOR SMD MARKING CODE WL4 TRANSISTOR SMD MARKING CODE t15 TRANSISTOR SMD MARKING E0 transistor SMD t15 DF marking code smd transistor DATASHEET smd fuse marking 20 SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE oc TRANSISTOR SMD MARKING CODE SP | |
smd WTs 35Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 3117800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 ‘C operating temperature • Performance: -50 -60 -70 ÍRAC RAS access time 50 60 70 ns 13 15 20 ns ¡CAO CAS access time |
OCR Scan |
3117800BSJ P-SOJ-28-3 smd WTs 35 | |
UT22VP10Contextual Info: Standard Products UT22VP10 Universal RADPALTM Data Sheet Feb. 1999 FEATURES q High speed Universal RADPAL - tPD: 15.5ns, 20ns, 25ns maximum - fMAX1: 33MHz maximum external frequency - Supported by industry-standard programmer Amorphous silicon anti-fuse q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 |
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UT22VP10 33MHz MIL-STD-883, 24-pin 100-mil 24-lead 28-lead | |
marking wl3Contextual Info: 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJ-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJL-50/-60/-70 • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • Low Power dissipation |
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16-Bit 314171BJ-50/-60/-70 16-Bit 314171BJL-50/-60/-70 HYB314171BJ/BJL-50/-60/-70 16-DRAM GPJ09018 marking wl3 | |
smd code marking wl5
Abstract: Q67100-Q1188 BST60
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HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 smd code marking wl5 Q67100-Q1188 BST60 | |
Q67100-Q1192
Abstract: WL3 MARKING BST60
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HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 Q67100-Q1192 WL3 MARKING BST60 | |
HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
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HYB3117805BSJ HYB3117805BSJ-50/-60/-70 P-SOJ-28-3 400mil) 81max GPJ05699 Q67100-Q1151 Q67100-Q1152 | |
Q67100-Q1072
Abstract: Q67100-Q1073
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16-Bit HYB5118160BSJ-50/-60/-70 5118160BSJ-50/-60/-70 16-DRAM P-SOJ-42 GPJ05853 Q67100-Q1072 Q67100-Q1073 | |
hyb514
Abstract: 514400 Q67100-Q973 HYB514400B
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HYB514400BJ/BJL P-SOJ-26/20 GPJ05626 hyb514 514400 Q67100-Q973 HYB514400B | |
Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
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HYB5117805BSJ HYB5117805BSJ-50/-60/-70 P-SOJ-28-3 400mil) 81max GPJ05699 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 | |
5118160
Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
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16-Bit HYB5118160BSJ-50/-60/-70 5118160BSJ-50/-60/-70 16-DRAM P-SOJ-42 GPJ05853 5118160 Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50 | |
HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
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HYB3117805BSJ HYB3117805BSJ-50/-60/-70 P-SOJ-28-3 400mil) 81max GPJ05699 Q67100-Q1151 Q67100-Q1152 | |
EDO DRAM
Abstract: Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 smd code marking wl5
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HYB5117805BSJ HYB5117805BSJ-50/-60/-70 P-SOJ-28-3 400mil) 81max GPJ05699 EDO DRAM Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 smd code marking wl5 | |
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Q67100-Q1147
Abstract: Q67100-Q1148 WL10
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HYB3117800BSJ-50/-60/-70 3117800BSJ-50/-60/-70 P-SOJ-28-3 81max GPJ05699 Q67100-Q1147 Q67100-Q1148 WL10 | |
1MX4
Abstract: HYB314400BJ/BJL-50/-60/-70
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HYB314400BJ/BJL-50/-60/-70 P-SOJ-26/20 GPJ05626 1MX4 HYB314400BJ/BJL-50/-60/-70 | |
5117400
Abstract: fast page mode dram controller HYB5117400BJ HYB5117400BT
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HYB5117400BJ HYB5117400BT 5117400BJ/BT-50/-60/-70 P-SOJ-26/24 GPJ05628 GPX05857 5117400 fast page mode dram controller | |
HYB5117400BJ
Abstract: HYB5117400BT hyb5117400
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HYB5117400BJ HYB5117400BT 5117400BJ/BT-50/-60/-70 P-SOJ-26/24 GPJ05628 GPX05857 hyb5117400 | |
5116 ram
Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
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16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70 | |
HYB5116400BJ
Abstract: HYB5116400BT
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HYB5116400BJ HYB5116400BT 5116400BJ/BT-50/-60/-70 P-SOJ-26/24 GPJ05628 GPX05857 | |
5116 ram
Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
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16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70 | |
5117405
Abstract: smd code Wl3 5117405BJ-60
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HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB53 HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) 5117405 smd code Wl3 5117405BJ-60 | |
5117405Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature |
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HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) GPX05857 5117405 | |
bt 330
Abstract: HYB3116405 HYB3117405 HYB3117405BJ 4Mx4 DRAM
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HYB3116405BJ/BT HYB3117405BJ/BT HYB3117405BJ/BT-50) HYB3117405BJ/BT-60) HYB3117405BJ/BT-70) 405BJ/BT P-SOJ-26/24-1 GPJ05628 GPX05857 bt 330 HYB3116405 HYB3117405 HYB3117405BJ 4Mx4 DRAM | |