X BAND HIGH POWER AMPLIFIER Search Results

CPI Helix tube

Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
Contextual Info: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for

solid state amplifier

Abstract: operation of class c amplifier
Contextual Info: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C

X-band amplifier

Abstract: CHA7115 x-band power transistor x-Band High Power Amplifier
Contextual Info: CHA7115 X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at

cha7215

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power

CHA8100

Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
Contextual Info: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power

x-Band High Power Amplifier

Abstract: x-band HPA 3 W CHA8100 CHA8100-99F TO9 thermal resistance
Contextual Info: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power

CHA7115

Abstract: x-Band High Power Amplifier 39dBm x-band power amplifier
Contextual Info: CHA7115 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at

Contextual Info: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power

x-Band High Power Amplifier

Abstract: CHA7215
Contextual Info: CHA7215 X-band High Power Amplifier GaAs Monolithic Microwave IC Vg3 Description Vd3 Vd2 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at

Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS

Contextual Info: CHA7115-99F RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at

CHA7010

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

x-Band High Power Amplifier

Abstract: 10Ghz RF Power 10w amplifier CHA7010
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

Contextual Info: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

Contextual Info: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R 1 1 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficiency at

FMA3015

Contextual Info: FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 15dB Gain 5W Saturated Output Power at 9V pHEMT Technology VD GENERAL DESCRIPTION RF Input The FMA3015 is a high performance X-Band

MIL-STD-1686

Contextual Info: FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 12dB Gain 7.5W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3015 is a high performance X-Band

SSPA

Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while

FMA3012

Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
Contextual Info: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band

x-Band High Power Amplifier

Abstract: CHA7012
Contextual Info: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

x-Band High Power Amplifier

Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA7010

Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

X-band Gan Hemt

Abstract: FMA3015 MIL-HDBK-263 9-GHz
Contextual Info: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare