X BAND PULSED AMPLIFIER RADAR Search Results

X-band radar module

Abstract: MAAP-009748-000000
Contextual Info: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs

MS2601

Abstract: radar amplifier s-band
Contextual Info: MS2601 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 x 400 2NL FLG DESCRIPTION: 1 The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. 2 4 3 FEATURES INCLUDE: • Input/Output Matching • Gold Metallization

ASI2223-20

Abstract: ASI10533
Contextual Info: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks

Contextual Info: MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features •        12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested

Contextual Info: MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Rev. V1 Features •        12 W X-Band Power Amplifier 36 dB Small Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested

SSPA C Band

Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier • Aethercomm Part Number SSPA 1.20-1.40-100 is a Minimum output power = 100 Watts @ 85C base plate high power, pulsed solid state amplifier used for milit ary telemetry, data transmission and radar. This SSPA

C band Radar Transponder

Abstract: IFF Radar Transponder x band radar transmitters Aethercomm high power microwave transmitter SSPA C Band 1030 mhz DPSK 1030 PULSED
Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.00-1.10-100 is a high power, • Minimum output power = 18 dBw pulsed, secondary surveillance radar, amplifier that • Pulse droop < 0.05 dB for a 32 uSec pulse

x band pulsed amplifier radar

Abstract: pulse compression radar x band radar transmitters
Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.2-1.4-200 is a high power, solid state RF amplifier SSPA for use in military RADAR systems. It offers greater than 43 dB of gain from 1.2 GHz to 1.4 GHz. It has a

x band radar transmitters

Abstract: x band pulsed amplifier radar SSPA C Band 15 GHz high power amplifier
Contextual Info: Solid State Pulsed Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.2-1.4-200 is a high power, • 200 watts minimum output power solid state RF amplifier SSPA for use in military • 40% efficiency minimum RADAR systems.

Contextual Info: Microwave Power Modules Microwave Power Modules product summary .the power in microwaves! MPMS Microwave Power Modules For Radar, EW and Communications/Datalinks Applications “Perfectly Packaged Power” aptly describes TMD’s MPMs, our newest and neatest range of rugged

Contextual Info: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and

solid state amplifier

Abstract: 300 MHZ LNA RF power amplifier MHz
Contextual Info: Solid State Low Noise Amplifier Low Noise UHF Band Solid State Amplifier Aethercomm P/N LNA 0.28-0.30-2.0 is a low noise • Noise figure is 1.8 dB typical solid state amplifier for use in the USMC TPN22 • Nominal gain is 50 dB Radar. This is a direct replacement for the original

SSPA

Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.08-1.10-10 is a high power, • Minimum output power = 40 Watts 40 watt pulsed, L band SSPA used in Secondary • Pulse droop < 0.05 dB for a 1 uSec pulse

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

sspa transmitter x band

Contextual Info: WaveFront W Front The QuinStar Newsletter Spring 2014 Twenty First Anniversary Issue Message from the CEO/President Greetings reetings and thanks from the QuinStar family on the occasion of our 21st Anniversary celebration! This special issue of WaveFront

AMPLIFIER 1500w

Abstract: transformer rectifier unit x band pulsed amplifier radar RF connector high power rf 10kW 1500w power supply Radar x band radar 3 phase monitor 3-phase monitor
Contextual Info: Travelling Wave Tube Amplifier Type LY72 Description The LY72 is a travelling wave tube amplifier comprising an Albacom LY73 pulsed E-F Band travelling wave tube and matched, modular power supply. The TWTA produces a 10kW peak output power at up to 2.6% duty ratio, and operates from a 200 Volt, 3 phase, 400 Hz

TWTA

Abstract: AHPA-10-2000 radar circuit modulator x band radar 62GB-57A LY132 x band pulsed amplifier radar RF connector Amphenol HV 62GB
Contextual Info: Travelling Wave Tube Amplifier Type AHPA-10-2000 Description The AHPA-10-2000 is a travelling wave tube amplifier comprising of an Albacom LY132 pulsed I band travelling wave tube and matched, modular power supply. The TWTA produces 2.0kW peak output power at up to 2% duty ratio, and operates from a 24 to 32

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

8002 amplifier

Abstract: SSB Modulator application note Wideband FM Modulator SSB Modulator IQ vector generator MHZ SSB Modulator DESIGN Chirp x band radar x band pulsed amplifier radar waveform generator specifications
Contextual Info: Application Note Generating frequency chirp signals to test radar systems Radar chirp signals can be simulated by the 3410 series signal generator using the internal arbitrary waveform generators, external IQ inputs or wideband FM/pulse capability. For the very latest specifications visit

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

GROUND BASED RADAR

Abstract: AIRBORNE DME vimostm
Contextual Info: Thermal Characteristics & Considerations VIMOS Product Portfolio VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a useful reference to aid in thermal considerations and calculations, applied to the VIMOSTM portfolio of RF power transistors. Rather

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

RX1214B

Abstract: erie 1250-003
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor RX1214B170W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor narrowband amplifier.